Abstract: Disclosed is a capacitor which has a high capacitance and a low equivalent series resistance. The capacitor includes a conductive base material composed of a plating film having a specific surface area of 100 mm2/mm3 or more, a dielectric film on a surface of the conductive base material, and an opposed conductor formed so as to be opposed to the conductive base material with the dielectric film interposed therebetween. The plating film constituting the conductive base material is formed by electrolytic plating or electroless plating, and may have a porous form, wire-like form or broccoli-like form.

Abstract: A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

Abstract: A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

Abstract: A hydrogen manufacturing system for performing offgas flow control includes: a vaporizer (1) for heating a material mixture containing a hydrocarbon material; a reforming reactor (2) for generating hydrogen-containing reformed gas by reforming reactions of the material; a PSA separator (5) for repeating a cycle of adsorption and desorption, where in the adsorption PSA separation is performed with an adsorption tower loaded with an adsorbent to adsorb unnecessary components in the reformed gas and extract hydrogen-enriched gas out of the tower, and in the desorption the offgas containing the unnecessary components from the adsorbent and remaining hydrogen is discharged from the tower; and a buffer tank (6) for holding the offgas before supplying to the vaporizer. The offgas flow supply from the tank (6) to the vaporizer is changed continuously over time when the cycle time is changed according to load change on the separator (5).

Abstract: A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

Abstract: A semiconductor device is provided comprising several device components formed in the same substrate, such as a P-substrate having an offset Nch transistor including N-type source and drain each formed in a P-well spatially separated from one another, and the drain surrounded by a low concentration N-type diffusion layer; an offset Pch transistor including P-type source and drain each formed in an N-well spatially separated from one another, and the drain surrounded by a low concentration P-type diffusion layer; a triple well including a deep N-well, and a P-type IP well formed therein; a normal N-well for forming a Pch MOS transistor; and a normal P-well for forming an Nch MOS transistor; in which simultaneously formed are the low concentration N-type diffusion layer, N-well and normal N-well; the P-well and normal P-well; and the low concentration P-type diffusion layer and IP well.

Abstract: This invention provides an electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time. The electroless copper plating solution comprises copper ion, a complexing agent for copper ion, a reducing agent for copper ion and a pH adjusting agent, wherein said reducing agent for copper ion is glyoxylic acid or a salt thereof, said pH adjusting agent is potassium hydroxide and said electroless copper plating solution contains at least one member selected from metasilicic acid, metasilicic acid salt, germanium dioxide, germanic acid salt, phosphoric acid, phosphoric acid salt, vanadic acid, vanadic acid salt, stannic acid and stannic acid salt in an amount of 0.0001 mol/L or more.

Abstract: An electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time. The electroless copper plating solution comprises copper ion, a complexing agent for copper ion, a reducing agent for copper ion and a pH adjusting agent, wherein the reducing agent for copper ion is glyoxylic acid or a salt thereof, the pH adjusting agent is potassium hydroxide and the electroless copper plating solution contains at least one member selected from metasilicic acid, metasilicic acid salt, germanium dioxide, germanic acid salt, phosphoric acid, phosphoric acid salt, vanadic acid, vanadic acid salt, stannic acid and stannic acid salt in an amount of 0.0001 mol/L or more.

Abstract: A resistance element of a semiconductor device includes a first resistance pattern and a second resistance pattern formed adjacent to the first resistance pattern at a lower level, wherein the second resistance pattern is defined by the first resistance pattern in a self-aligned relationship and connected to the first resistance pattern in series.

Abstract: A multilayer wiring substrate which is high in connection reliability is provided through process steps of forming more than one opening, such as a via-hole in a dielectric layer laminated on a substrate, and then applying uniform copper plating to a surface portion of the dielectric layer including the opening to thereby form a wiring layer. An electroless copper plating solution with at least one of mandelonitrile and triethyltetramine mixed therein is used to perform the intended electroless copper plating.

Abstract: A method is provided for removing plating blocking ions, such as anions, in pairs with copper ions and oxidant ions of a copper ion reducing agent from an electroless copper plating solution and keeping a constant salt concentration in the electroless copper plating solution during plating. The electroless copper plating method uses a plating solution containing copper sulfate as copper ion sources, and a copper ion complexing agent as copper ion sources, glyoxylic acid as a copper ion reducing agent, and a pH conditioner. The method is characterized by precipitating and removing sulfuric and oxalic ions in said electroless copper plating solution and keeping an optimum concentration of at least one of sulfuric and oxalic ions in said electroless copper plating solution during plating.

Abstract: A semiconductor device is provided comprising several device components formed in the same substrate, such as a P-substrate having an offset Nch transistor including N-type source and drain each formed in a P-well spatially separated from one another, and the drain surrounded by a low concentration N-type diffusion layer; an offset Pch transistor including P-type source and drain each formed in an N-well spatially separated from one another, and the drain surrounded by a low concentration P-type diffusion layer; a triple well including a deep N-well, and a P-type IP well formed therein; a normal N-well for forming a Pch MOS transistor; and a normal P-well for forming an Nch MOS transistor; in which simultaneously formed are the low concentration N-type diffusion layer, N-well and normal N-well; the P-well and normal P-well; and the low concentration P-type diffusion layer and IP well.

Abstract: A circuit for generating a reference voltage includes a bandgap reference circuit that exhibits low temperature dependency of the output reference voltage. Since temperature dependencies of resistances thereof are appropriately controlled so that the temperature dependency of a load current flowing through divisional resistances is eliminated, it is possible to prevent the linearity of temperature dependency of the forward direction voltages of diodes from degrading. Accordingly, the temperature dependency of output is reduced.

Abstract: A semiconductor device is provided comprising several device components formed in the same substrate, such as a P-substrate having an offset Nch transistor including N-type source and drain each formed in a P-well spatially separated from one another, and the drain surrounded by a low concentration N-type diffusion layer; an offset Pch transistor including P-type source and drain each formed in an N-well spatially separated from one another, and the drain surrounded by a low concentration P-type diffusion layer; a triple well including a deep N-well, and a P-type IP well formed therein; a normal N-well for forming a Pch MOS transistor; and a normal P-well for forming an Nch MOS transistor; in which simultaneously formed are the low concentration N-type diffusion layer, N-well and normal N-well; the P-well and normal P-well; and the low concentration P-type diffusion layer and IP well.

Abstract: A resistance element of a semiconductor device includes a first resistance pattern and a second resistance pattern formed adjacent to the first resistance pattern at a lower level, wherein the second resistance pattern is defined by the first resistance pattern in a self-aligned relationship and connected to the first resistance pattern in series.

Abstract: A method is provided for removing plating blocking ions, such as anions, in pairs with copper ions and oxidant ions of a copper ion reducing agent from an electroless copper plating solution and keeping a constant salt concentration in the electroless copper plating solution during plating. The electroless copper plating method uses a plating solution containing copper sulfate as copper ion sources, and a copper ion complexing agent as copper ion sources, glyoxylic acid as a copper ion reducing agent, and a pH conditioner. The method is characterized by precipitating and removing sulfuric and oxalic ions in said electroless copper plating solution and keeping an optimum concentration of at least one of sulfuric and oxalic ions in said electroless copper plating solution during plating.

Abstract: A resistance element of a semiconductor device includes a first resistance pattern and a second resistance pattern formed adjacent to the first resistance pattern at a lower level, wherein the second resistance pattern is defined by the first resistance pattern in a self-aligned relationship and connected to the first resistance pattern in series.

Abstract: An electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time. The electroless copper plating solution comprises copper ion, a complexing agent for copper ion, a reducing agent for copper ion and a pH adjusting agent, wherein the reducing agent for copper ion is glyoxylic acid or a salt thereof, the pH adjusting agent is potassium hydroxide and the electroless copper plating solution contains at least one member selected from metasilicic acid, metasilicic acid salt, germanium dioxide, germanic acid salt, phosphoric acid, phosphoric acid salt, vanadic acid, vanadic acid salt, stannic acid and stannic acid salt in an amount of 0.0001 mol/L or more.

Abstract: A multilayer wiring substrate which is high in connection reliability is provided through process steps of forming more than one opening, such as a via-hole in a dielectric layer laminated on a substrate, and then applying uniform copper plating to a surface portion of the dielectric layer including the opening to thereby form a wiring layer. An electroless copper plating solution with at least one of mandelonitrile and triethyltetramine mixed therein is used to perform the intended electroless copper plating.

Abstract: A circuit for generating a reference voltage includes a bandgap reference circuit that exhibits low temperature dependency of the output reference voltage. Since temperature dependencies of resistances thereof are appropriately controlled so that the temperature dependency of a load current flowing through divisional resistances is eliminated, it is possible to prevent the linearity of temperature dependency of the forward direction voltages of diodes from degrading. Accordingly, the temperature dependency of output is reduced.