Abstract: A handheld apparatus, a control method thereof of a presenting mode and a computer-readable recording medium are provided. The handheld apparatus includes at least one first sensor, a second sensor, a screen and a processor. The first sensor is disposed on the handheld apparatus. The second sensor detects orientation. The handheld apparatus has an auto-rotate screen function of automatically adjusting a presenting mode of the screen to a portrait mode or a landscape mode according to the orientation. The processor determines whether the handheld apparatus is in a hold state according to sensing data of the first sensor. In response to determining that the handheld apparatus is in the hold state, the processor locks the presenting mode according to the presenting mode currently performed by the handheld apparatus without adjusting the presenting mode according to the auto-rotate screen function. Accordingly, a convenient operation of the presenting mode is provided.

Abstract: A universal jig is provided for clamping wind turbine blades. The jig has a rectangle-like shape forming a space for clamping a blade at the blade root or the blade body. The jig comprises a set of vertically-moving parts; a set of horizontally-moving parts; a plurality of adjusted pads; and a plurality of positioning parts. The vertically-moving parts comprise two upper connecting posts and two lower connecting posts sheathed with each other separately to form two length sides of the jig. The horizontally-moving parts comprise two left connecting posts and two right connecting posts. The adjusted pads are locked on the left and the right connecting posts. The positioning parts are locked at the upper and the lower connecting posts of the length sides of the jig and are locked at the left and the right connecting posts of the width sides of the jig.

Abstract: A method of fabricating semiconductor device includes forming a plurality of gate structures on a semiconductor substrate. A first inter layer dielectric layer is deposited on the gate structures. A first contact plug is formed in the first inter layer dielectric layer in between every two immediately adjacent gate structures. An etch stop layer is deposited on the first inter layer dielectric layer. A second inter layer dielectric layer is deposited on the first inter layer dielectric layer. A second contact plug is formed in the second inter layer dielectric layer aligning with the first contact plug. A metal layer is deposited overlying the second inter layer dielectric layer and the second contact plug.

Abstract: A vertical axis wind turbine having a varying length of a rotational diameter includes a plurality of vertical blades connected to a central shaft of a generator, the plurality of blades being provided at equal intervals on the outer circumference side of the central shaft, and each of the blades is provided with at least one support shaft member extending towards the central shaft, and in between each of the support shaft member and the central shaft is provided, respectively, with an elastic telescopic assembly, and each of the elastic telescopic assemblies is respectively driven by the centrifugal force of the blades above a rated speed to drive the support shaft member to extend outwardly, so that the rotation radius of each blade from the central shaft increases as the rotational speed increases.

Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first plasma etching process on a substrate to form a first trench in the substrate. The method includes removing a second portion of the substrate under the bottom surface to form a second trench under and connected to the first trench. The second trench surrounds a third portion of the substrate under the first portion. The third portion has a first sidewall. The first sidewall is inclined relative to the top surface at a second angle, and the first angle is greater than the second angle. The method includes forming an isolation structure in the first trench and the second trench. The method includes forming a gate insulating layer over the top surface and the first inclined surface. The method includes forming a gate over the gate insulating layer and the isolation structure.

Abstract: A flash memory cell structure includes a semiconductor substrate, a pad dielectric layer, a floating gate, a control gate, and a blocking layer. The pad dielectric layer is disposed on the semiconductor substrate. The floating gate is disposed over the pad dielectric layer, in which the floating gate has a top surface opposite to the pad dielectric layer, and the top surface includes at least one recess formed thereon. The control gate is disposed over the top surface of the floating gate. The blocking layer is disposed between the floating gate and the control gate.

Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first plasma etching process on a substrate to form a first trench in the substrate. The method includes removing a second portion of the substrate under the bottom surface to form a second trench under and connected to the first trench. The second trench surrounds a third portion of the substrate under the first portion. The third portion has a first sidewall. The first sidewall is inclined relative to the top surface at a second angle, and the first angle is greater than the second angle. The method includes forming an isolation structure in the first trench and the second trench. The method includes forming a gate insulating layer over the top surface and the first inclined surface. The method includes forming a gate over the gate insulating layer and the isolation structure.

Abstract: A flash memory cell structure includes a semiconductor substrate, a pad dielectric layer, a floating gate, a control gate, and a blocking layer. The pad dielectric layer is disposed on the semiconductor substrate. The floating gate is disposed over the pad dielectric layer, in which the floating gate has a top surface opposite to the pad dielectric layer, and the top surface includes at least one recess formed thereon. The control gate is disposed over the top surface of the floating gate. The blocking layer is disposed between the floating gate and the control gate.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a trench surrounding an active island of the substrate. The active island has a top surface, a sidewall, and an inclined surface connecting the top surface to the sidewall. The inclined surface is inclined relative to the top surface at a first angle. The sidewall is inclined relative to the top surface at a second angle. The first angle is greater than the second angle. The semiconductor device structure includes an isolation structure in the trench. The semiconductor device structure includes a gate insulating layer over the top surface and the inclined surface. The semiconductor device structure includes a gate over the gate insulating layer and the isolation structure. The gate crosses the active island.

Abstract: A semiconductor device includes a substrate, a tunneling oxide layer, a floating gate, an isolation layer and a control gate. The tunneling oxide layer is disposed on the substrate. The floating gate is disposed on the tunneling oxide layer. The isolation layer covers a top of the floating gate and peripherally encloses the tunneling oxide layer and the floating gate. The control gate is disposed over a top of the isolation layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a trench surrounding an active island of the substrate. The active island has a top surface, a sidewall, and an inclined surface connecting the top surface to the sidewall. The inclined surface is inclined relative to the top surface at a first angle. The sidewall is inclined relative to the top surface at a second angle. The first angle is greater than the second angle. The semiconductor device structure includes an isolation structure in the trench. The semiconductor device structure includes a gate insulating layer over the top surface and the inclined surface. The semiconductor device structure includes a gate over the gate insulating layer and the isolation structure. The gate crosses the active island.

Abstract: A method of fabricating semiconductor device includes forming a plurality of gate structures on a semiconductor substrate. A fist inter layer dielectric layer is deposited on the gate structures. A first contact plug is formed in the first inter layer dielectric layer in between every two immediately adjacent gate structures. An etch stop layer is deposited on the first inter layer dielectric layer. A second inter layer dielectric layer is deposited on the first inter layer dielectric layer. A second contact plug is formed in the second inter layer dielectric layer aligning with the first contact plug. A metal layer is deposited overlying the second inter layer dielectric layer and the second contact plug.

Abstract: A cold cathode fluorescent lamp lighting device includes a light guiding cover having a recess, a cold cathode fluorescent lamp disposed in the recess, and a covering member fitted on the recess of the light guiding cover. The cold cathode fluorescent lamp is provided with at least a cushion. The surface of the covering member is coated with viscose to secure the covering member to the light guiding cover. The cushion and viscose provide dual shock absorption, preventing the cold cathode fluorescent lamp from cracking because of collision.

Abstract: A vehicular light emitting diode connector includes an outer case, an inner case, a first signal wire, and a second signal wire. The outer case comprises an open end and a compartment. The inner case is inserted into the compartment of the outer case and has a through hole therein to form a first open end and a second open end. The first signal wire is secured to the inner wall of the first open end of the inner case, and the second signal wire is secured to the outer case.

Abstract: A connector structure for a vehicular light includes a connecting base. The connecting base has a compartment at one end and an insertion section at the opposite end thereof. The insertion section is disposed with holes interconnecting with the compartment. The compartment is provided with electric wires which extend through the holes and connect with electric contact points. The insertion section of the connecting base is inserted into a light base of a vehicular light for lighting up lighting elements.

Abstract: A LED vehicle light having a current consuming device includes a lighting fixture and an electric heating circuit pad. The lighting fixture comprises a connecting terminal and a light emitting diode (LED) module. The LED module is connected to the connecting terminal. The electric heating circuit pad is connected to the connecting terminal to increase the current consuming of the lighting fixture so as to prevent misjudgment of a vehicular computer.

Abstract: A vehicular light emitting diode connector includes an outer case, an inner case, a first signal wire, and a second signal wire. The outer case comprises an open end and a compartment. The inner case is inserted into the compartment of the outer case and has a through hole therein to form a first open end and a second open end. The first signal wire is secured to the inner wall of the first open end of the inner case, and the second signal wire is secured to the outer case.

Abstract: A cold cathode fluorescent lamp lighting device includes a lens cover, a cold cathode fluorescent lamp and a control box. The lens cover is a semicircular-shaped tube and includes a post having a threaded hole for insertion of a bolt. The cold cathode fluorescent lamp is circular and secured in the lens cover. The control box includes a control circuit to control the lighting of the cold cathode fluorescent lamp. The control box further comprises electric wires and a connector to be connected with a connector of the cold cathode fluorescent lamp.