Abstract: A thin film static induction transistor comprises a first n type semiconductor layer provided on an insulative substrate and a second n type semiconductor layer mounted on the first layer. The second layer includes a first region having a first level top wall and a second region having a second level top wall lower that the first level top wall. The first and second regions are alternately arranged. A third semiconductor layer is provided on the first level top wall. A recess is formed which includes side walls of the third layers, side wall of the first regions and the second level top wall. A fourth semiconductor layer is deposited on the inner wall of the recess, and a gate electrode is provided on the fourth layer. The fourth layer consists of an intrinsic semiconductor layer or a semiconductor layer having a lower impurity concentration than the second layer.

Abstract: A solid state image-sensing device is disclosed which includes a base board fitted with a plurality of connection pins, an interline transfer charge coupled device (IT-CCD) serving as an area sensor, and a pair of bimorph piezoelectric vibrating elements which jointly vibrate to periodically vibrate the IT-CCD relative to an incoming image light in a plane substantially parallel with the surface of the base board, and wherein the piezoelectric vibrating elements are elastically held above the base board by support plates having a spring action, thereby efficiently vibrating the IT-CCD.

Abstract: A piezoelectric displacing device includes a plurality of longitudinal effect-type piezoelectric displacing members arranged juxtaposed to each other such that displacement axes thereof are substantially parallel to each other, each of said piezoelectric displacing member converting a voltage applied thereto to a mechanical displacement. Connectors are provided which mechanically connect the piezoelectric displacing members in series with each other and derive a sum of amounts of displacement of the piezoelectric displacing members along the displacement axes thereof to give an amount of displacement of the device.

Abstract: An insulation system for winding of electric rotating machines having thermal resistance of class H or more and excellent adhesiveness between a conductor and an insulating layer and resistance to thermal stress can be produced by wrapping a plurality of layers of an insulating tape or sheet having thermal resistance of class H or more around a winding conductor, impregnating the thus treated winding conductor with a solventless varnish consisting essentially of 1 equivalent of an epoxy compound containing at least two vicinal epoxy groups, more than one equivalent of an organic polyisocyanate, and then heating the inpregnated winding conductor at a temperature above 60.degree. C. for a time sufficient to form and cure a resin containing as recurring units at least two isocyanurate rings directly bonded to one another through the residue of the polyisocyanate and two oxazolidone rings directly bonded to each other through the residue of the polyepoxide in the presence of 0.