Patents by Inventor Yu-Hsiang Hu

Yu-Hsiang Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Package structure and method of forming the same
    Patent number: 11594472
    Abstract: A package structure and method of forming the same are provided. The package structure includes a die, a via, an encapsulant, an adhesion promoter layer, and a polymer layer. The via is laterally aside the die. The encapsulant laterally encapsulates the die and the via. The adhesion promoter layer is sandwiched between the via and the encapsulant. The encapsulant comprises a portion aside the via and under the adhesion promoter layer, and the portion of the encapsulant is sandwiched between the adhesion promoter layer and the polymer layer.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: February 28, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Chun Cho, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao, Wei-Chih Chen
  • PACKAGE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20230013491
    Abstract: A package including a device die and an encapsulant is provided. The device die includes a semiconductor substrate, an interconnect structure, a conductive via, and a dielectric layer. The interconnect structure is disposed over the semiconductor substrate. The conductive via is disposed over and electrically coupled to the interconnect structure. The dielectric layer is disposed over the interconnect structure and laterally encapsulating the conductive via, wherein the dielectric layer includes a sidewall and a bottom surface facing the interconnect structure, and the sidewall of the dielectric layer is tilted with respect to the bottom surface of the dielectric layer. The encapsulant laterally encapsulates the device die.
    Type: Application
    Filed: July 16, 2021
    Publication date: January 19, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Che Tu, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
  • SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
    Publication number: 20230018511
    Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.
    Type: Application
    Filed: July 16, 2021
    Publication date: January 19, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Ming Weng, Chen-Hua Yu, Chung-Shi Liu, Hao-Yi Tsai, Cheng-Chieh Hsieh, Hung-Yi Kuo, Tsung-Yuan Yu, Hua-Kuei Lin, Hsiu-Jen Lin, Ming-Che Ho, Yu-Hsiang Hu, Chewn-Pu Jou, Cheng-Tse Tang
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20220415737
    Abstract: A semiconductor device includes semiconductor dies and a redistribution structure. The semiconductor dies are encapsulated in an encapsulant. The redistribution structure extends on the encapsulant and electrically connects the semiconductor dies. The redistribution structure includes dielectric layers and redistribution conductive layers alternately stacked. An outermost dielectric layer of the dielectric layers further away from the semiconductor dies is made of a first material. A first dielectric layer of the dielectric layers on which the outermost dielectric layer extends is made of a second material different from the first material. The first material includes at least one material selected from the group consisting of an epoxy resin, a phenolic resin, a polybenzooxazole, and a polyimide having a curing temperature lower than 250° C.
    Type: Application
    Filed: June 25, 2021
    Publication date: December 29, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Chieh Wu, Ting Hao Kuo, Kuo-Lung Pan, Po-Yuan Teng, Yu-Chia Lai, Shu-Rong Chun, Mao-Yen Chang, Wei-Kang Hsieh, Pavithra Sriram, Hao-Yi Tsai, Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
  • Semiconductor package
    Patent number: 11532531
    Abstract: A semiconductor package including a semiconductor die, an encapsulant, an electrical connector, a conductive pad and an inter-dielectric layer is provided. The encapsulant encapsulates the semiconductor die. The electrical connector is disposed over the semiconductor die. The conductive pad contacts the electrical connector and is disposed between the semiconductor die and the electrical connector. The inter-dielectric layer is disposed over the semiconductor die, wherein the inter-dielectric layer comprises an opening, and a portion of the opening is occupied by the conductive pad and the electrical connector.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Han Wang, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao
  • Planarizing RDLS in RDL-first processes through CMP process
    Patent number: 11532540
    Abstract: A method includes forming a buffer dielectric layer over a carrier, and forming a first dielectric layer and a first redistribution line over the buffer dielectric layer. The first redistribution line is in the first dielectric layer. The method further includes performing a planarization on the first dielectric layer to level a top surface of the first dielectric layer, forming a metal post over and electrically coupling to the first redistribution line, and encapsulating the metal post in an encapsulating material. The encapsulating material contacts a top surface of the planarized top surface of the first dielectric layer.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo, Chen-Hua Yu
  • SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME
    Publication number: 20220392872
    Abstract: A semiconductor package includes a semiconductor die and a redistribution structure. The semiconductor die is laterally surrounded by a molding compound, and the semiconductor die has a conductive pillar and a complex compound sheath sandwiched between the conductive pillar and the molding compound. The redistribution structure is electrically connected with the semiconductor die and comprises a first via portion at a first side of the redistribution structure and a second via portion at a second side of the redistribution structure, and a base angle of the second via portion is greater than a base angle of the first via portion.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 8, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chih Chen, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao, Hung-Chun Cho
  • Sensor Package and Method
    Publication number: 20220384333
    Abstract: A device includes a sensor die having a sensing region at a top surface of the sensor die, an encapsulant at least laterally encapsulating the sensor die, a conductive via extending through the encapsulant, and a front-side redistribution structure on the encapsulant and on the top surface of the sensor die, wherein the front-side redistribution structure is connected to the conductive via and the sensor die, wherein an opening in the front-side redistribution structure exposes the sensing region of the sensor die, and wherein the front-side redistribution structure includes a first dielectric layer extending over the encapsulant and the top surface of the sensor die, a metallization pattern on the first dielectric layer, and a second dielectric layer extending over the metallization pattern and the first dielectric layer.
    Type: Application
    Filed: July 26, 2022
    Publication date: December 1, 2022
    Inventors: Yung-Chi Chu, Sih-Hao Liao, Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
  • Semiconductor Device and Method of Manufacture
    Publication number: 20220382150
    Abstract: A method of manufacturing a semiconductor device includes forming a polymer mixture over a substrate, curing the polymer mixture to form a polymer material, and patterning the polymer material. The polymer mixture includes a polymer precursor, a photosensitizer, a cross-linker, and a solvent. The polymer precursor may be a polyamic acid ester. The cross-linker may be tetraethylene glycol dimethacrylate. The photosensitizer includes 4-phenyl-2-(piperazin-1-yl)thiazole. The mixture may further include an additive.
    Type: Application
    Filed: July 21, 2022
    Publication date: December 1, 2022
    Inventors: Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo, Chen-Hua Yu
  • OPTICAL INTERCONNECT STRUCTURE, PACKAGE STRUCTURE AND FABRICATING METHOD THEREOF
    Publication number: 20220382004
    Abstract: An optical interconnect structure including a base substrate, an optical waveguide, a first reflector, a second reflector, a dielectric layer, a first lens, and a second lens is provided. The optical waveguide is embedded in the base substrate. The optical waveguide includes a first end portion and a second end portion opposite to the first end portion. The first reflector is disposed between the base substrate and the first end portion of the optical waveguide. The second reflector is disposed between the base substrate and the second end portion of the optical waveguide. The dielectric layer covers the base substrate and the optical waveguide. The first lens is disposed on the dielectric layer and located above the first end portion of the optical waveguide. The second lens is disposed on the dielectric layer and located above the second end portion of the optical waveguide.
    Type: Application
    Filed: May 27, 2021
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Ming Weng, Chen-Hua Yu, Chung-Shi Liu, Hao-Yi Tsai, Cheng-Chieh Hsieh, Hung-Yi Kuo, Tsung-Yuan Yu, Hua-Kuei Lin, Yu-Hsiang Hu, Chewn-Pu Jou, Feng-Wei Kuo
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20220367349
    Abstract: A semiconductor device including a semiconductor die, an encapsulant and a redistribution structure is provided. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the semiconductor die and the encapsulant and is electrically connected to the semiconductor die. The redistribution structure includes a dielectric layer, a conductive via in the dielectric layer and a redistribution wiring covering the conductive via and a portion of the dielectric layer. The conductive via includes a pillar portion embedded in the dielectric layer and a protruding portion protruding from the pillar portion, wherein the protruding portion has a tapered sidewall.
    Type: Application
    Filed: July 29, 2022
    Publication date: November 17, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sih-Hao Liao, Hung-Jui Kuo, Yu-Hsiang Hu
  • PACKAGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20220359446
    Abstract: A package structure includes a semiconductor die, conductive pillars, an insulating encapsulation, a redistribution circuit structure, and a solder resist layer. The conductive pillars are arranged aside of the semiconductor die. The insulating encapsulation encapsulates the semiconductor die and the conductive pillars, and the insulating encapsulation has a first surface and a second surface opposite to the first surface. The redistribution circuit structure is located on the first surface of the insulating encapsulation. The solder resist layer is located on the second surface of the insulating encapsulation, wherein a material of the solder resist layer includes a filler.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Chen Tseng, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao
  • PACKAGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20220336310
    Abstract: A package structure includes a semiconductor die, an insulating encapsulation, a first redistribution circuit structure and a surface-modifying film. The semiconductor die has conductive terminals. The insulating encapsulation laterally encapsulates the semiconductor die and exposes the conductive terminals. The first redistribution circuit structure is located over the insulating encapsulation and electrically connected to the semiconductor die. The surface-modifying film is located on the insulating encapsulation and has a plurality of openings exposing edges of the conductive terminals, wherein the surface-modifying film separates the first redistribution circuit structure from the insulating encapsulation.
    Type: Application
    Filed: July 4, 2022
    Publication date: October 20, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chih Chen, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao, Hung-Chun Cho
  • PACKAGE STRUCTURE COMPRISING BUFFER LAYER FOR REDUCING THERMAL STRESS AND METHOD OF FORMING THE SAME
    Publication number: 20220328372
    Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.
    Type: Application
    Filed: June 27, 2022
    Publication date: October 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chih Chen, Chien-Hsun Lee, Chung-Shi Liu, Hao-Cheng Hou, Hung-Jui Kuo, Jung-Wei Cheng, Tsung-Ding Wang, Yu-Hsiang Hu, Sih-Hao Liao
  • SEMICONDUCTOR PACKAGE AND METHOD OF FORMING SAME
    Publication number: 20220310467
    Abstract: A package and a method forming the same are provided. The package includes an integrated circuit die. A sidewall of the integrated circuit die has a first facet and a second facet. The first facet and the second facet have different slopes. The package includes an encapsulant surrounding the integrated circuit die and in physical contact with the first facet and the second facet and an insulating layer over the integrated circuit die and the encapsulant. An upper surface of the integrated circuit die is lower than an upper surface of the encapsulant. A sidewall of the insulating layer is substantially coplanar with the first facet.
    Type: Application
    Filed: May 28, 2021
    Publication date: September 29, 2022
    Inventors: Ting-Chen Tseng, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
  • Semiconductor device and method of manufacture
    Patent number: 11454888
    Abstract: A method of manufacturing a semiconductor device includes forming a polymer mixture over a substrate, curing the polymer mixture to form a polymer material, and patterning the polymer material. The polymer mixture includes a polymer precursor, a photosensitizer, a cross-linker, and a solvent. The polymer precursor may be a polyamic acid ester. The cross-linker may be tetraethylene glycol dimethacrylate. The photosensitizer includes 4-phenyl-2-(piperazin-1-yl)thiazole. The mixture may further include an additive.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: September 27, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo, Chen-Hua Yu
  • Semiconductor package and method of forming the same
    Patent number: 11456280
    Abstract: A semiconductor package includes a first die, a second die, a molding compound and a redistribution structure. The first die has a first conductive pillar and a first complex compound sheath surrounding and covering a sidewall of the first conductive pillar. The second die has a second conductive pillar and a protection layer laterally surrounding the second conductive pillar. The molding compound laterally surrounds and wraps around the first and second dies, and is in contact with the first complex compound sheath of the first die. The redistribution structure is disposed on the first and second dies and the molding compound.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: September 27, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chih Chen, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao, Hung-Chun Cho
  • Integrated Circuit Package and Method
    Publication number: 20220302066
    Abstract: In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.
    Type: Application
    Filed: June 4, 2021
    Publication date: September 22, 2022
    Inventors: Hung-Chun Cho, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
  • Semiconductor Device and Methods of Manufacture
    Publication number: 20220302065
    Abstract: In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.
    Type: Application
    Filed: March 19, 2021
    Publication date: September 22, 2022
    Inventors: Hung-Chun Cho, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao
  • Fan-Out Interconnect Structure and Methods Forming the Same
    Publication number: 20220301919
    Abstract: A method includes forming an adhesive layer over a carrier, forming a sacrificial layer over the adhesive layer, forming through-vias over the sacrificial layer, and placing a device die over the sacrificial layer. The Method further includes molding and planarizing the device die and the through-vias, de-bonding the carrier by removing the adhesive layer, and removing the sacrificial layer.
    Type: Application
    Filed: June 6, 2022
    Publication date: September 22, 2022
    Inventors: Yu-Hsiang HU, Chung-Shi LIU, Hung-Jui KUO, Ming-Da CHENG