Abstract: A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.

Abstract: Provided is a suction device that can suppress sound and vibration during use. A suction device includes a flow-passage forming section (1) having a suction port (20) from which fluid is sucked, a discharge port (29) from which the fluid is discharged, and a flow passage (2) which is sealed from an outside except at the suction port (20) and the discharge port (29) and through which the fluid flows, and a piezoelectric driving part (33) that generates a flow of the fluid in the flow passage (2). The piezoelectric driving part (33) includes a diaphragm (37) and a piezoelectric element (34) as a moving part that transmits driving force to the fluid. The moving part is entirely disposed inside the flow passage (2).

Abstract: Provided is a vehicle in which an internal combustion engine can be suitably assisted by a rotating electrical machine. The vehicle is provided with an internal combustion engine, a rotating electrical machine, a transmission, a clutch placed between the transmission and the combination of the internal combustion engine and rotating electrical machine, and a motive power control device that controls the motive power of the internal combustion engine and the rotating electrical machine. The motive power control device calculates additional motive power for the rotating electrical machine on the basis of the difference between the motive-power-transmitting capacity of the clutch and the motive power of the internal combustion engine.

Abstract: A power control device of a vehicle disallows generation of additional power of rotating electrical machines when power of an internal combustion engine is transmitted to a transmission via a clutch and an amount of operation of an accelerator pedal is lower than an operation threshold value. The power control device allows generation of additional power of the rotating electrical machines when power of the internal combustion engine is transmitted to the transmission via the clutch and the amount of operation of an accelerator pedal is higher than the operation threshold value.

Abstract: In a vehicle, a first rotating electrical machine, is connected to first wheels via a clutch, and second rotating electrical machines are connected to second wheels or the first wheels without going through the clutch. A power control device allocates electric power to the second rotating electrical machines with higher priority over the first rotating electrical machine when adding additional power to power of an internal combustion engine, thereby generating power of the second rotating electrical machines with higher priority over power of the first rotating electrical machine.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

Abstract: Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: In a vehicle, a first rotating electrical machine, is connected to first wheels via a clutch, and second rotating electrical machines are connected to second wheels or the first wheels without going through the clutch. A power control device allocates electric power to the second rotating electrical machines with higher priority over the first rotating electrical machine when adding additional power to power of an internal combustion engine, thereby generating power of the second rotating electrical machines with higher priority over power of the first rotating electrical machine.

Abstract: A power control device of a vehicle disallows generation of additional power of rotating electrical machines when power of an internal combustion engine is transmitted to a transmission via a clutch and an amount of operation of an accelerator pedal is lower than an operation threshold value. The power control device allows generation of additional power of the rotating electrical machines when power of the internal combustion engine is transmitted to the transmission via the clutch and the amount of operation of an accelerator pedal is higher than the operation threshold value.

Abstract: A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

Abstract: Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween.

Abstract: An image processing device includes storage unit, a communication portion and an image processing function control portion. The storage unit stores image data. The communication portion performs communication with a server and a portable terminal. The image processing function control portion causes the communication portion to transmit the image data stored in the storage unit to the server and causes the communication portion to transmit the image data to the portable terminal in response to failure of the transmission of the image data to the server by the communication portion.

Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

Abstract: Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween.

Abstract: A fault diagnostic system (1) of the present invention includes a first fault diagnostic device (3) and a second fault diagnostic device (5). The first fault diagnostic device (3) acquires the voltage value of a battery (2) in accordance with a synchronization signal, and sends the voltage value and the synchronization signal. The second fault diagnostic device (5) acquires the voltage value of an inverter (4) in accordance with the received synchronization signal, matches the acquisition timings of the voltage value of the battery (2) and the voltage value of the inverter (4) on the basis of the received synchronization signal, and performs a fault diagnosis by comparing these voltage values.