Abstract: An array substrate which includes a display region and a peripheral region surrounding the display region, the peripheral region includes a data line lead region and a driving circuit region, and the data line lead region is between the driving circuit region and the display region; the driving circuit region includes a driving circuit, the data line lead region includes a the plurality of data line leads, and the plurality of data line leads extend from the display region and are electrically connected with the driving circuit; and the data line lead region includes peripheral data line leads, a region of the peripheral region close to the peripheral data line leads includes at least one retaining wall configured to prevent plasma from affecting the peripheral data line leads. A method for fabricating an array substrate, a display panel, and a display device are also disclosed.

Abstract: The present application provides an array substrate and a method of manufacturing the same. The array substrate includes a first substrate having a drain electrode protruding from a side of the first substrate; a planarization layer at the side of the first substrate where the drain electrode protrudes, the planarization layer being provided with a stepped hole on the drain electrode, and a diameter of the stepped hole decreasing along a direction from a side of the planarization layer facing away the first substrate towards a side of the planarization layer facing the first substrate; a pixel electrode at the stepped hole and connected with the drain electrode; a passivation layer covering the planarization layer and the pixel electrode; and a common electrode on the passivation layer.

Abstract: An array substrate, a display device and a method for manufacturing the array substrate are provided. The array substrate includes a display region and a peripheral wiring region, wherein the array substrate includes: a base substrate; a peripheral circuit in the peripheral wiring region and on the base substrate; and an electrostatic shielding layer on a side of the peripheral circuit away from the base substrate.

Abstract: The present disclosure discloses a display panel and a display device. The display panel includes an array substrate and an opposite substrate arranged opposite to each other; the array substrate includes a box alignment area facing the opposite substrate, a circuit test area located on a side of the box alignment area; the opposite substrate includes a base substrate, a conductive black matrix arranged on a side of the base substrate facing the array substrate; the display panel further includes an electrostatic discharging layer electrically connected respectively with the conductive black matrix and a GND wire in the circuit test area; the conductive black matrix is provided with a thickened area in at least an area in contact with the electrostatic discharging layer; a thickness of the thickened area of the conductive black matrix is more than a thickness of other areas of the conductive black matrix.

Abstract: The present application provides an array substrate and a method of manufacturing the same. The array substrate includes a first substrate having a drain electrode protruding from a side of the first substrate; a planarization layer at the side of the first substrate where the drain electrode protrudes, the planarization layer being provided with a stepped hole on the drain electrode, and a diameter of the stepped hole decreasing along a direction from a side of the planarization layer facing away the first substrate towards a side of the planarization layer facing the first substrate; a pixel electrode at the stepped hole and connected with the drain electrode; a passivation layer covering the planarization layer and the pixel electrode; and a common electrode on the passivation layer.

Abstract: A nitrogen oxide gas sensor based on sulfur-doped graphene and a preparation method therefor. The method comprises the following steps: 1) providing graphene and a micro heater platform substrate, and transferring the graphene onto the micro heater platform substrate; 2) putting the micro heater platform substrate covered with the graphene into a chemical vapor deposition reaction furnace; 3) performing gas feeding and exhausting treatment to the reaction furnace by using inert gas; 4) simultaneously feeding inert gas and hydrogen gas into the reaction furnace at a first temperature; 5) feeding inert gas, hydrogen gas and sulfur source gas into the reaction furnace at a second temperature for reaction to perform sulfur doping to the graphene (21); and 6) stopping feeding the sulfur source gas, and performing cooling in a hydrogen gas and insert gas shielding atmosphere.

Abstract: An array substrate is disclosed. The array substrate includes: an underlying substrate, a light incident surface of the underlying substrate including a display region and a non-display region surrounding the display region; and a first conductive pattern arranged within the non-display region of the light incident surface of the underlying substrate. A display panel and a display device utilizing the array substrate are also disclosed.

Abstract: The present disclosure discloses a display panel and a display device. The display panel includes an array substrate and an opposite substrate arranged opposite to each other; the array substrate includes a box alignment area facing the opposite substrate, a circuit test area located on a side of the box alignment area; the opposite substrate includes a base substrate, a conductive black matrix arranged on a side of the base substrate facing the array substrate; the display panel further includes an electrostatic discharging layer electrically connected respectively with the conductive black matrix and a GND wire in the circuit test area; the conductive black matrix is provided with a thickened area in at least an area in contact with the electrostatic discharging layer; a thickness of the thickened area of the conductive black matrix is more than a thickness of other areas of the conductive black matrix.

Abstract: An array substrate is disclosed. The array substrate includes: an underlying substrate, a light incident surface of the underlying substrate including a display region and a non-display region surrounding the display region; and a first conductive pattern arranged within the non-display region of the light incident surface of the underlying substrate. A display panel and a display device utilizing the array substrate are also disclosed.

Abstract: The invention provides a sulfur doping method for graphene, which comprises the steps of: 1) providing graphene and placing the grapheme in a chemical vapor deposition reaction chamber; 2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 500-1050° C.; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere. The present invention can perform sulfur doping on the graphene simply and efficiently, the economic cost is low, and large-scale production can be realized. Large area sulfur doping on graphene can be realized, and doping of graphene on an insulating substrate or metal substrate can be carried out directly.

Abstract: The present invention provides a capacitive acceleration sensor with a bending elastic beam and a preparation method. The sensor at least includes a first electrode structural layer, a middle structural layer and a second electrode structural layer; wherein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively; the middle structural layer includes: a frame formed on a SOI silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, wherein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space.

Abstract: The present invention provides a variable area capacitive lateral acceleration sensor and a preparation method. The acceleration sensor at least includes: three-layer stack structure bonded by a first substrate, a second substrate and a third substrate which are electrically isolated with each other, wherein, the second substrate includes a movable seismic mass, a frame surrounded the movable seismic mass, a elastic beam connected to the movable seismic mass and the frame, a plurality of bar structure electrodes positioned on two surfaces of the movable seismic mass, an anti-overloading structure arranged on the movable seismic mass, etc.

Abstract: The invention provides a sulfur doping method for graphene, which comprises the steps of: 1) providing graphene and placing the grapheme in a chemical vapor deposition reaction chamber; 2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 500-1050° C.; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere. The present invention can perform sulfur doping on the graphene simply and efficiently, the economic cost is low, and large-scale production can be realized. Large area sulfur doping on graphene can be realized, and doping of graphene on an insulating substrate or metal substrate can be carried out directly.

Abstract: A capacitive acceleration sensor with an “H”-shaped beam and a preparation method. The sensor at least includes: a first electrode structural layer, a middle structural layer and a second electrode structural layer; the first electrode structural layer and the second electrode structural layer are provided with electrode lead via holes, respectively; the middle structural layer includes: a frame formed at SOI silicon substrate having a double device layer, a seismic mass whose double sides are symmetrical, and an “H”-shaped elastic beam whose double sides are symmetrical, with one end connected to the frame and the other end connected to the seismic mass, there are anti-overloading bumps and damping grooves symmetrically provided on the two sides of the seismic mass, and the “H”-shaped elastic beam and a bulk silicon layer of the oxygen containing silicon substrate satisfy the requirements therebetween: ?{square root over (2)}(a+b+c)<h, ?{square root over (2)}d<h.

Abstract: A deacidification apparatus and a deacidification process using the apparatus are disclosed. The deacidification apparatus includes a deacidification furnace, of which a furnace upper section, a furnace middle section and a furnace lower section are provided in upper, middle and lower portions respectively, wherein a gas-solid mixture inlet (1), a exhaust outlet (3) and a filtered air port (2) are provided on the furnace upper section, a product outlet (13) is provided on the furnace lower section, the upper portion of the deacidification is mounted with a filter (5) to which the gas-solid mixture inlet (1), the exhaust outlet (2) and the filtered air port (3) are connected, the filtered air port (2) is connected with a gas pulse device and a vacuum device by a three-way connecting device, and the exhaust outlet (3) is connected with atmosphere or connected with the vacuum device.

Abstract: A three-dimensional thermoelectric energy harvester and a fabrication method thereof. Low-resistivity silicon is etched to form a plurality of grooves and silicon columns between the grooves, and an insulating layer is formed on a surface of the groove, and thermoelectric columns are fabricated by using a thin-film deposition technique, so that the thermoelectric column and a neighboring silicon column form a thermocouple pair; and then, a metal wiring is fabricated by processes such as etching and deposition, followed by thinning of the substrate and bonding of the supporting substrates, thereby completing fabrication of the three-dimensional thermoelectric energy harvester. Fabrication of the thermocouple pair structure by one thin-film deposition process simplifies the fabrication process. The thermocouple pair using silicon ensures a high Seebeck coefficient. The use of vertical thermocouple pairs having a column structure improves the mechanical stability of the thermoelectric energy harvester.

Abstract: The present invention provides a variable area capacitive lateral acceleration sensor and a preparation method. The acceleration sensor at least includes: three-layer stack structure bonded by a first substrate, a second substrate and a third substrate which are electrically isolated with each other, wherein, the second substrate includes a movable seismic mass, a frame surrounded the movable seismic mass, a elastic beam connected to the movable seismic mass and the frame, a plurality of bar structure electrodes positioned on two surfaces of the movable seismic mass, an anti-overloading structure arranged on the movable seismic mass, etc.

Abstract: A capacitive acceleration sensor with an “H”-shaped beam and a preparation method. The sensor at least includes: a first electrode structural layer, a middle structural layer and a second electrode structural layer; the first electrode structural layer and the second electrode structural layer are provided with electrode lead via holes, respectively; the middle structural layer includes: a frame formed at SOI silicon substrate having a double device layer, a seismic mass whose double sides are symmetrical, and an “H”-shaped elastic beam whose double sides are symmetrical, with one end connected to the frame and the other end connected to the seismic mass, there are anti-overloading bumps and damping grooves symmetrically provided on the two sides of the seismic mass, and the “H”-shaped elastic beam and a bulk silicon layer of the oxygen containing silicon substrate satisfy the requirements therebetween: ?{square root over (2)}(a+b+c)<h, ?{square root over (2)}d<h.

Abstract: The present invention provides a capacitive acceleration sensor with a bending elastic beam and a preparation method. The sensor at least includes a first electrode structural layer, a middle structural layer and a second electrode structural layer; wherein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively; the middle structural layer includes: a frame formed on a SOI silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, wherein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space.

Abstract: A deacidification apparatus and a deacidification process using the apparatus are disclosed. The deacidification apparatus includes a deacidification furnace, of which a furnace upper section, a furnace middle section and a furnace lower section are provided in upper, middle and lower portions respectively, wherein a gas-solid mixture inlet (1), a exhaust outlet (3) and a filtered air port (2) are provided on the furnace upper section, a product outlet (13) is provided on the furnace lower section, the upper portion of the deacidification is mounted with a filter (5) to which the gas-solid mixture inlet (1), the exhaust outlet (2) and the filtered air port (3) are connected, the filtered air port (2) is connected with a gas pulse device and a vacuum device by a three-way connecting device, and the exhaust outlet (3) is connected with atmosphere or connected with the vacuum device.