Abstract: An electroless plating pre-treatment solution is an aqueous solution in which at least one selected from the group consisting of sulfonic acid having two or more characteristic groups, derivatives of the sulfonic, and salts of the sulfonic acid is included.

Abstract: A plate and a substrate are placed to face each other and a treatment liquid is jetted from a treatment liquid jetting portion of the plate, thereby treating the substrate. At this time, bubbles in the treatment liquid are discharged from an opening formed in the plate, thereby enabling reduction in treatment nonuniformity caused by the bubbles. The formation of a slope toward the opening on the plate makes it possible to further promote the removal of the bubbles from the treatment liquid.

Abstract: A plating system comprises: a plating unit which plates a water; a plating solution storage tank which stores a plating solution; and a plating solution supply system which supplies the plating solution in the plating solution storage tank to the plating unit. A dissolved oxygen removing unit which removes dissolved oxygen from the plating solution flowing in the plating solution supply system is provided in the middle of the plating solution supply system.

Abstract: The object of the present invention is to provide a plating method capable of planarization process of high quality in comparison with the conventional plating method and also provide a plating device and a plating system adopting the plating method of the invention. In the plating method and device, an object 10 to be processed and an electrode plate 20 are dipped in a solution including objective metal ions and a forward current is supplied between the object and the electrode plate to educe a metal on the surface of the object. After forming a plating film on the object excessively, a backward current is supplied between the object 10 and the electrode 20 to uniformly remove at least part of superfluous plating film.

Abstract: A plating system comprises: a plating unit which plates a water; a plating solution storage tank which stores a plating solution; and a plating solution supply system which supplies the plating solution in the plating solution storage tank to the plating unit. A dissolved oxygen removing unit which removes dissolved oxygen from the plating solution flowing in the plating solution supply system is provided in the middle of the plating solution supply system.

Abstract: Quartz member such as a quartz tube for semiconductor manufacturing equipment capable of heat treating a substrate to be treated without causing contamination, a manufacturing method of such quartz member, thermal treatment equipment furnished with such quartz member, and an analysis method of metal in quartz member are provided. A quartz specimen is immersed in hydrofluoric acid to expose a layer to be analyzed located at a prescribed depth. On an exposed surface, a decomposition liquid such as hydrofluoric acid or nitric acid is dripped to decompose only an extremely thin layer to be analyzed, followed by recovering of the decomposition liquid. The decomposition liquid is quantitatively analyzed by use of atomic absorption spectroscopy (AAS) or the like to measure an amount of metal contained in the decomposition liquid. From a difference of thicknesses before and after the decomposition and an area of dripped decomposition liquid, a volume of a decomposed layer to be analyzed is obtained.

Abstract: A plating apparatus includes a plating solution tank which stores a plating solution, a holder including an inner space to house a wafer and an opening for the wafer to be in contact with the plating solution, and a nitrogen supplying mechanism to supply nitrogen to the inner space of the holder.

Abstract: A holder holding a wafer descends and the wafer comes in contact with a plating solution. In this state, the wafer is heated by a resistance heating element disposed in the holder so that the temperature of the wafer becomes gradually higher from its outer circumference to its center part. Then, voltage is applied between an anode electrode and the wafer to apply the plating on a face to be plated of the wafer.

Abstract: A film thickness measuring apparatus is provided with a housing which is made up of a base plate and outer cases, and which substantially shuts off the internal region thereof from the outside air, an introduction stage on which a cassette C is mounted, the cassette containing a plurality of substrates which have thin films formed thereon, a measurement stage which is arranged inside the housing and on which the substrate is placed for measuring the film thickness of the thin film, and a conveyance mechanism, arranged inside the housing, for moving the substrates between the inside of the cassette and the measurement stage. A film thickness measuring mechanism is arranged inside the housing. The film thickness measuring mechanism comprises a light emitting mechanism and a detector. The light emitting mechanism includes a laser light source for emitting a laser beam to the thin film on a wafer placed on the measurement stage. The detector detects light reflected from the thin film.

Abstract: Providing liquid treatment equipment capable of largely reducing a frequency of discarding a treatment solution as a whole and capable of implementing smooth and high quality liquid treatment with less manufacturing burden. Equipment comprises a treatment solution bath capable of accommodating a treatment solution for implementing liquid treatment to a substrate to treat, a treatment solution circulating system circulating the accommodated treatment solution between the outside of the treatment solution bath, and a product removal unit removing a reaction product due to the liquid treatment contained in the circulated treatment solution. By circulating the accommodated treatment solution between the outside of the treatment solution bath, reaction products contained in the circulated treatment solution are removed by means of the product removal unit.