Abstract: A semiconductor structure includes a first dielectric layer over a first conductive line and a second conductive line, a high resistance layer over a portion of the first dielectric layer, a low-k dielectric layer over the second dielectric layer, a second dielectric layer on the high resistance layer, a first conductive via extending through the low-k dielectric layer and the second dielectric layer, and a second conductive via extending through the low-k dielectric layer and the first dielectric layer to the first conductive line. The first conductive via extends into the high resistance layer.

Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

Abstract: The present disclosure relates to methods of processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The chemical vapor deposition chamber includes a spindle mechanism that cooperates with one or more carrier ring forks to move the semiconductor substrate from one station to another station. The methods include monitoring one or more spindle operation parameters and carrying out one or more maintenance steps on the spindle mechanism based on the results of monitoring the one or more spindle operation parameters. The monitored spindle operation parameters provide an indication of undesirable vibration of the semiconductor substrates in the processing chamber. The vibration of the semiconductor substrates in the processing chamber is undesirable because it promotes generation of unwanted particles that deposit onto a surface of the semiconductor substrate.

Abstract: A carton with a detachable buffer plate set includes a bottom plate, two long side plates, an upper cover, two short side plates, two reinforcing side plates, and a detachable buffer plate set. The long side plates and the short side plates are connected to the bottom plate. The upper cover is connected to one of the long side plates. The two reinforcing side plates are connected to the two short side plates respectively. The detachable buffer plate set is detachably connected to one of the reinforcing side plates. Accordingly, by detaching the detachable buffer plate set for supporting and buffering, products of similar size or products with accessories of different sizes may use the same-sized cartons and paper-plastic boxes, so that extra die-cutting costs and storage costs are avoided.

Abstract: An electro-acoustical transducer device is disclosed, which includes: a hollow disk body that generally defines an axis of propagation, the hollow disk body comprising: a pair of plate members extending substantially perpendicular to the axis of propagation, each provided with a central transmitting port arranged about the axis of propagation, and a peripheral enclosure jointing the pair of plate members at the respective outer edge portions thereof, thereby defining a chamber of resonance between the pair of plate members; wherein a ring-opening about the axis of propagation that enables access to the chamber of resonance is formed between the central transmitting ports of the plate members.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; and forming a buffer layer adjacent to the gate structure. Preferably, the buffer layer includes a crescent moon shape and the buffer layer includes an inner curve, an outer curve, and a planar surface connecting the inner curve and an outer curve along a top surface of the substrate, in which the planar surface directly contacts the outer curve on an outer sidewall of the spacer.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: The present disclosure provides a semiconductor manufacturing method and a system therefore. The semiconductor manufacturing method includes: providing a gas from a container through an outlet to a semiconductor wafer manufacturing equipment, wherein a control valve is connected to the outlet to control a gas flow; retrieving a set of parameters corresponding to the gas flow; and determining a nominal position of the control valve by incorporating the set of parameters through a processor in order to provide a desired flow passage into the semiconductor wafer manufacturing equipment, wherein the semiconductor wafer manufacturing equipment includes a plurality of independent reaction chambers, wherein each reaction chamber is individually supplied with a gas pipe, and each gas pipe receives the gas from the container.

Abstract: A semiconductor structure includes a first dielectric layer over a first conductive line and a second conductive line, a high resistance layer over a portion of the first dielectric layer, a second dielectric layer on the high resistance layer, a low-k dielectric layer over the second dielectric layer, a first conductive via extending through the low-k dielectric layer and the second dielectric layer, and a second conductive via extending through the low-k dielectric layer and the first dielectric layer to the first conductive line. The first conductive via extends into the high resistance layer.

Abstract: Systems and methods are disclosed related to determining and providing contextual information associated with a meeting based in part by parsing text from a meeting invitation or calendar entry. A voice-capturing device may receive audio data before or during a meeting that includes an invocation phrase used to invoke a voice-based functionality. A response may be generated by the voice-capturing device or an associated service provider system based on the contextual information determined from the parsed meeting invitation and/or related sources.

Abstract: A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a sensor configured to generate sensor signals indicative of a lifetime of a component of the thin-film deposition system, a characteristic of a thin-film deposited by the thin-film deposition system or a characteristic of a process material that flows into the thin-film deposition system. The system includes a control system configured to adjust a relative location of a top plate of the thin-film deposition system with respect to a location of a wafer in the thin-film deposition system during the thin-film deposition process responsive to the sensor signals.

Abstract: A quantum flow cytometer for detecting an analyte with photon-number statistics includes: a flow cytometer that: receives a pump light in a first direction; receives an analyte flow comprising the analyte in a second direction; and produces scattered light from scattering the pump light by the analyte; a single photon detector in optical communication with the flow cytometer and that: receives, in a third direction, the scattered light from the flow cytometer; provides a correlative time-of-arrival waveform comprising photon-number statistics as an amplitude and an integrated area, the integrated area being proportional to a number of photons received by the single photon detector, wherein the first direction, the second direction, and the third direction are arranged at oblique angles.

Abstract: A method (of generating a layout diagram) includes identifying, in the layout diagram, a group of three or more cells arranged so as to exhibit two or more edge-pairs (EPs) that are edge-wise abutted relative to a first direction. The method further includes, for each of at least one but fewer than all of the three or more cells, selectively moving a given one of cells corresponding to one of the members of the corresponding EP resulting in at least a minimum gap in the first direction between the members of the corresponding EP.

Abstract: An apparatus and method for wavelength conversion of a signal, for example, a dual-polarization signal, is disclosed. The apparatus implements a single-loop counter-propagating wavelength conversion scheme which provides both up-conversion and down-conversion of the signal within the same loop. Nonlinear wavelength conversion devices in the loop provide both up-conversion and down-conversion of the polarization components of the signal within the loop depending on whether the polarization component travels through the nonlinear conversion device in a clockwise or a counter-clockwise direction. The wavelength-converted signal is available to be extracted from the wavelength-conversion loop. An all-optical wavelength-division multiplexing transponder based on the wavelength-conversion scheme is also disclosed.

Abstract: A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a sensor configured to generate sensor signals indicative of a lifetime of a component of the thin-film deposition system, a characteristic of a thin-film deposited by the thin-film deposition system or a characteristic of a process material that flows into the thin-film deposition system. The system includes a control system configured to adjust a relative location of a top plate of the thin-film deposition system with respect to a location of a wafer in the thin-film deposition system during the thin-film deposition process responsive to the sensor signals.

Abstract: The present disclosure relates to methods of processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The chemical vapor deposition chamber includes a spindle mechanism that cooperates with one or more carrier ring forks to move the semiconductor substrate from one station to another station. The methods include monitoring one or more spindle operation parameters and carrying out one or more maintenance steps on the spindle mechanism based on the results of monitoring the one or more spindle operation parameters. The monitored spindle operation parameters provide an indication of undesirable vibration of the semiconductor substrates in the processing chamber. The vibration of the semiconductor substrates in the processing chamber is undesirable because it promotes generation of unwanted particles that deposit onto a surface of the semiconductor substrate.

Abstract: An apparatus and method for wavelength conversion of a signal, for example, a dual-polarization signal, is disclosed. The apparatus implements a single-loop counter-propagating wavelength conversion scheme which provides both up-conversion and down-conversion of the signal within the same loop. Nonlinear wavelength conversion devices in the loop provide both up-conversion and down-conversion of the polarization components of the signal within the loop depending on whether the polarization component travels through the nonlinear conversion device in a clockwise or a counter-clockwise direction. The wavelength-converted signal is available to be extracted from the wavelength-conversion loop. An all-optical wavelength-division multiplexing transponder based on the wavelength-conversion scheme is also disclosed.

Abstract: A method for predicting and compensating frictions of a feed system includes following steps: constantly obtaining current signals and angle-position signals of a motor by a motor driver of a feed system after being activated; calculating frictions of the motor upon each rotating position according to the obtained current signals and angle-position signals and generating multiple records of friction data; creating a friction model according to the multiple records of friction data and the angle-position signals each respectively corresponding to each record of friction data with respect to each rotating position; importing current angle-position signal of the motor to the friction model for predicting a predicted friction; calculating a compensation current based on the predicted friction; and, controlling the motor driver to additionally provide the compensation current to the motor for conquering an upcoming friction of the feed system approximate to the predicted friction.

Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.