Patents by Inventor Yu-Ming Lee

Yu-Ming Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9287133
    Abstract: A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: March 15, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ying-Hsueh Changchien, Yu-Ming Lee, Chi-Ming Yang
  • Publication number: 20160042678
    Abstract: An electronic paper apparatus including a communication module and a control module is provided. The communication module receives an electrical signal and generates a power voltage according to the electric signal. The communication module wakes up a controller during a first period of a work period by using the power voltage. The control module is electrically connected to the communication module, and includes the controller and an electronic paper display. The control module establishes a communication connection with the communication module during a second period of the work period. The power circuit module generates a driving voltage according to the power voltage to drive the electronic paper display to display image information according to the driving voltage during a display period. The first period and the second period are two continuous time intervals forming the work period. Furthermore, a driving method of the electronic paper apparatus is also provided.
    Type: Application
    Filed: July 26, 2015
    Publication date: February 11, 2016
    Inventors: Chuen-Jen Liu, Li-Wei Chou, Jia-Hong Xu, Yu-Ming Lee, Chi-Mao Hung
  • Publication number: 20150255303
    Abstract: A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal.
    Type: Application
    Filed: March 10, 2014
    Publication date: September 10, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: YING-HSUEH CHANGCHIEN, YU-MING LEE, CHI-MING YANG
  • Publication number: 20150111311
    Abstract: A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, in which the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. An etching apparatus of selectively removing silicon nitride is also provided.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 23, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ying-Hsueh CHANGCHIEN, Yu-Ming Lee, Chi-Ming Yang
  • Publication number: 20150111390
    Abstract: A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; providing a mixture of phosphoric acid and a silicon-containing material; and delivering the mixture to the surface of the wafer to remove the silicon nitride. Single wafer etching apparatuses of selectively removing silicon nitride are also provided.
    Type: Application
    Filed: October 23, 2013
    Publication date: April 23, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ying-Hsueh CHANGCHIEN, Yu-Ming LEE, Chi-Ming YANG
  • Publication number: 20150001723
    Abstract: A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
    Type: Application
    Filed: September 18, 2014
    Publication date: January 1, 2015
    Inventors: Ying-Hsueh Chang Chien, Yu-Ming Lee, Man-Kit Leung, Chi-Ming Yang
  • Patent number: 8871639
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: October 28, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Hsueh Chang Chien, Yu-Ming Lee, Man-Kit Leung, Chi-Ming Yang
  • Patent number: 7776757
    Abstract: The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first metal layer and a first silicon layer by an in-situ deposition process, patterning the first silicon layer to remove a portion overlying the second region, patterning the first metal layer using the patterned first silicon layer as a mask, and removing the patterned first silicon layer including applying a solution. The solution includes a first component having an [F-] concentration greater than 0.01M, a second component configured to adjust a pH of the solution from about 4.3 to about 6.7, and a third component configured to adjust a potential of the solution to be greater than ?1.4 volts.
    Type: Grant
    Filed: January 15, 2009
    Date of Patent: August 17, 2010
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Simon Su-Horng Lin, Yu-Ming Lee, Shao-Yen Ku, Chi-Ming Yang, Chyi-Shyuan Chern, Chin-Hsiang Lin
  • Publication number: 20100178772
    Abstract: The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first metal layer and a first silicon layer by an in-situ deposition process, patterning the first silicon layer to remove a portion overlying the second region, patterning the first metal layer using the patterned first silicon layer as a mask, and removing the patterned first silicon layer including applying a solution. The solution includes a first component having an [F—] concentration greater than 0.01 M, a second component configured to adjust a pH of the solution from about 4.3 to about 6.7, and a third component configured to adjust a potential of the solution to be greater than ?1.4 volts.
    Type: Application
    Filed: January 15, 2009
    Publication date: July 15, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Simon Su-Horng Lin, Yu-Ming Lee, Shao-Yen Ku, Chi-Ming Yang, Chyi-Shyuan Chern, Chin-Hsiang Lin
  • Publication number: 20100138179
    Abstract: A diagnostic system for monitoring internal conditions inside a fuel cell includes a pair of bipolar plates, a gas diffusion layer, a central controller, and three or more sensors. Each bipolar plate contains a fuel gas channel. The central controller includes a computing unit and a display. Each sensor has a resistor portion, a capacitor portion, a common lead, a resistor line, and a capacitor line for detecting a voltage value, a resistance value, and a capacity value. The display shows out physical information detected by these sensors for diagnosing the fuel cell. The physical information includes voltage, resistance, capacity, temperature, humidity, flow velocity, and flow rate. In which, it can detect various physical information inside the fuel cell. It can monitor the internal conditions continuously and directly. Plus, it can prolong the product life of the fuel cell.
    Type: Application
    Filed: April 28, 2009
    Publication date: June 3, 2010
    Applicant: YUAN ZE UNIVERSITY
    Inventors: CHI-YUAN LEE, SHUO-JEN LEE, YU-MING LEE, FANG-BOR WENG, PEI-HUNG CHI
  • Publication number: 20070281853
    Abstract: This invention is to introduce a manufacturing method of fuel cell with integration of catalytic layer and micro sensors, which comprises following steps: manufacturing multi-hole silicon layer step, generating catalytic layer step, forming insulation layer step, integrating micro sensors step, and finalizing step. With the function of gas-diffusion layer in the multi-hole silicon wafer and multiple catalytic grains evenly spread over the inner walls of flow-way holes of the silicon wafer, a great catalytic layer can be formed effectively. Further, micro sensors properly are integrated. This invention's merits include simple structure and capabilities of simultaneously detecting temperature and humidity. Plus, it can heat up internally for a fuel cell.
    Type: Application
    Filed: June 1, 2007
    Publication date: December 6, 2007
    Inventors: Chi-Yuan Lee, Shuo-Jen Lee, Chi-Wei Chung, Chi-Lei Hsieh, Guan-Wei Wu, Yu-Ming Lee
  • Publication number: 20070141414
    Abstract: A fuel cell having micro sensors is disclosed. It has a pair of bipolar plates and a catalytic portion. About each bipolar plate, it has an inner surface and an outer surface. There are a fluid inlet, a fluid outlet, a channel, one or more micro sensors and several signal lines disposed on this inner surface. This catalytic portion is disposed between two bipolar plates. So, it can detect the actual internal conditions in the fuel cell. There is no need to install extra micro sensors. And, the fuel cell stability and safety can be enhanced significantly.
    Type: Application
    Filed: April 26, 2006
    Publication date: June 21, 2007
    Inventors: Shuo-Jen Lee, Chi-Yuan Lee, Yu-Ming Lee
  • Publication number: 20070138023
    Abstract: A combined electrochemical machining and electropolishing micro-machining method includes the steps of (1) preparing step, (2) first-stage processing step, (3) second-stage processing step, and (4) finishing step. The apparatus includes an electrochemical machining solution container, an electropolishing solution container, a metal workpiece connecting with an anode, a mold-plate portion connecting with a cathode. Based on this arrangement, the metal workpiece is immersed in a first working fluid to conduct the electrochemical machining process and then to be immersed in a second working fluid to conduct the electropolishing process. So, the overall micro-machining speed is fast. It can improve the surface roughness significantly. It is suitable for extremely hard metal workpiece.
    Type: Application
    Filed: July 14, 2006
    Publication date: June 21, 2007
    Inventors: Shuo-Jen Lee, Jian-Jang Lai, Yu-Ming Lee