Abstract: A probing device includes a minute probe in which at least an end portion is formed by conductive material, a cantilever having one end to which the probe is attached, and another end fixed to a moving member movable relatively to a sample in each direction of X, Y and Z, a unit for moving the moving member relatively to the sample, a transducing unit for generating information of voltage or current by means of light, a connecting unit having a low electric resistance, for connecting the transducing unit and the end portion of the probe, a detecting unit for detecting a change in a physical amount occurring in the cantilever by a force caused between the probe and the sample by a relative proximity of the moving member to the sample, and a voltage measuring unit for measuring a voltage at a measurement point on the sample, which is determined based on an output of the detecting unit, by way of the transducing unit when the probe is contacted with the measurement point.

Abstract: An electrically programmable read only memory device store data bits in the form of electric charges accumulated in floating gate electrodes of the memory cells, and a spin-on glass film is incorporated in an inter-level insulating film structure over the memory cells so as to create a smooth surface for wirings, wherein a silicon oxynitride film is inserted between the floating gate electrodes and the spin-on-glass film for preventing the accumulated electric charges from undesirable ion-containing water diffused from the spin-on-glass film.

Abstract: A strobo electron beam apparatus is provided having an energy analyzer, which: measures the voltage in the integrated circuit; samples a secondary electron signal by setting and connecting a retarding voltage of the energy analyzer to the measured phase; obtains the waveform of the secondary electron signal by a one time or several times phase scanning; and adds the product of a suitable coefficient and a difference between the secondary electron signal waveform, and a slice level to the retarding voltage and corrects the same. Multiple units are provided for: judging the conversion of the retarding voltage, from the value of the dispersion for the slice level of the secondary electron signal waveform; for adding and giving a mean of the retarding voltage, for obtaining a measured value of retarding voltage having a desired S/N ratio; and for random phase scanning so that the measured value having a desired S/N ratio can be easily obtained.

Abstract: An exposure system or apparatus and method using an electron beam for forming a pattern on a subject, which uses a figure Q which surrounds a pattern P and which is more simplified than the pattern P. Data related to the positions of the vertical and horizontal electron beam used to expose the pattern are stored in a pattern package memory based upon the surrounding figure. The data related to the positions of the electron beam, data related to the start-points of the surrounding figure, and signals based upon the scanning data are supplied to a deflection device of an electron beam device.

Abstract: A back-scattered electron detector for use in an electron microscope of an electron beam exposure system for detecting back-scattered electrons from a specimen includes a transparent plate employed as a light transmitting guide, and a part of the plate having a plastic scintillator coated thereon which emits light outputs in accordance with the back-scattered electrons. Gratings are provided at the scintillator part of the plate to reflect the emitted light outputs so as to be transmitted to a photo-electric convertor at the end of the plate. An aluminum layer is coated on the outside surface of the transparent plate for increasing light reflecting efficiency thereof.