Abstract: There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle, the cycle including: (a) forming a layer on a surface of the base by exposing the base to a modifying agent; and (b) causing a reaction between a halogen-containing radical and the base by exposing the layer to a halogen-containing gas such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Abstract: Disclosed is a mask defect repair apparatus that is capable of performing defect repair with high accuracy without exposure of a mask to air while being moved between the mask defect repair apparatus and an inspection device. The mask defect repair apparatus emits charged particle beams with an amount of irradiation therewith which is corrected by a correction unit while supplying gas to a defect of the mask, thereby forming a deposition film.

Abstract: Provided is a focused ion beam processing apparatus including: an ion source; a sample stage a condenser lens; an aperture having a slit in a straight line shape; a projection lens and the sample stage, wherein, in a transfer mode, by Köhler illumination, with an applied voltage of the condenser lens when a focused ion beam is focused on a main surface of the projection lens scaled to be 100, the applied voltage is set to be less than 100 and greater than or equal to 80; a position of the aperture is set such that the focused ion beam is masked by the aperture with the one side of the aperture at a distance greater than 0 ?m and equal to or less than 500 ?m from a center of the focused ion beam; and the shape of the slit is transferred onto the sample.

Abstract: Provided is a focused ion beam processing apparatus including: an ion source; a sample stage a condenser lens; an aperture having a slit in a straight line shape; a projection lens and the sample stage, wherein, in a transfer mode, by Köhler illumination, with an applied voltage of the condenser lens when a focused ion beam is focused on a main surface of the projection lens scaled to be 100, the applied voltage is set to be less than 100 and greater than or equal to 80; a position of the aperture is set such that the focused ion beam is masked by the aperture with the one side of the aperture at a distance greater than 0 ?m and equal to or less than 500 ?m from a center of the focused ion beam; and the shape of the slit is transferred onto the sample.

Abstract: Disclosed is a mask defect repair apparatus that is capable of performing defect repair with high accuracy without exposure of a mask to air while being moved between the mask defect repair apparatus and an inspection device. The mask defect repair apparatus emits charged particle beams with an amount of irradiation therewith which is corrected by a correction unit while supplying gas to a defect of the mask, thereby forming a deposition film.

Abstract: An inductively coupled plasma generating device is configured to include a plasma torch, a high frequency induction coil and a high frequency power source. In addition, a heat transfer member, in which a first terminal is connected to the high frequency induction coil and a second terminal is connected to a cooling block, is disposed in the inductively coupled plasma generating device. The second terminal of the heat transfer member is located above the first terminal, thereby causing condensed operating fluid to fall and move toward the first terminal due to the action of gravity. Accordingly, it is possible to achieve excellent cooling capacity by improving circulation and mobility of the operating fluid.

Abstract: An ICP emission spectrometer is schematically configured to include an inductively coupled plasma generation unit, a light condensing unit, a spectroscope, a detector, and a controller. The detector includes a photomultiplier and has a detector controller and an input unit. The photomultiplier has voltage dividing resistors, which make an amplification factor not to become constant immediately due to a change in an application voltage applied to the photomultiplier, but the detector controller controls an idle voltage and an idle voltage application time so that a multiplication factor becomes constant, during a period from when analysis conditions are input to the input unit in advance until a sample containing an analysis-targeted element is introduced into the inductively coupled plasma generation unit.

Abstract: An inductively coupled plasma generating device is configured to include a plasma torch, a high frequency induction coil and a high frequency power source. In addition, a heat transfer member, in which a first terminal is connected to the high frequency induction coil and a second terminal is connected to a cooling block, is disposed in the inductively coupled plasma generating device. The second terminal of the heat transfer member is located above the first terminal, thereby causing condensed operating fluid to fall and move toward the first terminal due to the action of gravity. Accordingly, it is possible to achieve excellent cooling capacity by improving circulation and mobility of the operating fluid.

Abstract: An ICP emission spectrometer is schematically configured to include an inductively coupled plasma generation unit, a light condensing unit, a spectroscope, a detector, and a controller. The detector includes a photomultiplier and has a detector controller and an input unit. The photomultiplier has voltage dividing resistors, which make an amplification factor not to become constant immediately due to a change in an application voltage applied to the photomultiplier, but the detector controller controls an idle voltage and an idle voltage application time so that a multiplication factor becomes constant, during a period from when analysis conditions are input to the input unit in advance until a sample containing an analysis-targeted element is introduced into the inductively coupled plasma generation unit.

Abstract: A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass.

Abstract: A composite focused ion beam device includes a first ion beam irradiation system 10 including a liquid metallic ion source for generating a first ion, and a second ion beam irradiation system 20 including a gas field ion source for generating a second ion.

Abstract: A focused ion beam apparatus includes a plasma generator having a plasma torch therein, which lets plasma flow out while being kept inside, a differential exhaust chamber that is connected to the plasma torch via the torch orifice to cause adiabatic expansion of the plasma flowing out of the plasma torch to form a supersonic flow of the plasma, a drawing orifice provided at the differential exhaust chamber at a position facing the torch orifice to draw ions from the supersonic flow of the plasma, a drawing electrode that electrostatically accelerates ions having passed through the drawing orifice to further draw ions, and an ion optical system that focuses the ions drawn from the drawing electrode and causing the ions to enter the sample by optically manipulating the ions.

Abstract: A focused ion beam apparatus includes a plasma generator having a plasma torch therein, which lets plasma flow out while being kept inside, a differential exhaust chamber that is connected to the plasma torch via the torch orifice to cause adiabatic expansion of the plasma flowing out of the plasma torch to form a supersonic flow of the plasma, a drawing orifice provided at the differential exhaust chamber at a position facing the torch orifice to draw ions from the supersonic flow of the plasma, a drawing electrode that electrostatically accelerates ions having passed through the drawing orifice to further draw ions, and an ion optical system that focuses the ions drawn from the drawing electrode and causing the ions to enter the sample by optically manipulating the ions.

Abstract: In an ICP analyzer, a spray chamber is provided to improve the efficiency of introducing a sample fluid into a plasma, and that is capable of performing analysis with high sensitivity by suppressing the proportion of a solvent component that reaches a plasma torch.

Abstract: A mechanism is provided for reducing contamination of the interior of an apparatus by a sample and for performing a stable measurement. An ion lens has an Einzel lens for converging an ion beam, a deflector for deflecting the ion beam and a pair of compensation electrodes each composed of one or more elements. A mechanism is provided for controlling a voltage to be applied to each of the electrodes as desired. Also, alternatively, a shield plate is provided in a flow path of the ion beam. A drive mechanism is provided for projecting and retracting the shield plate. With such an arrangement, it is possible not only to effectively detect a small amount of impurities contained in a sample but also to stably measure the concentration thereof.

Abstract: A sample introducing apparatus for an inductively coupled plasma mass spectrometric and spectrochemical analyzer is provided to have a branch pipe at a sample pipe of a plasma torch for introducing an oxygen gas controllable in flow rate. The sample, after mixed with a sufficient amount of oxygen, is burnt by a plasma to oxidize and vaporize carbon.

Abstract: A device for introducing a sample into an analyzer comprises a sample container for storing a sample solution, a fluid delivery line for delivering a volume of the sample solution from the sample container to the analyzer, and a washing fluid container for storing a washing fluid for delivery to the analyzer by the fluid delivery line to wash the fluid delivery line. A moving mechanism moves the fluid delivery line between the sample container and the washing fluid container in response to a control signal from a control apparatus to sequentially insert the fluid delivery line into the sample container and the washing fluid container for delivery of the sample solution and the washing fluid to the analyzer.

Abstract: A plasma ion source mass analyzer composed of: a plasma ion source for ionizing a sample in a plasma; a vacuum vessel; a sampling cone and a schema cone each having a front end provided with a hole for passage into the vacuum vessel of a beam of ions generated in the plasma, the holes in the cones defining an inlet axis of the beam; a mass filter disposed in the vacuum vessel for mass-separating ions in the beam; an ion lens disposed in the vacuum vessel to lead ions in the beam to the mass filter, the ion lens having an entrance which subtends a solid angle relative to a point in the hole of the schema cone; an extraction electrode disposed in the vacuum vessel between the schema cone and the ion lens to lead ions passing through the schema cone to the ion lens; a gate valve disposed between the extraction electrode and the ion lens; a detector set in the vacuum vessel to detect ions which pass through the mass filter; and a diaphragm mounted within the extraction electrode for narrowing the beam which passe

Abstract: Simplified measurements may be conducted using a plasma ion source mass spectrometer by performing an ion count while scanning an ion beam and setting voltages applied to electrodes of at least an ion lens and a deflector at values which maximize the count value. The mass spectrometer comprises a plasma ion source for ionizing a sample in a plasma, a vacuum vessel containing deflection, detection and monitoring devices, a sampling interface for introducing the ionized sample into the vacuum vessel, and a data processing unit. An ion lens collects and condenses the ionized sample. A mass filter separates ions in the ion beam by mass. A deflector deflects the ion beam by 90 degrees to prevent light from the plasma from entering the mass filter. A scanning electrode scans the ion beam, and a detector detects ions that have passed through the mass filter and provides a corresponding output signal.