Abstract: Semiconductor devices and methods of manufacture are discussed. In an embodiment, a method of manufacturing a semiconductor device includes: forming first nanostructures from a first material over a substrate; forming second nanostructures from a second material different from the first material over the substrate, wherein the first nanostructures and the second nanostructures alternate vertically above the substrate; removing the first nanostructures; after the removing the first nanostructures forming an interposer in between the second nanostructures; after the forming the interposer forming a first source/drain region over the substrate and in direct physical contact with the second nanostructures; and removing the interposer exposing surfaces of each of the second nanostructures.

Abstract: Systems and methods for multi-modal image generation are provided. One or more aspects of the systems and methods includes obtaining a text prompt and layout information indicating a target location for an element of the text prompt within an image to be generated and computing a text feature map including a plurality of values corresponding to the element of the text prompt at pixel locations corresponding to the target location. Then the image is generated based on the text feature map using a diffusion model. The generated image includes the element of the text prompt at the target location.

Abstract: A resin composition including a modified maleimide resin is provided. The modified maleimide resin is formed from a dicyclopentadiene (DCPD)-based resin having an amino group and a maleic anhydride by a condensation polymerization. The dicyclopentadiene-based resin having an amino group is formed by nitration reaction and hydrogenation reaction of dicyclopentadiene phenolic resin.

Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.

Abstract: A phase error compensation circuit and a method for compensating a phase error between a reference clock and a feedback clock are provided. The phase error compensation circuit includes a first programmable delay circuit, a second programmable delay circuit and at least one swapping circuit. The first programmable delay circuit provides a first delay. The second programmable delay circuit provides a second delay. At a present cycle, the first delay is unchanged, wherein the swapping circuit applies the first delay to the feedback clock for generating a compensated feedback clock and applies the second delay to the reference clock for generating a compensated reference clock. At a next cycle, the second delay is unchanged, where the swapping circuit applies the second delay to the feedback clock for generating the compensated feedback clock and applies the first delay to the reference clock for generating the compensated reference clock.

Abstract: One or more computing devices, systems, and/or methods are provided. In an example, a first performance metric score may be determined based upon first content item text. A plurality of similarity scores associated with a plurality of sets of content item text may be determined. One or more sets of content item text may be selected from among the plurality of sets of content item text based upon the plurality of similarity scores and a plurality of performance metric scores associated with the plurality of sets of content item text. The plurality of performance metric scores may comprise one or more performance metric scores associated with the one or more sets of content item text. The one or more performance metric scores may be higher than the first performance metric score. One or more representations of the one or more sets of content item text may be displayed.

Abstract: A method of fabricating a semiconductor structure includes selective use of a cladding layer during the fabrication process to provide critical dimension uniformity. The cladding layer can be formed before forming a recess in an active channel structure or can be formed after filling a recess in an active channel structure with dielectric material. These techniques can be used in semiconductor structures such as gate-all-around (GAA) transistor structures implemented in an integrated circuit.

Abstract: Low noise amplifiers (LNAs) with low noise figure are provided. In certain embodiments, an LNA includes a single-ended LNA stage including an input for receiving a single-ended input signal from an antenna and an output for providing a single-ended amplified signal, a balun for converting the single-ended amplified signal to a differential signal, and a variable gain differential amplification stage for amplifying the differential signal from the balun. Implementing the LNA in this manner provides low noise figure, high gain, flexibility in controlling gain, and less sensitivity to ground/supply impedance.

Abstract: A message addressed to a user is received. A first model is applied to the message to produce a first output indicative of whether the message is representative of a non-malicious message. The first model is trained using past messages that have been verified as non-malicious messages. It is determined, based on the first output, that the message is potentially a malicious message. Responsive to determining that the message is potentially a malicious email based on the first output, apply a second model to the message to produce a second output indicative of whether the message is representative of a given type of attack. The second model is one of a plurality of models. At least one model included in the plurality of models is associated with characterizing a goal of the malicious message. An action is performed with respect to the message based on the second output.

Abstract: A method for fabricating a three-dimensional memories is provided. A stack with multiple levels is formed, and each of the levels includes an isolation layer, a metal layer, and a semiconductor layer between the isolation layer and the metal layer. A first trench and a plurality of second trenches are formed along each parallel line in the stack of the levels. The isolation layers and the metal layers in the parallel lines are removed through the first trench and the second trenches, so as to expose the semiconductor layers in the parallel line. A plurality of memory cells are formed in the parallel lines of the levels. In each of the levels, each of the memory cells includes a transistor and a channel of the transistor is formed by the semiconductor layer in the parallel line.

Abstract: An illumination system, a projection device, and a projection control method are provided. The illumination system includes a first light-emitting unit, a second light-emitting unit, a third light-emitting unit, a first dichroic element, a second dichroic element, and a control unit. The first light-emitting unit includes a first light-emitting element and a second light-emitting element. The control unit is electrically connected to the first light-emitting unit and configured to switch the illumination system between a high-performance mode and a high-chroma mode, wherein when the illumination system is in the high-performance mode, the control unit controls a current ratio of the second light-emitting element to be greater than a current ratio of the first light-emitting element, and when the illumination system is in the high-chroma mode, the control unit controls the current ratio of the second light-emitting element to be less than the current ratio of the first light-emitting element.

Abstract: The present disclosure relates to an innovative leather and a manufacturing method thereof. The innovative leather includes a TPU substrate, a TPU adhering layer, and a TPU surface layer. The TPU adhering layer is disposed on the TPU substrate. The TPU surface layer is disposed on the TPU adhering layer. All materials of the innovative leather of the present disclosure are the same TPU materials, thus the innovative leather of the present disclosure can be recycled after the innovative leather of the present disclosure is used. The innovative leather of the present disclosure has recycling benefit.

Abstract: A driving mechanism is provided, including a base, a movable unit, and a movable part. The movable unit is movably disposed on the base and connected to an optical element. The movable part is movably disposed on the base and forms a passage. When the movable part moves from the first position to the second position relative to the base, the movable unit can slide relative to the base from its initial position through the passage to a closed position.

Abstract: Disclosed herein are related to an integrated circuit to regulate a supply voltage. In one aspect, the integrated circuit includes a metal rail including a first point, at which a first functional circuit is connected, and a second point, at which a second functional circuit is connected. In one aspect, the integrate circuit includes a voltage regulator coupled between the first point of the metal rail and the second point of the metal rail. In one aspect, the voltage regulator senses a voltage at the second point of the metal rail and adjusts a supply voltage at the first point of the metal rail, according to the sensed voltage at the second point of the metal rail.

Abstract: Memory devices and methods of forming the memory devices are disclosed herein. The memory devices include a resistive memory array including a first resistive memory cell, a staircase contact structure adjacent the resistive memory array, and an inter-metal dielectric layer over the staircase contact structure. The memory devices further include a first diode and a second diode over the inter-metal dielectric layer. The memory devices further include a first conductive via electrically coupling the first diode to a first resistor of the first resistive memory cell and a second conductive via electrically coupling the second diode to a second resistor of the first resistive memory cell.

Abstract: A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source/drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.

Abstract: An anti-fuse memory device includes an anti-fuse module, a reference current circuit and a controller. A write enable signal enables a write controller and a write buffer of the anti-fuse module to program a selected anti-fuse memory cell in an anti-fuse array of the anti-fuse module, and a timing controller of the anti-fuse module stops a program operation of the anti-fuse array after a sense amplifier of the anti-fuse module changes a state of a readout data signal for a predetermined time duration.

Abstract: The present application provides a method for determining a stability of a welding equipment. The method includes acquiring initial welding images of the welding equipment; obtaining at least one welding spot position of each of at least one welded workpiece in each initial welding image by processing the initial welding images; determining a welding center position of each welded workpiece based on the at least one welding spot position of each welded workpiece, and obtaining welding center positions of all welded workpieces comprised in the initial welding images; and determining a stability of welding equipment based on the welding center positions of all welded workpieces. The method determines whether the welding equipment is stable by analyzing the welding images, thereby improving an accuracy of a detection of a stability of the welding equipment.

Abstract: A capacitor on a fin structure includes a fin structure. A dielectric layer covers the fin structure. A first electrode extension is embedded within the fin structure. A first electrode penetrates the dielectric layer and contacts the first electrode extension. A second electrode and a capacitor dielectric layer are disposed within the dielectric layer. The capacitor dielectric layer surrounds the second electrode, and the capacitor dielectric layer is between the second electrode and the first electrode extension.

Abstract: A deflecting plate includes a silicon-on-insulator (SOI) substrate. The SOI substrate includes: an insulator layer having a top surface and a bottom surface; a device layer coupled to the insulator layer at the top surface, wherein multiple deflecting apertures are disposed in the device layer, each of which extending from a top open end to a bottom open end through the device layer, and wherein the bottom open end is coplanar with the top surface of the insulator layer; and a handle substrate coupled to the insulator layer at the bottom surface, wherein a cavity is disposed in the handle substrate and extends from a cavity open end to a cavity bottom wall, and wherein the bottom wall is coplanar with the top surface of the insulator layer, such that the bottom open end of each deflecting aperture is exposed to the cavity.