Patents by Inventor Yu-Ting Huang

Yu-Ting Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240154447
    Abstract: A power system including a first battery pack, a second battery pack, and a power management circuit is disclosed. The first battery pack has a first end and a second end, and has a first battery capacity. The second battery pack has a third end and a fourth end. The third end is coupled to the second end of the first battery pack and provides a low battery voltage. The fourth end is grounded, the second battery pack has a second battery capacity, and the second battery capacity is greater than the first battery capacity. The power management circuit is coupled to the second battery pack to receive the low battery voltage, and provides a component operating voltage to an electronic components based on the low battery voltage.
    Type: Application
    Filed: August 29, 2023
    Publication date: May 9, 2024
    Applicant: PEGATRON CORPORATION
    Inventors: Yi-Hsuan Lee, Liang-Cheng Kuo, Chun-Wei Ko, Ya Ju Cheng, Chih Wei Huang, Ywh Woei Yeh, Yu Cheng Lin, Yen Ting Wang
  • Patent number: 11972951
    Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: April 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Wei Chang, Kao-Feng Lin, Min-Hsiu Hung, Yi-Hsiang Chao, Huang-Yi Huang, Yu-Ting Lin
  • Publication number: 20240130614
    Abstract: An intraocular pressure inspection device includes an intraocular pressure detection unit, a high-precision positioning system and a wide-area positioning system, wherein according to the position of the intraocular pressure detection unit, a set of high-precision coordinates output by the high-precision positioning system and a set of wide-area coordinates output by the wide-area positioning system are integrated in appropriate weights to obtain a set of more precise integrated coordinate. The above-mentioned intraocular pressure inspection device can prevent the intraocular pressure detection unit from failing to operate once it is not in the working area of the high-precision positioning system.
    Type: Application
    Filed: October 13, 2023
    Publication date: April 25, 2024
    Inventors: Shao Hung HUANG, Chao-Ting CHEN, Fong Hao KUO, Yu-Chung TUNG, Chu-Ming CHENG, Chi-Yuan KANG
  • Publication number: 20240136183
    Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.
    Type: Application
    Filed: January 2, 2024
    Publication date: April 25, 2024
    Inventors: Yu-Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
  • Publication number: 20240124163
    Abstract: A magnetic multi-pole propulsion array system is applied to at least one external cathode and includes a plurality of magnetic multi-pole thrusters connected adjacent to each other. Each magnetic multi-pole thruster includes a propellant provider, a discharge chamber, an anode and a plurality of magnetic components. The propellant provider outputs propellant. The discharge chamber is connected with the propellant provider to accommodate the propellant. The anode is disposed inside the discharge chamber to generate an electric field. The plurality of magnetic components is respectively disposed on several sides of the discharge chamber. One of the several sides of the discharge chamber of the magnetic multi-pole thruster is applied for one side of a discharge chamber of another magnetic multi-pole thruster.
    Type: Application
    Filed: December 19, 2022
    Publication date: April 18, 2024
    Applicant: National Cheng Kung University
    Inventors: Yueh-Heng Li, Yu-Ting Wu, Chao-Wei Huang, Wei-Cheng Lo, Hsun-Chen Hsieh, Ping-Han Huang, Yi-Long Huang, Sheng-Wen Liu, Wei-Cheng Lien
  • Publication number: 20240114810
    Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.
    Type: Application
    Filed: April 20, 2023
    Publication date: April 4, 2024
    Inventors: Fu-Ting Sung, Jhih-Bin Chen, Hung-Shu Huang, Hong Ming Liu, Hsia-Wei Chen, Yu-Wen Liao, Wen-Ting Chu
  • Publication number: 20240114545
    Abstract: A method, a wireless modem and a mobile device for wireless communication are provided. The method for wireless communication includes: judging a plurality of service types for a plurality of cells; judging a plurality of gears for each of the service types; obtaining a customization favor setting; obtaining a plurality of weighted priority values for the plurality of cells according to the plurality of service types and the customization favor setting; obtaining a plurality of weighted signal quality values for the plurality of cells according to the plurality of service types, the plurality of gears for each of the plurality of service types and the customization favor setting; in an idle mode, triggering mobility via cell reselection which uses the weighted priority values or the weighted signal quality values; and in a connected mode, triggering mobility via measurement reports which are generated based on the weighted signal quality values.
    Type: Application
    Filed: October 2, 2023
    Publication date: April 4, 2024
    Inventors: Yu-Ting SUN, Wan-Ting HUANG, I-Ching HSIEH
  • Patent number: 11947212
    Abstract: An electronic device which is capable of being bent in a first direction and includes a plurality of light-emitting units and a plurality of conductive patterns overlapping with at least a portion of the plurality of light-emitting units and extending in a second direction. The first direction and the second direction have an angle ? of not greater than 30 degrees.
    Type: Grant
    Filed: January 21, 2021
    Date of Patent: April 2, 2024
    Assignee: InnoLux Corporation
    Inventors: Yuan-Lin Wu, Yu-Chia Huang, Yu-Ting Huang, Kuan-Feng Lee, Chia-Hung Hsieh
  • Patent number: 11944017
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.
    Type: Grant
    Filed: May 5, 2023
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tai-Yen Peng, Yu-Shu Chen, Chien Chung Huang, Sin-Yi Yang, Chen-Jung Wang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
  • Patent number: 11939603
    Abstract: A modified cutinase is disclosed. The cutinase has the modified amino acid sequence of SEQ ID NO: 2, wherein the modification is a substitution of asparagine at position 181 with alanine, or substitutions of asparagine at position 181 with alanine and phenylalanine at position 235 with leucine. The modified enzyme has improved PET-hydrolytic activity, and thus, the high-activity PET hydrolase is obtained, and the industrial application value of the PET hydrolase is enhanced.
    Type: Grant
    Filed: June 21, 2023
    Date of Patent: March 26, 2024
    Assignee: HUBEI UNIVERSITY
    Inventors: Chun-Chi Chen, Jian-Wen Huang, Jian Min, Xian Li, Beilei Shi, Panpan Shen, Yu Yang, Yumei Hu, Longhai Dai, Lilan Zhang, Yunyun Yang, Rey-Ting Guo
  • Patent number: 11943935
    Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.
    Type: Grant
    Filed: September 26, 2022
    Date of Patent: March 26, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Yen Tseng, Shu-Ru Wang, Yu-Tse Kuo, Chang-Hung Chen, Yi-Ting Wu, Shu-Wei Yeh, Ya-Lan Chiou, Chun-Hsien Huang
  • Publication number: 20240099150
    Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 21, 2024
    Inventors: Tai-Yen Peng, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
  • Publication number: 20240096781
    Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.
    Type: Application
    Filed: March 20, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Ti Lu, Hao-Yi Tsai, Chia-Hung Liu, Yu-Hsiang Hu, Hsiu-Jen Lin, Tzuan-Horng Liu, Chih-Hao Chang, Bo-Jiun Lin, Shih-Wei Chen, Hung-Chun Cho, Pei-Rong Ni, Hsin-Wei Huang, Zheng-Gang Tsai, Tai-You Liu, Po-Chang Shih, Yu-Ting Huang
  • Patent number: 11913981
    Abstract: An electrostatic sensing system configured to sense an electrostatic information of a fluid inside a fluid distribution component and including an electrostatic sensing assembly, a signal amplifier and an analog-to-digital converter. The electrostatic sensing assembly includes a sensing component, and a shield. The sensing component is configured to be disposed at the fluid distribution component. The sensing component is disposed through the fluid distribution component so as to be partially located in the fluid distribution component. The shield surrounds a part of the sensing component that is located in the fluid distribution component. At least part of the shield is located on an upstream side of the sensing component. The signal amplifier is electrically connected to the sensing component. The analog-to-digital converter is electrically connected to the signal amplifier. The shield has an opening spaced apart from the sensing component.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: February 27, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Mean-Jue Tung, Ming-Da Yang, Shi-Yuan Tong, Yu-Ting Huang, Chun-Pin Wu
  • Patent number: 11838694
    Abstract: A heat dissipation device for a projector includes a light source, a light valve, a prism set, a shading element, and a projection lens. The light source emits a light beam. The light valve is disposed downstream of a light path of the light source to receive the light beam, convert a part of the light beam into image light and another part of the light beam into an ineffective light beam. The prism set includes at least one prism, receiving the image light and the ineffective light beam. The shading element includes a heat dissipation part and is disposed downstream of a light path of the prism set and used to block the ineffective light beam from the prism set. The projection lens is disposed downstream of the light path of the prism set.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: December 5, 2023
    Assignee: Young Optics Inc.
    Inventors: Wei-Cheng Lo, Yu-Ting Huang
  • Patent number: 11747301
    Abstract: A magnetic field structure is provided and includes: two magnetic poles disposed in a magnetic circuit path and opposite to one another to form a space therebetween for receiving an element to be tested; a magnetic field source for providing a magnetic field in the space; and an optical positioning element disposed in one of the two magnetic poles for optically positioning the element to be tested. Therefore, the magnetic field structure can simultaneously provide a strong magnetic field and a precise positioning function.
    Type: Grant
    Filed: December 15, 2021
    Date of Patent: September 5, 2023
    Assignee: Industrial Technology Research Institute
    Inventors: Mean-Jue Tung, Shi-Yuan Tong, Yu-Ting Huang
  • Patent number: 11742039
    Abstract: A small-area side-capacitor read-only memory device, a memory array and a method for operating the same are provided. The small-area side-capacitor read-only memory device embeds a field-effect transistor in a semiconductor substrate. The field-effect transistor includes a first dielectric layer and a first conductive gate stacked on the first dielectric layer. The side of the first conductive gate extends to the top of the second dielectric layer and connects to the second conductive gate to generate a capacitance effect. The second conductive gate has finger portions connected to a strip portion. Thus, the memory device employs the smallest layout area to generate the highest capacitance value, thereby decreasing the overall area of the read-only memory and performing efficient reading and writing.
    Type: Grant
    Filed: March 18, 2022
    Date of Patent: August 29, 2023
    Assignee: Yield Microelectronics Corp.
    Inventors: Yu Ting Huang, Chi Pei Wu
  • Publication number: 20230230646
    Abstract: A small-area side-capacitor read-only memory device, a memory array and a method for operating the same are provided. The small-area side-capacitor read-only memory device embeds a field-effect transistor in a semiconductor substrate. The field-effect transistor includes a first dielectric layer and a first conductive gate stacked on the first dielectric layer. The side of the first conductive gate extends to the top of the second dielectric layer and connects to the second conductive gate to generate a capacitance effect. The second conductive gate has finger portions connected to a strip portion. Thus, the memory device employs the smallest layout area to generate the highest capacitance value, thereby decreasing the overall area of the read-only memory and performing efficient reading and writing.
    Type: Application
    Filed: March 18, 2022
    Publication date: July 20, 2023
    Inventors: YU TING HUANG, CHI PEI WU
  • Publication number: 20230225096
    Abstract: The present disclosure provides an electromagnetic wave absorbing material, including a core containing iron oxide having a first thermal expansion coefficient; and a shell layer covering the core, which has a second thermal expansion coefficient less than the first thermal expansion coefficient, and the shell layer contains an inorganic compound selected from a group consisting of oxides, nitrides or any combination thereof. The present disclosure further provides a composite structure for suppressing electromagnetic interference including the electromagnetic wave absorbing material as claimed.
    Type: Application
    Filed: December 29, 2022
    Publication date: July 13, 2023
    Inventors: Chun-Pin WU, Mean-Jue TUNG, Shi-Yuan TONG, Wen-Song KO, Yu-Ting HUANG
  • Patent number: D1019651
    Type: Grant
    Filed: September 8, 2021
    Date of Patent: March 26, 2024
    Assignee: KINGSTON DIGITAL, INC.
    Inventors: Yu-Kuo Huang, Yi-Ting Lin