Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: A plating system and a method thereof are disclosed. The plating system performs a N-stage plating drilling filling process in which a M-th stage plating drilling filling process with a M-th current density is performed on a hole of a substrate for a M-th plating time to form a M-th plating layer on the to-be-plated layer, wherein N is a positive integer equal to or greater than 3, and M is a positive integer positive integer in a range of 1 to N. Therefore, the technical effect of providing a higher drilling filling rate than conventional plating filling technology under a condition that a total thickness of plating layers is fixed can be achieved.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A method includes forming a dielectric layer over a substrate, the dielectric layer having a top surface; etching an opening in the dielectric layer; forming a bottom electrode within the opening, the bottom electrode including a barrier layer; forming a phase-change material (PCM) layer within the opening and on the bottom electrode, wherein a top surface of the PCM layer is level with or below the top surface of the dielectric layer; and forming a top electrode on the PCM layer.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A filter device and a filter system are provided. A magnetic unit is disposed on at least one side of the filter device. The filter device includes a filter and a magnetic fixing device. The filter includes a first side wall. The magnetic fixing device includes a body, a clipping portion, and the magnetic unit. The body includes a top edge, a bottom edge, a first side face, and a second side face opposite to the first side face. The clipping portion includes a top flange extending from the top edge along the facing direction of the first side face by a first distance and a clip plate extending from an outer edge of the top flange toward the bottom edge by a second distance. The first side wall is clipped between the clip plate and the first side face. The magnetic unit is disposed on the second side face. The filter system includes a frame and the filter device.

Abstract: A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.

Abstract: An energy harvesting device and a display device are provided. The energy harvesting device is configured to generate a power signal and the energy harvesting device includes a slot antenna. The slot antenna comprises a first section and a second section. The first section of the slot antenna is a linear shape and comprises an opening end, and the second section of the slot antenna is a bending shape and comprises a plurality of continuously bending corners.

Abstract: An antenna device including an antenna radiator and a feed line layer is provided. The antenna radiator is disposed on a first surface of a detachable substrate. The antenna radiator receives a microwave signal of at least one frequency band. The feed line layer is disposed on a second surface of a control circuit board. The feed line layer includes a signal feed line. The signal feed line is coupled to the antenna radiator through a connection point. The connection point is located on one side of the control circuit board. The detachable substrate and the control circuit board are arranged to have an angle between the first surface and the second surface. In addition, an electronic apparatus is also provided.

Abstract: A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a metallization layer and a dielectric layer disposed on the metallization layer. The metallization layer has conductive patterns, where each of the conductive patterns includes crystal grains, the crystal grains each are in a column shape and include a plurality of first banded structures having copper atoms oriented on a (220) lattice plane.

Abstract: A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a metallization layer and a dielectric layer disposed on the metallization layer. The metallization layer has conductive patterns, where each of the conductive patterns includes crystal grains, the crystal grains each are in a column shape and include a plurality of first banded structures having copper atoms oriented on a (220) lattice plane.

Abstract: An energy harvesting device and a display device are provided. The energy harvesting device is configured to generate a power signal and the energy harvesting device includes a slot antenna. The slot antenna comprises a first section and a second section. The first section of the slot antenna is a linear shape and comprises an opening end, and the second section of the slot antenna is a bending shape and comprises a plurality of continuously bending corners.

Abstract: An electronic tag including an electronic paper display, a driving circuit, and an energy harvesting device is provided. The electronic paper display is configured to display tag information. The driving circuit is coupled to the electronic paper display and includes a voltage detecting circuit. The energy harvesting device is coupled to the driving circuit and configured to generate a first power signal. The voltage detecting circuit is configured to receive the first power signal. When a voltage value of the first power signal is higher than a threshold voltage value, the voltage detecting circuit outputs the first output power signal so that the driving circuit enables the electronic paper display by the first output power signal. In addition, a driving method of the above electronic tag is also provided.

Abstract: A filter device and a filter system are provided. A magnetic unit is disposed on at least one side of the filter device. The filter device includes a filter and a magnetic fixing device. The filter includes a first side wall. The magnetic fixing device includes a body, a clipping portion, and the magnetic unit. The body includes a top edge, a bottom edge, a first side face, and a second side face opposite to the first side face. The clipping portion includes a top flange extending from the top edge along the facing direction of the first side face by a first distance and a clip plate extending from an outer edge of the top flange toward the bottom edge by a second distance. The first side wall is clipped between the clip plate and the first side face. The magnetic unit is disposed on the second side face. The filter system includes a frame and the filter device.

Abstract: A structure for attaching an ultrasound sensor to a side portion of a vehicle includes a bracket via which the ultrasound sensor is attached to face the ground under the floor of the vehicle and to be inclined at a predetermined angle with respect to the horizontal plane such that water drops adhering to the ultrasound sensor flow downward.