Abstract: A method and system provide a magnetic read apparatus. The magnetic read apparatus includes a read sensor. The read sensor includes a pinning layer, a nonmagnetic insertion layer and a pinned layer. The nonmagnetic insertion layer has a location selected from a first location and a second location. The first location is between the pinned layer and the pinning layer. The second location is within the pinning layer.

Abstract: A magnetic read apparatus includes a read sensor, a shield structure and a side magnetic bias structure. The read sensor includes a free layer having a side and a nonmagnetic spacer layer. The shield structure includes a shield pinning structure and a shield reference structure. The nonmagnetic spacer layer is between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment in a first direction. The shield reference structure includes a shield reference structure magnetic moment weakly coupled with the pinned magnetic moment. The side magnetic bias structure is adjacent to the side of the free layer.

Abstract: A magnetic read apparatus includes a media-facing surface (MFS), a sensor, a shield structure, a side bias structure, and a shield reference bias structure. The sensor includes a free layer and a nonmagnetic layer. The shield structure includes a shield pinning structure and a shield reference structure between the shield pinning structure and the nonmagnetic layer. The nonmagnetic layer is between the free layer and a shield reference structure. The shield pinning structure includes a pinned moment oriented in a first direction. The shield reference structure includes a reference structure moment weakly coupled with the pinned moment. The side bias structure is adjacent to a side of the free layer and biases the free layer in a first direction parallel to the MFS. The shield reference bias structure is adjacent to the shield reference structure and biases the shield reference structure in a direction opposite to the first direction.

Abstract: Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.

Abstract: A method and system provide a magnetic read apparatus. The magnetic read apparatus includes a read sensor. The read sensor includes a pinning layer, a nonmagnetic insertion layer and a pinned layer. The nonmagnetic insertion layer has a location selected from a first location and a second location. The first location is between the pinned layer and the pinning layer. The second location is within the pinning layer.

Abstract: A method provides a read sensor stack including an antiferromagnetic (AFM) layer, a pinned layer on the AFM layer, a free layer, and a nonmagnetic layer between the free and pinned layers. Providing the AFM layer includes depositing an AFM layer first portion at a first elevated temperature and at a rate of at least 0.1 Angstrom/second. This AFM layer first portion is annealed in-situ at at least one hundred degrees Celsius. An AFM sublayer is deposited at an elevated temperature and at a sublayer deposition rate of less than 0.1 Angstrom/second. The already-deposited portion of the AFM layer is annealed in-situ at at least one hundred degrees Celsius and less than five hundred degrees Celsius. The sublayer depositing and annealing steps may be repeated in order at least once to provide an AFM layer second portion that has multiple sublayers and is thinner than the AFM layer first portion.

Abstract: A method and system provide a magnetic read apparatus. The magnetic read apparatus includes a read sensor. The read sensor includes a pinning layer, a nonmagnetic insertion layer and a pinned layer. The nonmagnetic insertion layer has a location selected from a first location and a second location. The first location is between the pinned layer and the pinning layer. The second location is within the pinning layer.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract: A magnetic read apparatus includes a first sensor, a shield layer, an insulating layer, a shield structure and a second sensor. The shield layer is between the first sensor and the insulating layer. The shield structure is in the down track direction from the insulating layer. The shield structure includes a magnetic seed structure, a shield pinning structure and a shield reference structure. The magnetic seed structure adjoins the shield pinning structure. The shield pinning structure is between the shield reference structure and the magnetic seed structure. The second sensor includes a free layer and a nonmagnetic spacer layer between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment. The shield reference structure includes another magnetic moment weakly coupled with the pinned magnetic moment.

Abstract: A magnetic read apparatus includes a read sensor, a shield structure and a side magnetic bias structure. The read sensor includes a free layer having a side and a nonmagnetic spacer layer. The shield structure includes a shield pinning structure and a shield reference structure. The nonmagnetic spacer layer is between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment in a first direction. The shield reference structure includes a shield reference structure magnetic moment weakly coupled with the pinned magnetic moment. The side magnetic bias structure is adjacent to the side of the free layer.

Abstract: A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a dusting layer (e.g. tantalum). An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).

Abstract: A magnetic read apparatus includes a read sensor, a shield structure and a side magnetic bias structure. The read sensor includes a free layer having a side and a nonmagnetic spacer layer. The shield structure includes a shield pinning structure and a shield reference structure. The nonmagnetic spacer layer is between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment in a first direction. The shield reference structure includes a shield reference structure magnetic moment weakly coupled with the pinned magnetic moment. The side magnetic bias structure is adjacent to the side of the free layer.

Abstract: A magnetic read apparatus has an air-bearing surface (ABS) and includes a shield, a crystal decoupling structure on the shield and a read sensor on the crystal decoupling structure. The crystal decoupling structure includes at least one of a magnetic high crystalline temperature amorphous alloy layer and a combination of a high crystalline temperature amorphous layer and an amorphous magnetic layer. The high crystalline temperature amorphous layer has a crystalline temperature of at least three hundred degrees Celsius. The amorphous magnetic layer is amorphous as-deposited.

Abstract: Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.

Abstract: A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract: A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a dusting layer (e.g. tantalum). An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).

Abstract: Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.

Abstract: A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of 6 to 30 Angstroms of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a tantalum dusting layer. An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).

Abstract: Systems and methods are provided for manufacturing a magnetic recording sensor for use in a magnetic reader, such as a tunneling magnetoresistance (TMR) readers. The magnetic recording sensor can be manufactured by heating a substrate in a first chamber and depositing an antiferromagnetic (AFM) layer on the heated substrate. Additionally, a first pinned layer is added onto the AFM layer, and the substrate is subsequently cooled.