Abstract: A method and system provide a magnetic transducer including a first shield, a read sensor, and a second shield. The read sensor is between the first shield and the second shield. The read sensor includes a pinned layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of ferromagnetic layers interleaved with and sandwiching a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are ferromagnetically aligned.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract: Magnetic spin-torque memory cells, often referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation at zero field and zero current) of the associated ferromagnetic layers aligned perpendicular to the wafer plane, or “out-of-plane”. A memory cell may have a ferromagnetic free layer, a first pinned reference layer and a second pinned reference layer, each having a magnetic anisotropy perpendicular to the substrate. The free layer has a magnetization orientation perpendicular to the substrate that is switchable by spin torque from a first orientation to an opposite second orientation.

Abstract: Systems and methods are provided for manufacturing a magnetic recording sensor for use in a magnetic reader, such as a tunneling magnetoresistance (TMR) readers. The magnetic recording sensor can be manufactured by heating a substrate in a first chamber and depositing an antiferromagnetic (AFM) layer on the heated substrate. Additionally, a first pinned layer is added onto the AFM layer, and the substrate is subsequently cooled.

Abstract: A method and system provide a magnetic transducer including a first shield, a read sensor, and a second shield. The read sensor is between the first shield and the second shield. The read sensor has a free layer including a plurality of ferromagnetic layers interleaved with and sandwiching at least one additional layer. Each of the ferromagnetic layers includes at least one of Fe, Co and B and has a first corrosion resistance. The additional layer(s) have a second corrosion resistance greater than the first corrosion resistance.

Abstract: A method is provided for providing a magnetic recording transducer having a pinning layer with high pinning field stability. A bottom structure comprising a substrate, a magnetic shield above the substrate, a magnetic seed layer above the shield, a nonmagnetic spacer layer above the magnetic seed layer, and a layer of antiferromagnetic (AFM) material on the nonmagnetic spacer layer is provided. The bottom structure is heated to a temperature of at least 373 Kelvin (K) and then the bottom structure is cooled until the temperature of the structure is reduced to less than 293K. A pinned layer is deposited on the AFM layer, a nonmagnetic spacer is provided on the pinned layer, and a read sensor fabricated above the nonmagnetic spacer. In one embodiment, cooling the structure comprises reducing the temperature of the structure by at least 100K in less than 25 minutes.

Abstract: A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.

Abstract: Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.

Abstract: Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract: A magnetic sensor includes first and second ferromagnetic free layers that are not magnetically pinned, and a non-magnetic spacer layer disposed between them. The first ferromagnetic free layer comprises a first plurality of ferromagnetic sub-layers that includes a first cobalt iron sub-layer that is in contact with the non-magnetic spacer layer, and a first amorphous cobalt boron sub-layer that is not in contact with the non-magnetic spacer layer. The second ferromagnetic free layer comprises a second plurality of ferromagnetic sub-layers that includes a second cobalt iron sub-layer that is in contact with the non-magnetic spacer layer, and a second amorphous cobalt boron sub-layer that is not in contact with the non-magnetic spacer layer. Each of the first and second cobalt iron sub-layers has a composition Co(100?x)Fe(x) with x being in the range of 10 to 90 atomic percentage.

Abstract: A method for providing a magnetic recording transducer is provided. The method includes providing a substrate, and a magnetic shield having a top surface above the substrate. The top surface is treated by a first plasma treatment performed at a first power. An amorphous ferromagnetic (FM) layer is deposited on and in contact with the top surface to a thickness of at least 5 Angstroms and not more than 50 Angstroms. A second plasma treatment is performed at a second power. A magnetic seed layer is provided on and contact with the amorphous FM layer. The magnetic seed layer may comprise a bilayer. A nonmagnetic spacer layer is provided above the magnetic seed layer, an antiferromagnetic (AFM) layer provided above the spacer layer, and a read sensor provided above the AFM layer.

Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.

Abstract: A magnetic recording sensor with AFM exchange coupled shield stabilization for use in a data storage device includes a read sensor positioned between a bottom shield and a top shield. The top shield comprises a first ferromagnetic (FM) layer, a coupling layer, and a second FM layer. An exchange coupling insertion layer is provided between the second FM layer and an antiferromagnetic (AFM) layer above. In an embodiment of the invention, the exchange coupling insertion layer comprises CoFe with a Fe content from about 35-45 at. %, and thickness from about 1 nm to about 3 nm. In another embodiment of the invention, the exchange coupling insertion layer comprises a bi-layer, including first sub-layer comprising CoFe with Fe content from about 8-12 at. %, and second sub-layer comprising CoFe with Fe content from about 35-45 at. %, and the bi-layer has a thickness less than about 4 nm.

Abstract: An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.

Abstract: A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.

Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

Abstract: A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a bilayer magnetic seed layer, an antiferromagnetic (AFM) layer, and a read sensor. The bilayer magnetic seed layer includes a Ni1-xFex layer and a Ni1-yFey layer on the Ni1-xFex layer, where x is at least 0.3 and not more than 1 and where y is not more than 0.19. The AFM layer resides on the bilayer magnetic seed layer. The read sensor is on the AFM layer.