Abstract: In order to provide an ion beam lens to which a film causing a charge and rendering the analysis unstable will not adhere, the ion lens is provided with a deflector for deflecting an ion beam 90.degree.. The side of the deflector opposite the sampling interface is provided with an opening. Also, a correction electrode having at least a pair of elements is interposed between the deflector and a mass filter. Not only may a minute amount of impurities in a sample be detected, but also measurements may be conducted on a consistently stable basis.

Abstract: An inductively coupled mass spectrometer for detecting impurities present in infinitesimal concentrations in a sample. The basic spectrometer structure includes: a nebulizer connected to receive a solution of the sample and a gas for causing the nebulizer to produce a spray in the form of a mist composed of droplets of the sample solution; a spray chamber disposed for receiving the spray and classifying the droplets in the spray; a plasma torch operative for conducting a stream composed of the sample solution and at least one gas; a high frequency power source and a work coil coupled to the plasma torch for supplying energy to generate and maintain a plasma which ionizes the sample solution in the stream; and a mass detector disposed for receiving the ionized sample solution from the plasma torch and operative for detecting impurities in the ionized sample solution.

Abstract: An object of the present invention is to provide a detection system wherein ion counting is performed by varying the quantity of the ions incident on a detector 13 of an inductive plasma mass spectrometer depending on the concentration of the impurities to be measured, thereby extending the life of the detector 13, expanding the range for measurement of impurities in high concentrations, and reducing costs. An assist electrode 30 having a hole for leading the ions which have passed through a mass filter 10 to a detector 30 is disposed between the axis of the mass filter 10 and the detector 13, and a means for applying voltage to a repeller electrode 12 and the assist electrode 30 is provided to vary the difference in voltage between the electrodes 12 and 30 depending on the concentration of impurities to be measured.

Abstract: A structure for enabling control of the plasma potential of an ICP-MS. The structure includes: a shield plate 10 made of metal inserted between a plasma torch 1 and a high-frequency coil 2, a variable capacitor 11 connected between the shield plate 10 and ground, and an insulation member 15 is arranged to prevent contact of the high-frequency coil 2 with the shield plate 10. Even if a sample is introduced into ICP by any known method, it becomes capable to perform ICP-MS analysis while optimizing the response to interfering ions and detection sensitivity.

Abstract: A focused ion beam is irradiated on a predetermined area of a substrate on which a film is to be formed, and a vapor stream of film-forming depositable material is directed onto a localized area of the substrate which is being irradiated with the focused ion beam to convert the film-forming material to a film deposit on the predetermined area of the substrate. The process can be used to repair white-spot defects in masks and to otherwise deposit films having sharply defined edges and widths in the submicron range.

Abstract: An apparatus for carrying out inductively coupled plasma mass spectrometry to effect identification and quantification of a trace element contained in a sample solution. A plasma torch is provided for converting the sample solution into a plasma. A sampling interface has a sampling orifice and a skimmer orifice for drawing therethrough the plasma to form an ion beam. A mass filter is provided for effecting mass-separation of the ion beam to filter ions. A detector detects ions which pass through the mass filter. An optical system is composed of a lens, a deflector and a junction member for efficiently introducing the ion beam from the sampling interface into the mass filter. An ammeter is connected to the junction member between the optical system and the mass filter.

Abstract: An apparatus for treating a sample comprises an ion source for irradiating a designated area of the sample with a focused ion beam, a vessel for storing compound to be vaporized, a heater surrounding the vessel for heating the compound to vaporize the same inside the vessel to produce compound vapor, and a nozzle for directing the compound vapor in the form of a vapor stream onto the designated area of the sample being irradiated with the focused ion beam. A valve is disposed along the fluid communication path between the vessel and the nozzle and has a closed state for blocking the flow of compound vapor through the nozzle and an open state for permitting the flow of compound vapor through the nozzle. The apparatus can be used to form pattern films on substrates, to repair defects in photo-masks and X-ray masks, and to cut or connect wiring in integrated circuits.

Abstract: According to the present invention, an apparatus for correcting a pattern film wherein an organic compound vapor is directed to a defect in a mask or IC while an ion beam is irradiated and scanned for depositing film on the white defect is furnished with a circuit for calculating film deposition area based on the reproduced image of a mask pattern, whereby elongating the total scanning time by inserting blank time in the scanning time, during which the ion beam is not irradiated (this operation is hereinafter referred to as blanking), when the ratio of the film deposition area to the ion beam current for an organic compound directed by a gas gun is lower than a predetermined level. Because of this operation, the molecule of the organic compound vapor is sufficiently deposited on the mask of IC surface, and therefore, a film having good light shielding or good conductance can be deposited with strong bonding.

Abstract: A process for forming a pattern film comprises irradating a predetermined area of a substrate with an ion beam while simultaneously having present a polymerizable or carbonizable organic compound to thereby polymerize or carbonize the compound upon the area, the compound having a vapor pressure at room temperature of 1.times.10.sup.-4 to 5.times.10.sup.-3 Torr. The process is particularly suited for correcting so-called white-spot defects in the manufacture of photomasks.

Abstract: Apparatus for modifying a patterned film, composed of an ion source for producing an ion beam which is focused and caused to impinge upon a sample to microscopically machine a small region upon the surface of the sample; scanning electrodes and a scanning control cirucit for scanning the focused ion beam; a detector that detects the secondary charged particles emanating from the sample in response to the irradiation; and a display device for displaying the pattern formed upon the sample according to the output from the detector. The apparatus further includes a nozzle for spraying etching gas against only a certain portion of the pattern when the focused ion beam is caused to fall upon the certain portion of the pattern, the gas being activated by the ion beam and capable of etching the material of the film upon which the pattern is formed. The focused ion beam that irradiates and scans the sample is not permitted to move from one spot to a neighboring spot until a given period of time elapses.

Abstract: The present invention relates to an apparatus for repairing a pattern film of a photomask, reticle, X-ray mask, semiconductor, etc. In the apparatus, a focused ion beam is applied to an excess portion of a pattern film which is formed on a substrate. The excess portion of the pattern film is removed by means of ion sputtering. For repairing an excess portion of the pattern film, an etching gas is provided to a position that is being irradiated with the scanning focused ion beam thereby increasing the reliability of repairing and carrying out repair of the excess portion of the pattern film with good quality. Further, the removal speed of the excess portion film is improved.