Patents by Inventor Yuangang Wang

Yuangang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170300419
    Abstract: A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.
    Type: Application
    Filed: June 30, 2017
    Publication date: October 19, 2017
    Applicants: HUAWEI TECHNOLOGIES CO.,LTD., Fudan University
    Inventors: RenHua Yang, Junfeng Zhao, Wei Yang, Yuangang Wang, Yinyin Lin
  • Publication number: 20170262172
    Abstract: A file access method and apparatus, and a storage device are presented, where the file access method is applied to a storage device in which a file system is established based on a memory. The storage device obtains, according to a file identifier of a to-be-accessed first target file, an index node of the first target file in metadata, where the index node of the first target file stores information about first virtual space of the first target file in global virtual space. The storage device maps the first virtual space onto second virtual space of a process, and performs addressing on an added file management register to access the first target file according to a start address of the first virtual space and a base address of a page directory of the global file page table stored in the file management register.
    Type: Application
    Filed: May 26, 2017
    Publication date: September 14, 2017
    Inventors: Jun Xu, Guanyu Zhu, Yuangang Wang
  • Patent number: 9741418
    Abstract: A write apparatus and a magnetic memory, where the write apparatus includes a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer. A first area locates between the first information storage area and the information buffer. A second area locates between the second information storage area and the information buffer. The first information storage area, the second information storage area, and the information buffer are made of a first magnetic material. The first area and the second area are made of a second magnetic material. Magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material. The write apparatus can ensure write stability of the magnetic memory.
    Type: Grant
    Filed: October 25, 2016
    Date of Patent: August 22, 2017
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Yarong Fu, Junfeng Zhao, Yuangang Wang, Wei Yang, Yinyin Lin, Kai Yang
  • Publication number: 20170235499
    Abstract: A file access method, a system, and a host are provided. According to the method, after obtaining information about first virtual space of a target file, a host allocates, in local virtual address space of the host, second virtual space to the target file, where the first virtual space is space allocated in global virtual address space by a management node in a distributed storage system to the target file. The host converts, according to a correspondence between the first virtual space and the second virtual space, a second access request of accessing the second virtual space into a first access request, where an address of the first virtual space in the first access request includes device information of a first storage node. Then, the host sends the first access request to a network device to route the first access request to the first storage node.
    Type: Application
    Filed: April 28, 2017
    Publication date: August 17, 2017
    Inventors: Jun Xu, Yuangang Wang, Guanyu Zhu
  • Publication number: 20170185449
    Abstract: A data processing method based on a multi-core processor chip, an apparatus, and a system are provided. The data processing method includes: obtaining, by a first processor core, a data processing task, where the data processing task includes a processing operation identifier and a storage address of to-be-processed data (202); determining, by the first processor core, a second processor core, where the second processor core corresponds to the storage address of the to-be-processed data (204); and sending, by the first processor core, the processing operation identifier and the storage address of the to-be-processed data to the second processor core (206). The data processing method is applied to a multi-core processor chip and improves working efficiency of the multi-core processor chip.
    Type: Application
    Filed: March 15, 2017
    Publication date: June 29, 2017
    Applicant: HUAWEI TECHNOLOGIES CO.,LTD.
    Inventors: Youhui Zhang, Yanhua Li, Kunpeng Song, Yuangang Wang
  • Publication number: 20170153822
    Abstract: A file management method, a distributed storage system, and a management node are disclosed. In the distributed storage system, after receiving a file creation request sent by a host for requesting to create a file in a distributed storage system, a management node allocates, to the file, first virtual space from global virtual address space of the distributed storage system, where local virtual address space of each storage node in the distributed storage system is corresponding to a part of the global virtual address space. Then, the management node records metadata of the file, where the metadata of the file includes information about the first virtual space, and the information about the first virtual space is used to point to local virtual address space of a storage node that is used to store the file. Further, the management node sends, the information about the first virtual space to the host.
    Type: Application
    Filed: February 9, 2017
    Publication date: June 1, 2017
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Jun XU, Junfeng ZHAO, Yuangang WANG
  • Patent number: 9653099
    Abstract: An information storage apparatus includes a magnetic track, a writer, and a reader, where the magnetic track includes a number of magnetic domains. Each magnetic domain is divided into at least two magnetic regions, and the writer is disposed on the magnetic track, and configured to write information to the at least two magnetic regions of each magnetic domain. The reader, disposed on the magnetic track, is configured to read the written information from the at least two magnetic regions. Therefore, multiple pieces of valid information are written to one magnetic domain of the magnetic track, thereby increasing storage density of the magnetic track, and expanding a storage capacity of the storage apparatus.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: May 16, 2017
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Yinyin Lin, Yarong Fu, Kai Yang, Wei Yang, Yuangang Wang, Junfeng Zhao
  • Publication number: 20170133074
    Abstract: A magnetic storage apparatus is disclosed, and is configured to access data. The magnetic storage apparatus includes a magnetic storage track, a first write apparatus, a second write apparatus, and a drive apparatus. The first write apparatus and the second write apparatus are located at different positions on the magnetic storage track. The first write apparatus is configured to write first data “0” or second data “1”. The second write apparatus is configured to write third data “2” and fourth data “3”.
    Type: Application
    Filed: January 13, 2017
    Publication date: May 11, 2017
    Inventors: Kai Yang, Junfeng Zhao, Yuangang Wang, Wei Yang, Yinyin Lin, Yarong Fu
  • Publication number: 20170040046
    Abstract: A write apparatus and a magnetic memory, where the write apparatus includes a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer. A first area locates between the first information storage area and the information buffer. A second area locates between the second information storage area and the information buffer. The first information storage area, the second information storage area, and the information buffer are made of a first magnetic material. The first area and the second area are made of a second magnetic material. Magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material. The write apparatus can ensure write stability of the magnetic memory.
    Type: Application
    Filed: October 25, 2016
    Publication date: February 9, 2017
    Inventors: Yarong Fu, Junfeng Zhao, Yuangang Wang, Wei Yang, Yinyin Lin, Kai Yang
  • Publication number: 20160203835
    Abstract: An information storage apparatus includes a magnetic track, a writer, and a reader, where the magnetic track includes a number of magnetic domains. Each magnetic domain is divided into at least two magnetic regions, and the writer is disposed on the magnetic track, and configured to write information to the at least two magnetic regions of each magnetic domain. The reader, disposed on the magnetic track, is configured to read the written information from the at least two magnetic regions. Therefore, multiple pieces of valid information are written to one magnetic domain of the magnetic track, thereby increasing storage density of the magnetic track, and expanding a storage capacity of the storage apparatus.
    Type: Application
    Filed: March 23, 2016
    Publication date: July 14, 2016
    Inventors: Yinyin Lin, Yarong Fu, Kai Yang, Wei Yang, Yuangang Wang, Junfeng Zhao
  • Patent number: 9171053
    Abstract: A method and a device for migrating a source system configuration item: collecting through a telnet/ssh protocol channel established with a source system and a predefined shell script corresponding to the source system, a source system configuration item corresponding to a system configuration item identifier, wherein the system configuration item identifier is a predefined system configuration item identifier corresponding to the source system; comparing the collected source system configuration item with a preset default system configuration item to obtain a non-default system configuration item, wherein the non-default system configuration item is regarded as a system configuration item that needs to be migrated; querying a mapping relationship among a pre-system: the system configuration item and a key parameter value to obtain a destination system configuration item and the key parameter value; and performing migration configuration on a destination system through the telnet/ssh protocol channel establis
    Type: Grant
    Filed: August 2, 2012
    Date of Patent: October 27, 2015
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Yi Cai, Yong Wang, Yuangang Wang, Qiang Wang
  • Patent number: 8890280
    Abstract: The present invention relates to a semiconductor device. The device comprises a semiconductor substrate. A semiconductor drift region is on the semiconductor substrate. The semiconductor drift region comprises a semiconductor region of a first conduction type and a semiconductor region of a second conduction type. The semiconductor region of the first conduction type and the semiconductor region of the second conduction type form a superjunction structure. A high-K dielectric is on the semiconductor substrate. The high-K dielectric is adjacent to the semiconductor region of the second conduction type. An active region is on the semiconductor drift region. A trench gate structure is on the high-K dielectric, the trench gate structure being adjacent to the active region. The semiconductor region of the second conduction type is formed by shallow angle ion implantation, thus its width is narrow and its concentration is high.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: November 18, 2014
    Assignee: University of Electronic Science and Technology of China
    Inventors: Xiaorong Luo, Guoliang Yao, Tianfei Lei, Yuangang Wang, Bo Zhang
  • Publication number: 20130054521
    Abstract: A method and a device for migrating a source system configuration item: collecting through a telnet/ssh protocol channel established with a source system and a predefined shell script corresponding to the source system, a source system configuration item corresponding to a system configuration item identifier, wherein the system configuration item identifier is a predefined system configuration item identifier corresponding to the source system; comparing the collected source system configuration item with a preset default system configuration item to obtain a non-default system configuration item, wherein the non-default system configuration item is regarded as a system configuration item that needs to be migrated; querying a mapping relationship among a pre-system: the system configuration item and a key parameter value to obtain a destination system configuration item and the key parameter value; and performing migration configuration on a destination system through the telnet/ssh protocol channel establis
    Type: Application
    Filed: August 2, 2012
    Publication date: February 28, 2013
    Applicant: Huawei Technologies Co., Ltd.
    Inventors: Yi Cai, Yong Wang, Yuangang Wang, Qiang Wang
  • Publication number: 20120168856
    Abstract: The present invention relates to a semiconductor device. The device comprises a semiconductor substrate. A semiconductor drift region is on the semiconductor substrate. The semiconductor drift region comprises a semiconductor region of a first conduction type and a semiconductor region of a second conduction type. The semiconductor region of the first conduction type and the semiconductor region of the second conduction type form a superjunction structure. A high-K dielectric is on the semiconductor substrate. The high-K dielectric is adjacent to the semiconductor region of the second conduction type. An active region is on the semiconductor drift region. A trench gate structure is on the high-K dielectric, the trench gate structure being adjacent to the active region. The semiconductor region of the second conduction type is formed by shallow angle ion implantation, thus its width is narrow and its concentration is high.
    Type: Application
    Filed: February 24, 2011
    Publication date: July 5, 2012
    Applicant: University of Electronic Science and Technology of China
    Inventors: Xiaorong Luo, Guoliang Yao, Tianfei Lei, Yuangang Wang, Bo Zhang