Abstract: A non-transitory computer-readable storage medium storing a printer driver, when being executed by a processor of the computing device, causes a computing device to perform prohibition processing including: obtaining setup items associated with print features of the printer device and corresponding option values from PrintTicket, to create check data; checking the check data for a setup item causing a conflict between option values; and in response to finding a setup item causing a conflict between option values, replacing an option value in the PrintTicket, which is set for the setup item causing the conflict, with another option value.

Abstract: According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

Abstract: A printer driver operating in an information processing device transmitting print job data to printing devices causes the information processing device to function as: a configuration processing unit configured to hold configuration information about the printer driver, and generate configuration data; a user interface unit configured to generate a print setting screen, and cause a display unit to display the print setting screen; and a drawing unit configured to perform a drawing process on print job data generated in the information processing device, wherein the drawing unit includes specific drawing units prepared for respective model groups classifying the printing devices in accordance with attributes of models of the printing devices, the specific drawing units being configured to perform a model-group-specific drawing process, and selects an appropriate specific drawing unit from among the plurality of specific drawing units, to perform a drawing process with the selected specific drawing unit.

Abstract: According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0<x1?1) and a first low Al composition layer. A compressive strain is applied to the first low Al composition layer. Unstrained GaN has a first lattice spacing. The Alx1Ga1-x1N (0<x1?1) when unstrained has a second lattice spacing. The first high Al composition layer has a third lattice spacing. An Al composition ratio of the first low Al composition layer is not more than a ratio of a difference between the first and third lattice spacings to a difference between the first and second lattice spacings.

Abstract: According to one embodiment, a semiconductor manufacturing apparatus includes a cover part, a gas introduction part provided in the cover part, and a shower plate.

Abstract: An operation area of a motor is increased without increasing the capacity of a switching element. A current limiter which limits a current flowing in switching elements to prevent the current from exceeding a predetermined current limit value is provided. A current limit value controller which decreases the current limit value if a loss generated in the switching elements increases at a same current value, and increases the current limit value if the loss decreases at a same current value, is provided.

Abstract: Disclosed is a server including: a restriction information registering unit configured to fetch restriction information relating to a setting of a print condition for each user and to register the restriction information in the printer driver data area; and a distribution unit configured to download the printer driver program and the restriction information to a client terminal, wherein in case that the printer driver program is executed by the client terminal, the printer driver program causes the client terminal to have a print condition setting function for obtaining the restriction information for the user who currently uses the client terminal from the printer driver data area of the client terminal, preparing a print setting window in which the print condition is restricted in accordance with the obtained restriction information and displaying the print setting window on a display unit of the client terminal.

Abstract: A printing apparatus for conducting direct printing from a client computer via a web browser, having a storage unit 13 and 16 stores print setting information and a URL associated with the print setting information, and a job control unit 12 reads from the storage unit the print setting information associated with the URL entered by a user into the web browser, in order to reflect the print setting information as print setting of print data.

Abstract: A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)?Wi)/Wi?0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.

Abstract: An information transmitting device includes: a receiving unit configured to receive setting of a first mode or a second mode as a transmitting mode; a transmitting unit configured to transmit the data in the transmitting mode the setting of which is received; a first obtaining unit configured to obtain identification information associated with a process by an application for setting; a storage unit configured to store the obtained identification information; a second obtaining unit configured to obtain the identification information regarding the transmitting process of the data when the first mode is set; a determining unit configured to determine whether the identification information stored in the storage unit is identical to the identification information obtained by the second obtaining unit; and a switching unit configured to switch the transmitting mode to the second mode when it is determined that the pieces of identification information are not identical to each other.

Abstract: A non-transitory computer-readable storage medium storing a printer driver includes a printer driver core component and a print setup user interface component. The print setup user interface component causes the computing device to control a display section to display one or more setup user interface portions by determining whether a setup user interface portion designated by designation information obtained from the printer driver core component is implemented in the print setup user interface component; in response to determining that the designated setup user interface portion is not implemented, searching for a compatible setup user interface portion; and in response to determining that the designated or compatible setup user interface portion is implemented, controlling the display section to display the designated or compatible setup user interface portion.

Abstract: According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0<x1?1) and a first low Al composition layer. A compressive strain is applied to the first low Al composition layer. Unstrained GaN has a first lattice spacing. The Alx1Ga1-x1N (0<x1?1) when unstrained has a second lattice spacing. The first high Al composition layer has a third lattice spacing. An Al composition ratio of the first low Al composition layer is not more than a ratio of a difference between the first and third lattice spacings to a difference between the first and second lattice spacings.

Abstract: According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×1020 cm?3 and not more than 3×1020 cm?3. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×1018 cm?3.

Abstract: A non-transitory computer-readable storage medium stores a printer driver. The printer driver causes the processor of a computing device to function as a printer driver core section and a print setup user interface section and causes these sections to perform the following processing. The processing includes: defining an area in a PrintTicket to create a first PrintTicket, by the printer driver core section; operating a display section of the computing device to display the print setup screen, and incorporating another PrintTicket into the area of the first PrintTicket to create a second PrintTicket, by the print setup user interface section, where the another PrintTicket includes a description of information about another print feature having been inputted on the print setup screen. The processing further includes converting the second PrintTicket into a third PrintTicket which can be interpreted by the print device, by the printer driver core section.

Abstract: According to one embodiment, a semiconductor device includes a functional layer of a nitride semiconductor. The functional layer is provided on a nitride semiconductor layer including a first stacked multilayer structure provided on a substrate. The first stacked multilayer structure includes a first lower layer, a first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness.

Abstract: A UI program is recorded on a non-transitory computer readable medium for operating a computer as a print control apparatus in cooperation with a driver core module. The UI program causes the computer to execute: a first display control step of running a display program and displaying first setting items EC? (EC1 to EC5 and EC41), and a second display control step of running a default program and displaying a second setting item EC? (EC42) which cannot be displayed by the display program. In the second display control step, the second setting item EC? (EC42) is displayed in a position adjacent to one of the first setting items EC? (EC41) having the same group information as the second setting item EC? (EC42).

Abstract: According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0<x1?1) and a first low Al composition layer. A compressive strain is applied to the first low Al composition layer. Unstrained GaN has a first lattice spacing. The Alx1Ga1-x1N (0<x1?1) when unstrained has a second lattice spacing. The first high Al composition layer has a third lattice spacing. An Al composition ratio of the first low Al composition layer is not more than a ratio of a difference between the first and third lattice spacings to a difference between the first and second lattice spacings.

Abstract: A refrigeration apparatus includes a refrigerant circuit with a compressor, a power module, a refrigerant cooler in contact with the power module, and an IPM motor which drives the compressor. A refrigerant in the refrigerant circuit flows through the refrigerant cooler, and cooling of the power module is performed by dissipating heat to the refrigerant flowing in the refrigerant cooler. A controller in the refrigeration apparatus outputs a driving signal to a drive circuit to reduce the number of switching operations of switching elements by performing overmodulation control such that there exists a carrier cycle in which no switching is performed.

Abstract: According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.