Abstract: The present invention relates to a method for preventing transmission of influenza, wherein said method comprises administering an effective amount of a compound to a patient having an influenza virus infection, herein referred to as “index patient”, wherein the compound has one of the formulae (I) and (II), or its pharmaceutically acceptable salt. The compound to be used in the present invention reduces infectivity of the influenza virus of the index patient, and therefore, reduces the risk of the index patient to trigger an influenza epidemic or an influenza pandemic as compared to a control patient.

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes a first device layer to an n-th (n is a natural number of 2 or more) device layer, each of which includes a first barrier insulating film, a second barrier insulating film, a third barrier insulating film, an oxide semiconductor device, a first conductor, and a second conductor.

Abstract: A method for treating influenza is described. The disclosed method generally involves administering an effective amount of a compound, for example baloxavir marboxil, to a subject having influenza, where the compound is administered initially at least about 48 hours after an onset of influenza. Generally, the effective amount is sufficient to alleviate a symptom of influenza in the subject as compared to a symptom that the subject has when the compound is first administered to the subject.

Abstract: Appropriately perform solid-liquid separation. A separation device (1) includes a casing (10), a screw shaft (12), a first screw blade (14), and a second screw blade (16). At least one of the first screw blade (14) and the second screw blade (16) has an opening that penetrates from one surface to another surface, designed based on the outflow of separated liquid (C) and solids from the screw blade.

Abstract: A replacing and holding device includes an electrode tip puller including two stacked pick plates inserted between an end face of an electrode tip fitted into a shank fixed to a gun arm of a welding gun and an end face of a larger diameter portion of the shank, a guide rod that guides motions of the pick plates in a stacked direction thereof, a pick plate interspace increasing mechanism that increases a space between the pick plates according to positions of the pick plates along the guide rod, an electrode tip holder in one of the pick plates to hold the electrode tip pulled out from the shank, and an electrode tip contact portion in front of the shank in an insert direction of the shank, wherein the electrode tip comes into contact by a motion of the welding gun to insert the shank into the electrode tip.

Abstract: A semiconductor device that is suitable for high integration is provided. A first layer provided with a first transistor including an oxide semiconductor, over a substrate; a second layer over the first layer; a third layer provided with a second transistor including an oxide semiconductor, over the second layer; a fourth layer between the first layer and the second layer; and a fifth layer between the second layer and the third layer are included. The total internal stress of the first layer and the total internal stress of the third layer act in a first direction, the total internal stress of the second layer acts in the direction opposite to the first direction, and the fourth layer and the fifth layer each include a film having a barrier property.

Abstract: The present invention relates to a method for preventing transmission of influenza, wherein said method comprises administering an effective amount of a compound to a patient having an influenza virus infection, herein referred to as “index patient”, wherein the compound has one of the formulae (I) and (II), or its pharmaceutically acceptable salt. The compound to be used in the present invention reduces infectivity of the influenza virus of the index patient, and therefore, reduces the risk of the index patient to trigger an influenza epidemic or an influenza pandemic as compared to a control patient.

Abstract: A semiconductor device with little characteristic variation is provided. A transistor includes an oxide semiconductor; a first conductor and a second conductor over the oxide semiconductor; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator that is positioned over the first insulator and the second insulator and provided with a first opening overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned over the oxide semiconductor and between the first conductor and the second conductor; and a third conductor over the fourth insulator. A capacitor includes the second conductor; the third insulator provided with a second opening reaching the second conductor; a fifth insulator positioned inside the second opening; and a fourth conductor over the fifth insulator. A plug is positioned to penetrate the first insulator, the third insulator, the first conductor, and the oxide semiconductor.

Abstract: The threaded joint includes a pin and a box. The pin includes a taper male thread part, and the box includes a taper female thread part to be engaged with the taper male thread part. The male thread part is divided into a first region on the free end side of the pin, and a second region on the tubular side of the pin along a tube axis direction. The taper ratio of the first region is greater than the taper ratio of the second region. The taper ratio of the first region is greater than the taper ratio of the female thread part. The taper ratio of the second region is equal to or greater than the taper ratio of the female thread part.

Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

Abstract: A screw-type separation device 1 includes a casing 10 including an object discharging port and discharging an object A having been dehydrated, and a separated liquid discharging port; a screw shaft provided inside the casing and extending in an extending direction that is a direction from the one end part to the other end part; a first screw blade extending spirally on an outer peripheral surface of the screw shaft; and a second screw blade extending spirally on the outer peripheral surface of the screw shaft such that a predetermined gap is formed with respect to the first screw blade in the extending direction. A groove is formed on an inner peripheral surface of the casing.

Abstract: The present invention relates to a method for preventing transmission of influenza, wherein said method comprises administering an effective amount of a compound to a patient having an influenza virus infection, herein referred to as “index patient”, wherein the compound has one of the formulae (I) and (II), or its pharmaceutically acceptable salt. The compound to be used in the present invention reduces infectivity of the influenza virus of the index patient, and therefore, reduces the risk of the index patient to trigger an influenza epidemic or an influenza pandemic as compared to a control patient.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor to a fourth conductor, a first insulator and a second insulator, and a first oxide and a second oxide are included, the first insulator is positioned over the first conductor, the first oxide is positioned over the first insulator, a first opening that reaches the first conductor is provided in the first insulator and the first oxide, the second conductor and the third conductor isolated from each other are positioned over the first oxide, at least part of the third conductor overlaps with the first opening and is in contact with a top surface of the first conductor, the second oxide is positioned over the first oxide so as to at least partly overlap with a region between the second conductor and the third conductor, the second insulator is positioned over the second oxide, and the fourth conductor is positioned over the second insulator.

Abstract: A method for treating influenza is described. The disclosed method generally involves administering an effective amount of a compound, for example baloxavir marboxil, to a subject having influenza, where the compound is administered initially at least about 48 hours after an onset of influenza. Generally, the effective amount is sufficient to alleviate a symptom of influenza in the subject as compared to a symptom that the subject has when the compound is first administered to the subject.

Abstract: A high-performance semiconductor device is provided. The semiconductor device includes a transistor, an insulating film over the transistor, an electrode, and a metal oxide over the insulating film. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide over the first gate insulating film, a source electrode and a drain electrode electrically connected to the oxide, a second gate insulating film over the oxide, and a second gate electrode over the second gate insulating film. The electrode includes a region in contact with the insulating film. The first gate insulating film is in contact with the insulating film. The thicknesses of the insulating film over the second gate electrode, the insulating film over the source electrode, and the insulating film over the drain electrode are substantially the same, and the insulating film includes excess oxygen.

Abstract: Provided is a vehicle in which an internal combustion engine can be suitably assisted by a rotating electrical machine. The vehicle is provided with an internal combustion engine, a rotating electrical machine, a transmission, a clutch placed between the transmission and the combination of the internal combustion engine and rotating electrical machine, and a motive power control device that controls the motive power of the internal combustion engine and the rotating electrical machine. The motive power control device calculates additional motive power for the rotating electrical machine on the basis of the difference between the motive-power-transmitting capacity of the clutch and the motive power of the internal combustion engine.

Abstract: The threaded joint includes a pin and a box. The pin includes a taper male thread part, and the box includes a taper female thread part to be engaged with the taper male thread part. The male thread part is divided into a first region on the free end side of the pin, and a second region on the tubular side of the pin along a tube axis direction. The taper ratio of the first region is greater than the taper ratio of the second region. The taper ratio of the first region is greater than the taper ratio of the female thread part. The taper ratio of the second region is equal to or greater than the taper ratio of the female thread part.

Abstract: The present invention relates to a method for preventing transmission of influenza, wherein said method comprises administering an effective amount of a compound to a patient having an influenza virus infection, herein referred to as “index patient”, wherein the compound has one of the formulae (I) and (II), or its pharmaceutically acceptable salt. The compound to be used in the present invention reduces infectivity of the influenza virus of the index patient, and therefore, reduces the risk of the index patient to trigger an influenza epidemic or an influenza pandemic as compared to a control patient.

Abstract: A high-performance semiconductor device is provided. The semiconductor device includes a transistor, an insulating film over the transistor, an electrode, and a metal oxide over the insulating film. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide over the first gate insulating film, a source electrode and a drain electrode electrically connected to the oxide, a second gate insulating film over the oxide, and a second gate electrode over the second gate insulating film. The electrode includes a region in contact with the insulating film. The first gate insulating film is in contact with the insulating film. The thicknesses of the insulating film over the second gate electrode, the insulating film over the source electrode, and the insulating film over the drain electrode are substantially the same, and the insulating film includes excess oxygen.