Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first diffusion barrier layer made of a dielectric material including a metal element, nitrogen, and oxygen and a first protection layer made of a dielectric material including silicon and oxygen and in direct contact with the top surface of the first diffusion barrier layer. The semiconductor device structure also includes a first thickening layer made of a dielectric material including the metal element and oxygen and in direct contact with the top surface of the first protection layer. A maximum metal content in the first thickening layer is greater than that in the first diffusion barrier layer. The semiconductor device structure further includes a conductive feature surrounded by and in direct contact with the first diffusion barrier layer, the first protection layer, and the first thickening layer.

Abstract: An electrostatic dust-sticky cleaning device comprises a handle; a driving element being a hollow rectangular box body; a pull rod being slidable in a slot of the box body; an interior of the box body being installed with a unidirectional gear; a driving belt winding around the unidirectional gear; a spindle of the unidirectional gear rotatably installed to the driving belt; a cleaning unit including a cylinder roller, a friction pad, and a semi-round cover; a second spindle of the roller being assembled to a third lateral side of the box body of the driving element. When the roller rotates, it will rub the surface of the friction pad so that the surface of the roller will generate static electrons. Thereby the accumulate dusts can be assembled to the gap between the semi-round cover and the roller.