Abstract: Semiconductor devices may include a first semiconductor chip, a first redistribution layer on a bottom surface of the first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a second redistribution layer on a bottom surface of the second semiconductor chip, a mold layer extending on sidewalls of the first and second semiconductor chips and on the bottom surface of the first semiconductor chip, and an external terminal extending through the mold layer and electrically connected to the first redistribution layer. The second redistribution layer may include an exposed portion. The first redistribution layer may include a first conductive pattern electrically connected to the first semiconductor chip and a second conductive pattern electrically insulated from the first semiconductor chip. The exposed portion of the second redistribution layer and the second conductive pattern of the first redistribution layer may be electrically connected by a first connection wire.

Abstract: Semiconductor devices may include a first semiconductor chip, a first redistribution layer on a bottom surface of the first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a second redistribution layer on a bottom surface of the second semiconductor chip, a mold layer extending on sidewalls of the first and second semiconductor chips and on the bottom surface of the first semiconductor chip, and an external terminal extending through the mold layer and electrically connected to the first redistribution layer. The second redistribution layer may include an exposed portion. The first redistribution layer may include a first conductive pattern electrically connected to the first semiconductor chip and a second conductive pattern electrically insulated from the first semiconductor chip. The exposed portion of the second redistribution layer and the second conductive pattern of the first redistribution layer may be electrically connected by a first connection wire.

Abstract: Disclosed is a semiconductor package comprising a lower substrate including a conductive line; a first semiconductor chip on the lower substrate; an under-fill layer between the first semiconductor chip and the lower substrate, the under-fill layer including a central part below the first semiconductor chip and an edge part isolated from direct contact with the central part in a first direction parallel to a top surface of the lower substrate, and a recess region between the central part and the edge part. The recess region may be defined by a sidewall of the central part, a sidewall of the edge part, and a top surface of the conductive line in the lower substrate.

Abstract: Disclosed is a semiconductor package comprising a package substrate, a substrate on the package substrate, a first semiconductor chip mounted on the substrate, and a stiffener structure on the package substrate and having a hole. The stiffener structure is laterally spaced apart from the substrate. The hole penetrates a top surface of the stiffener structure and a bottom surface of the stiffener structure. When viewed in plan, the hole overlaps a corner region of the package substrate.

Abstract: Disclosed are semiconductor packages and methods of manufacturing the same. The method of manufacturing a semiconductor package may include providing a carrier substrate having a trench formed on a first top surface of the carrier substrate, providing a first semiconductor chip on the carrier substrate, mounting at least one second semiconductor chip on a second top surface of the first semiconductor chip, coating a mold member to surround a first lateral surface of the first semiconductor chip and a second lateral surface of the at least one second semiconductor chip, and curing the mold member to form a mold layer. The trench may be provided along a first edge of the first semiconductor chip. The mold member may cover a second edge of a bottom surface the first semiconductor chip.

Abstract: A semiconductor package including a heat spreading layer having at least one hole, a first semiconductor chip below the heat spreading layer, a redistribution structure below the first semiconductor chip, a first mold layer between the heat spreading layer and the redistribution structure, a shielding wall extending from the redistribution structure and the heat spreading layer and surrounding the first semiconductor chip, and a first conductive pillar extending from the redistribution structure into the hole may be provided.

Abstract: Disclosed are semiconductor packages and methods of manufacturing the same. The method of manufacturing a semiconductor package may include providing a carrier substrate having a trench formed on a first top surface of the carrier substrate, providing a first semiconductor chip on the carrier substrate, mounting at least one second semiconductor chip on a second top surface of the first semiconductor chip, coating a mold member to surround a first lateral surface of the first semiconductor chip and a second lateral surface of the at least one second semiconductor chip, and curing the mold member to form a mold layer. The trench may be provided along a first edge of the first semiconductor chip. The mold member may cover a second edge of a bottom surface the first semiconductor chip.

Abstract: A semiconductor device includes a semiconductor substrate divided into a pad region and a cell region and having an active surface and an inactive surface opposite to the active surface, a plurality of metal lines on the active surface of the semiconductor substrate, passivation layers on the active surface of the semiconductor substrate, and a plurality of bumps in the cell region. The passivation layers include a first passivation layer covering the plurality of metal lines and having a non-planarized top surface along an arrangement profile of the plurality of metal lines, and a second passivation layer on the non-planarized top surface of the first passivation layer and having a planarized top surface on which the plurality of bumps are disposed.

Abstract: Semiconductor devices may include a first semiconductor chip, a first redistribution layer on a bottom surface of the first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a second redistribution layer on a bottom surface of the second semiconductor chip, a mold layer extending on sidewalls of the first and second semiconductor chips and on the bottom surface of the first semiconductor chip, and an external terminal extending through the mold layer and electrically connected to the first redistribution layer. The second redistribution layer may include an exposed portion. The first redistribution layer may include a first conductive pattern electrically connected to the first semiconductor chip and a second conductive pattern electrically insulated from the first semiconductor chip. The exposed portion of the second redistribution layer and the second conductive pattern of the first redistribution layer may be electrically connected by a first connection wire.

Abstract: A semiconductor device includes a semiconductor substrate divided into a pad region and a cell region and having an active surface and an inactive surface opposite to the active surface, a plurality of metal lines on the active surface of the semiconductor substrate, passivation layers on the active surface of the semiconductor substrate, and a plurality of bumps in the cell region. The passivation layers include a first passivation layer covering the plurality of metal lines and having a non-planarized top surface along an arrangement profile of the plurality of metal lines, and a second passivation layer on the non-planarized top surface of the first passivation layer and having a planarized top surface on which the plurality of bumps are disposed.

Abstract: A semiconductor package includes a semiconductor chip that includes a first region and a second region spaced apart from the first region; a plurality of connection bumps disposed under the first region of the semiconductor chip; and a protection layer that covers a bottom surface of the semiconductor chip in the second region, wherein the protection layer does not cover the bottom surface of the semiconductor chip in the first region and is not disposed between the plurality of connection bumps. The semiconductor chip of the semiconductor package is protected by the protection layer.

Abstract: Provided are a semiconductor package and a method of manufacturing the same. The semiconductor package comprises a substrate, a semiconductor chip on the substrate, an interconnect substrate spaced apart from the semiconductor chip on the substrate and including a conductive member therein, a solder ball on the interconnect substrate and electrically connected to the conductive member, a polymer layer on the interconnect substrate and the semiconductor chip and including an opening through which the solder ball is exposed, and polymer particles in the solder ball and including the same material as the polymer layer.

Abstract: A semiconductor package includes a lower chip, an upper chip on the lower chip, and an adhesive layer between the lower chip and the upper chip. The lower chip has first through silicon vias (TSVs) and pads on an upper surface thereof. The pads are connected to the first TSVs, respectively. The upper chip includes bumps on a lower surface thereof. The bumps are bonded to the pads. Vertical centerlines of the bumps are aligned with vertical centerlines of the first TSVs, respectively. The vertical centerlines of the bumps are offset from the vertical centerlines of the pads, respectively, in a peripheral region of the lower chip.

Abstract: A semiconductor package is provided including a package substrate, a first semiconductor chip on the substrate, with a first surface and a second surface opposite to each other; a plurality of first connection terminals disposed on the first surface contacting an upper surface of the substrate; a second semiconductor chip disposed on the second surface, with a third surface and a fourth surface opposite to each other; a plurality of second connection terminals disposed on the third surface contacting the second surface, wherein an absolute value between a first area, the sum of areas in which the plurality of first connection terminals contact the upper surface of the package substrate, and a second area, the sum of areas in which the plurality of second connection terminals contact the second surface of the first semiconductor chip, is equal to or less than about 0.3 of the first area.

Abstract: A semiconductor package including a heat spreading layer having at least one hole, a first semiconductor chip below the heat spreading layer, a redistribution structure below the first semiconductor chip, a first mold layer between the heat spreading layer and the redistribution structure, a shielding wall extending from the redistribution structure and the heat spreading layer and surrounding the first semiconductor chip, and a first conductive pillar extending from the redistribution structure into the hole may be provided.

Abstract: A semiconductor package is provided including a package substrate, a first semiconductor chip on the substrate, with a first surface and a second surface opposite to each other; a plurality of first connection terminals disposed on the first surface contacting an upper surface of the substrate; a second semiconductor chip disposed on the second surface, with a third surface and a fourth surface opposite to each other; a plurality of second connection terminals disposed on the third surface contacting the second surface, wherein an absolute value between a first area, the sum of areas in which the plurality of first connection terminals contact the upper surface of the package substrate, and a second area, the sum of areas in which the plurality of second connection terminals contact the second surface of the first semiconductor chip, is equal to or less than about 0.3 of the first area.

Abstract: A semiconductor device includes a semiconductor substrate divided into a pad region and a cell region and having an active surface and an inactive surface opposite to the active surface, a plurality of metal lines on the active surface of the semiconductor substrate, passivation layers on the active surface of the semiconductor substrate, and a plurality of bumps in the cell region. The passivation layers include a first passivation layer covering the plurality of metal lines and having a non-planarized top surface along an arrangement profile of the plurality of metal lines, and a second passivation layer on the non-planarized top surface of the first passivation layer and having a planarized top surface on which the plurality of bumps are disposed.

Abstract: A semiconductor package including a heat spreading layer having at least one hole, a first semiconductor chip below the heat spreading layer, a redistribution structure below the first semiconductor chip, a first mold layer between the heat spreading layer and the redistribution structure, a shielding wall extending from the redistribution structure and the heat spreading layer and surrounding the first semiconductor chip, and a first conductive pillar extending from the redistribution structure into the hole may be provided.

Abstract: Disclosed are semiconductor packages and methods of manufacturing the same. The method of manufacturing a semiconductor package may include providing a carrier substrate having a trench formed on a first top surface of the carrier substrate, providing a first semiconductor chip on the carrier substrate, mounting at least one second semiconductor chip on a second top surface of the first semiconductor chip, coating a mold member to surround a first lateral surface of the first semiconductor chip and a second lateral surface of the at least one second semiconductor chip, and curing the mold member to form a mold layer. The trench may be provided along a first edge of the first semiconductor chip. The mold member may cover a second edge of a bottom surface the first semiconductor chip.

Abstract: A semiconductor package includes a semiconductor chip that includes a first region and a second region spaced apart from the first region; a plurality of connection bumps disposed under the first region of the semiconductor chip; and a protection layer that covers a bottom surface of the semiconductor chip in the second region, wherein the protection layer does not cover the bottom surface of the semiconductor chip in the first region and is not disposed between the plurality of connection bumps. The semiconductor chip of the semiconductor package is protected by the protection layer.