Abstract: The present invention claims and discloses a growth surface for cell and/or tissue culturing and its method of making thereof. More specifically, the instant invention claims and discloses a novel growth surface for culturing cells that maximizes growth surface, cell attachment, even distribution of nutrients and air to cells and providing a second chance for the unattached and/or dislodged cells for re-attachment by physically manipulating the growth surface into a geometric configuration, while compatible to be used in conjunction with any conventional cultivating system. The growth surface of the present invention can optionally have trimmed or folded ends to increase fluid movement thus increasing production of cellular product.

Abstract: A novel method of forming a GaAs-based MOS structure comprises ion implantation after oxide formation, and subsequent slow heating and cooling, carried out such that essentially no interfacial defects that are detectable by high resolution transmission electron microscopy are formed. If the MOS structure is a MOS-FET then metal contacts are provided in conventional fashion. A post-metallization anneal can result in FETs that are substantially free of drain current/voltage hysteresis. MOS-FETs made according to the novel method can be produced with high yield and can have significantly increased lifetime, as compared to some prior art GaAs-based MOS-FETs.

Abstract: The present invention provides a method and apparatus for producing a crosslinked foamed article. Such a method comprises the steps of: (a) uniformly mixing at least one crosslinkable resin, at least one crosslinking agent, at least one foaming agent, and some additives into a resin composition; (b) extruding the resin composition through a die into an extrudate of a predetermined shape; and (c) heating the extrudate to a temperature sufficient to cause crosslinking and foaming of the crosslinkable resin while being driven by a driving device to move in the extruding direction, thereby obtaining a crosslinked foamed article. By means of the present invention, the resin extrudate can progress smoothly through the heater or the mold.

Abstract: In a method of making a flip-chip bonded GaAs-based opto-electronic device, removal of the GaAs substrate is facilitated by provision of a lattice matched (Al.sub.x Ga.sub.1-x)InP etch stop layer, exemplarily a Ga.sub.0.51 In.sub.0.49 P layer, and use of an etchant that isotropically etches GaAs such that an essentially mirror-like etch stop layer surface results, and that preferably exhibits an etch rate ratio of at least 200:1 for GaAs and the etch stop layer, respectively. Use of the novel substrate removal method can substantially increase device yield, and facilitate manufacture of large device arrays, e.g., arrays of detector/modulator diodes flip-chip bonded to Si CMOS chips.

Abstract: In a DH-PHEMT the channel layer comprises InGaAs and the donor layers comprise In.sub.0.5-q (Al.sub.x Ga.sub.1-x).sub.0.5+q P in which the mole fraction of Al is in the range of about 0.2.ltoreq.x.ltoreq.0.3. In another embodiment, an InAlGaP layer forms a Schottky barrier gate contact with a barrier height of about 1.0 eV and hence low leakage current. The devices exhibit high 2DEG density, current drivability, and breakdown voltage, making them suitable for low voltage application such as battery-powered, portable wireless equipment. The Schottky barrier contact may be used in devices other than HEMTs.

Abstract: In a DH-PHEMT the channel layer comprises InGaAs, the donor layers comprise In.sub.y Ga.sub.1-y P(0.15.ltoreq.y.ltoreq.0.85), and each of the spacer layers comprises an In.sub.0.5-q (Al.sub.x Ga.sub.1-x).sub.0.5+q P outer spacer layer (0.2.ltoreq.x) and an Al.sub.r Ga.sub.1-r As (0.ltoreq.r.ltoreq.0.3) inner spacer layer. In another embodiment, a similar InAlGaP layer forms a Schottky barrier gate contact with a barrier height of at least 1.0 eV and hence low leakage current. The devices exhibit the capability for both low noise and high power operation at low supply voltages.