Patents by Inventor Yu-Chen Kuo
Yu-Chen Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240162372Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes well layers and barrier layers that are alternately stacked. The active layer has an upper surface that is adjacent to the second semiconductor layer, and a lower surface that is opposite to the upper surface. The first semiconductor layer is doped with an n-type dopant, which has a first concentration of 5E17/cm3 at a first point in the first semiconductor layer. The first point of the first semiconductor layer and the lower surface of the active layer have a first distance therebetween. The first distance ranges from 150 nm to 500 nm.Type: ApplicationFiled: November 9, 2023Publication date: May 16, 2024Inventors: Weihuan LI, Jinghua CHEN, Huan-Shao KUO, Yu-Ren PENG, Dongpo CHEN, Chia-Hung CHANG
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Patent number: 11977274Abstract: An optical photographing lens assembly includes seven lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. Each of the seven lens elements of the optical photographing lens assembly has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the first lens element is concave in a paraxial region thereof. The object-side surface of the first lens element is aspheric and has at least one critical point in an off-axis region thereof.Type: GrantFiled: November 2, 2022Date of Patent: May 7, 2024Assignee: LARGAN PRECISION CO., LTD.Inventors: Cheng-Chen Lin, Yu-Tai Tseng, Tzu-Chieh Kuo
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Publication number: 20240136471Abstract: A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1?2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0<y1?1. The capping layer has an Al content which increases and then remains constant along the first direction. A light-emitting apparatus includes the light-emitting device is also provided.Type: ApplicationFiled: October 19, 2023Publication date: April 25, 2024Inventors: Weihuan LI, JInghua CHEN, Yu-Ren PENG, Huan-Shao KUO, Chia-Hung CHANG
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Publication number: 20240113695Abstract: A modulation device including a plurality of electronic elements, at least one first signal line and a first driving circuit is provided. The at least one first signal line is respectively electrically connected to at least one of the electronic elements. The first driving circuit is electrically connected to the at least one first signal line. The first driving circuit provides a first signal to at least one of the at least one first signal line. The first signal includes a first pulse. The first pulse includes a first section and a second section closely adjacent to the first section.Type: ApplicationFiled: August 30, 2023Publication date: April 4, 2024Applicant: Innolux CorporationInventors: Yi-Hung Lin, Kung-Chen Kuo, Yu-Chia Huang, Nai-Fang Hsu
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Publication number: 20240097067Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.Type: ApplicationFiled: December 4, 2023Publication date: March 21, 2024Applicant: PlayNitride Display Co., Ltd.Inventors: Bo-Wei Wu, Yu-Yun Lo, Chien-Chen Kuo, Chang-Feng Tsai, Tzu-Yang Lin
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Publication number: 20240079536Abstract: A display device includes a first substrate, a plurality of light-emitting diodes, a first wavelength conversion layer and a metasurface. The light-emitting diodes are arranged on the first substrate, in which the light-emitting diodes emit a first color light, and the light-emitting diodes includes a first light-emitting diode, a second light-emitting diode and a third light-emitting diode. The first wavelength conversion layer is on the first light-emitting diode, and configured to convert the first color light emitted from the first light-emitting diode into a second color light, in which the second color light is different from the first color light. The metasurface is above the first wavelength conversion layer, and configured to reflect the first color light and pass the second color light.Type: ApplicationFiled: August 14, 2023Publication date: March 7, 2024Inventors: Yu-Heng HONG, Shih-Chen CHEN, Hao-Chung KUO
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Patent number: 11863916Abstract: A color correction method is applied to an image correction apparatus having an image sensor, and includes searching a color deviation area within a detection image, analyzing the detection image to estimate a correction color value of the color deviation area, and calibrating the color deviation area by the correction color value to generate a calibrated detection image without color deviation.Type: GrantFiled: January 27, 2022Date of Patent: January 2, 2024Assignee: ALTEK SEMICONDUCTOR CORPORATIONInventors: Yu-Chen Kuo, Po-Han Tseng, Kuo-Ming Lai
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Publication number: 20230239444Abstract: A color correction method is applied to an image correction apparatus having an image sensor, and includes searching a color deviation area within a detection image, analyzing the detection image to estimate a correction color value of the color deviation area, and calibrating the color deviation area by the correction color value to generate a calibrated detection image without color deviation.Type: ApplicationFiled: January 27, 2022Publication date: July 27, 2023Applicant: ALTEK SEMICONDUCTOR CORPORATIONInventors: Yu-Chen Kuo, Po-Han Tseng, Kuo-Ming Lai
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Publication number: 20230237626Abstract: An image calibration method applied to a wide-angle image and executed by an image calibration apparatus includes applying primary lens distortion correction for the wide-angle image to generate a corrected image, segmenting an foreground image from the corrected image to generate a background image, applying secondary distortion correction for the foreground image based on the pre-defined object to generate a calibrated foreground image, fusing the background image with the calibrated foreground image to generate a fused image, detecting at least one residual empty pixel not overlapped by the calibrated foreground image within the fused image, and utilizing a machine learning algorithm to fill the at least one residual empty pixel of the fused image by extending the background image to provide an output image. The foreground image contains feature pixels relate to a pre-defined object and the background image has empty pixels corresponding to the foreground image.Type: ApplicationFiled: January 27, 2022Publication date: July 27, 2023Applicant: ALTEK SEMICONDUCTOR CORPORATIONInventors: Yu-Chen Kuo, Yu-Ting Lin, Kuo-Chang Chen
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Patent number: 11508877Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.Type: GrantFiled: March 23, 2020Date of Patent: November 22, 2022Assignee: Genesis Photonics Inc.Inventors: Tung-Lin Chuang, Yi-Ru Huang, Yu-Chen Kuo, Chih-Ming Shen, Tsung-Syun Huang, Jing-En Huang
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Patent number: 11393955Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ?10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.Type: GrantFiled: December 6, 2019Date of Patent: July 19, 2022Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Kai-Shun Kang, Tung-Lin Chuang, Yu-Chen Kuo, Yan-Ting Lan, Chih-Ming Shen, Jing-En Huang
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Patent number: 11342488Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.Type: GrantFiled: August 5, 2019Date of Patent: May 24, 2022Assignee: Genesis Photonics Inc.Inventors: Tung-Lin Chuang, Yi-Ru Huang, Yu-Chen Kuo, Yan-Ting Lan, Chih-Ming Shen, Jing-En Huang
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Patent number: 11322973Abstract: A power device and an operating method thereof are provided. The power device comprises a communication interface and a control circuit. The control circuit is configured to connect a network through the communication interface, and to execute a web server program to provide a web-based user interface. The web-based user interface is configured to provide a plurality of web pages, and the web pages are configured to present a plurality of different related information of the power device. The web-based user interface is further configured to provide a virtual button. When the control circuit determines that the virtual button is clicked once, the control circuit collects the related information from different addresses corresponding to the related information in a memory space, and packages the collected related information as a single file, so as to perform a follow-up process on this single file.Type: GrantFiled: April 7, 2020Date of Patent: May 3, 2022Assignee: CYBER POWER SYSTEMS, INC.Inventors: Hung-Chun Chien, Yung-Hao Peng, Yu-Chen Kuo, Shang-Hsiu Yang
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Publication number: 20210091594Abstract: A power device and an operating method thereof are provided. The power device comprises a communication interface and a control circuit. The control circuit is configured to connect a network through the communication interface, and to execute a web server program to provide a web-based user interface. The web-based user interface is configured to provide a plurality of web pages, and the web pages are configured to present a plurality of different related information of the power device. The web-based user interface is further configured to provide a virtual button. When the control circuit determines that the virtual button is clicked once, the control circuit collects the related information from different addresses corresponding to the related information in a memory space, and packages the collected related information as a single file, so as to perform a follow-up process on this single file.Type: ApplicationFiled: April 7, 2020Publication date: March 25, 2021Inventors: HUNG-CHUN CHIEN, YUNG-HAO PENG, YU-CHEN KUO, SHANG-HSIU YANG
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Publication number: 20200357955Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.Type: ApplicationFiled: March 23, 2020Publication date: November 12, 2020Applicant: Genesis Photonics Inc.Inventors: Tung-Lin Chuang, Yi-Ru Huang, Yu-Chen Kuo, Chih-Ming Shen, Tsung-Syun Huang, Jing-En Huang
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Publication number: 20200274027Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer.Type: ApplicationFiled: February 17, 2020Publication date: August 27, 2020Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Yu-Chen Kuo, Sheng-Tsung Hsu, Chih-Ming Shen, Yao-Tang Li, Tung-Lin Chuang, Tsung-Syun Huang, Jing-En Huang
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Publication number: 20200220050Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ?10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.Type: ApplicationFiled: December 6, 2019Publication date: July 9, 2020Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Kai-Shun Kang, Tung-Lin Chuang, Yu-Chen Kuo, Yan-Ting Lan, Chih-Ming Shen, Jing-En Huang
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Patent number: 10606291Abstract: A power output control module for power distribution is installed inside a power distributor that is connected to an AC power source and multiple electronic devices to control the AC power outputted to the electronic devices. The power output control module continuously detects whether the AC power inputted is normal. When the AC power source is disconnected by accident, a latch relay is controlled to switch to be open, so that the AC power source and the electronic devices are disconnected. This prevents the instantaneous surge current from damaging the electronic devices when the AC power source resumes its normal output and also increases the safety and reliability of electronic devices.Type: GrantFiled: July 6, 2017Date of Patent: March 31, 2020Assignee: CYBER POWER SYSTEMS INC.Inventors: Hung-Ming Hsieh, Yung-Hao Peng, Yu-Chen Kuo
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Publication number: 20200075821Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.Type: ApplicationFiled: August 5, 2019Publication date: March 5, 2020Applicant: Genesis Photonics Inc.Inventors: Tung-Lin Chuang, Yi-Ru Huang, Yu-Chen Kuo, Yan-Ting Lan, Chih-Ming Shen, Jing-En Huang
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Publication number: 20190312176Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.Type: ApplicationFiled: June 17, 2019Publication date: October 10, 2019Applicant: Genesis Photonics Inc.Inventors: Tsung-Syun Huang, Jing-En Huang, Yu-Chen Kuo, Yan-Ting Lan, Kai-Shun Kang, Fei-Lung Lu, Teng-Hsien Lai, Yi-Ru Huang