Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3—ZN line is B, the material has a composition satisfying X=1.2 (1?A) (0.5+B), Y=A (0.5+B), and W=1?X?Y, where ?0.06?B?0.06 is satisfied when ?>A and ¾<A, and ?0.06?B and Y?0.45 are satisfied when ??A?¾.

Abstract: A display apparatus includes: a display; a display driver that drives the display such that the display displays in accordance with display data; and a host controller that transfers update display data of one screen to the display driver. The display driver includes a light-emission controller that causes a self-luminous elements to emit light, and a memory that stores the update display data of the one screen. The display driver reads the update display data on the memory after an elapse of a predetermined period of time from a drive end time at which the display controller finishes driving in accordance with the update display data and drives the screen by using the read update display data. The display driver drives the self-luminous elements once or more at a timing when the update display data from the host controller to the display driver is not updated.

Abstract: One aspect of the present disclosure provides a first bearing including an inner ring, an outer ring, and cylindrical rollers. The inner ring includes: an insertion groove formed in a lower surface for inserting the cylindrical rollers between an inner raceway surface and an outer raceway surface; a blocking plug configured to block the insertion groove, the blocking plug having a part of the inner raceway surface formed thereon; and a bolt for securing the blocking plug in the insertion groove. In the mating surface of the blocking plug contacted with the bottom surface of the insertion groove, when the shortest length between the bolt insertion hole and the inner raceway surface is shown as La, and the shortest length between the bolt insertion hole and the inner peripheral surface is shown as Lb, the shortest lengths La and Lb satisfy the following formula: La/Lb>0.65.

Abstract: An information processing apparatus includes a data acquisition unit, a simulation execution unit, and an optimization unit. The data acquisition unit acquires execution result data including an execution result of the substrate processing based on a process parameter including a pressure in the substrate processing apparatus and including sensor data of the pressure in the substrate processing apparatus. The simulation execution unit inputs the execution result data into a simulation model pre-stored in a storage to calculate a pressure in the substrate processing apparatus that is predicted to approach a target value for a substrate processing result. The optimization unit calculates a predicted value of the substrate processing result based on the process parameter including the calculated pressure.

Abstract: An information processing apparatus has a first display mode in which the entire screen region of a display is controlled to be displayed as a display region, and a second display mode in which a partial screen region excluding the predetermined screen region in the screen region of the display is controlled to be displayed as a display region, and performs a placement detection process of detecting placement of an external keyboard on the predetermined screen region in the screen region of the display, a communication control process of performing a communicative connection with the keyboard, and a display mode control process of controlling switching between the first display mode and the second display mode on the basis of the placement detection process and the communication control process.

Abstract: A semiconductor device includes an integrated circuit having a first resistor configuring a voltage divider circuit, a sensing resistor configured to measure a sheet resistance having a same attribute as that of the first resistor, a temperature detection circuit configured to detect a value of a first temperature, a storage circuit configured to store a table including first information for each of a plurality of values of the first temperatures, the first information corresponding to a sheet resistance of the first resistor obtained based on a result of measurement of the sensing resistor, and indicating a relationship between a second temperature and a divided voltage of the voltage divider circuit at the second temperature, and an arithmetic circuit configured to obtain the second temperature, based on the first information at the value of the first temperature detected by the temperature detection circuit and the divided voltage.

Abstract: An air cushioning material includes: a first module including a first air cell containing air, a second air cell containing air, and a first belt-like part connecting the first air cell and the second air cell to each other; a second module including a third air cell containing air, a fourth air cell containing air, and a second belt-like part connecting the third air cell and the fourth air cell to each other; a coupling part that couples a part of the second air cell and a part of the fourth air cell in a second direction, where a direction from the second air cell toward the first air cell and a direction from the fourth air cell toward the third air cell are defined as a first direction, and a direction intersecting the first direction is defined as the second direction.

Abstract: A vehicle control device includes a driving controller controls one of or both steering and acceleration/deceleration of the vehicle, and a mode determinator determines any of a plurality of driving modes including a first driving mode and a second driving mode as a driving mode of the vehicle, in which tasks imposed on a driver in the second driving mode are less significant than in the first driving mode and one of or both steering and acceleration/deceleration of the vehicle are controlled by the driving controller, the driving controller controls the vehicle in the second driving mode, and the driving mode is changed to the first driving mode when an abnormality occurs in a combination switch, combination switch related equipment which is connected between the driving controller and the combination switch via a communication line, or communication which is performed by the combination switch and the driving controller.

Abstract: According to one embodiment, a magnetic memory device includes: a first interconnect; a second interconnect; a first switching element provided on the first interconnect; a second switching element provided on the second interconnect; a first insulating layer provided surrounding the first switching element; a second insulating layer surrounding the second switching element and not being in contact with the first insulating layer; a first conductor provided on the first switching element and the first insulating layer; a second conductor provided on the second switching element and the second insulating layer; a first magnetoresistive effect element provided on the first conductor; and a second magnetoresistive effect element provided on the second conductor.

Abstract: This anisotropic conductive sheet (10) comprises: an insulating layer (11) having a first surface located on one side in the thickness direction, a second surface located on the other side, and a plurality of through holes (12) penetrating between the first surface and the second surface; a plurality of conductive layers (22) continuously arranged at the inner wall surface of the through holes in each of at least some of the plurality of through holes and around the openings of the through holes on the first surface; and a plurality of first grooves (14) that are arranged between the plurality of conductive layers on the first surface to insulate the conductive layers from each other, wherein the center of gravity (C2) of the opening of each through hole is set apart from the center of gravity (C1) of the respective conductive layer on the first surface.

Abstract: Provided is a pressure detection device including: a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element portion, a switching element portion provided on a lower layer side of the magnetoresistance effect element portion, a buffer insulating portion provided between the magnetoresistance effect element portion and the switching element portion, and a conductive portion surrounding a side surface of the buffer insulating portion and electrically connecting the magnetoresistance effect element portion and the switching element portion to each other.

Abstract: According to one embodiment, a switching element includes a first electrode, a second electrode, and a switching material layer provided between the first electrode and the second electrode. The switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi).

Abstract: The present invention appropriately determines a time to replace a responsive glass membrane for measuring a sample containing hydrofluoric acid. A measurement device for measuring a hydrogen ion concentration of a liquid sample containing hydrofluoric acid, the measurement device including a glass electrode that measures a hydrogen ion concentration in the liquid sample, the glass electrode including a responsive glass membrane, a membrane resistance measurement unit that measures a membrane resistance value of the responsive glass membrane, a temperature measurement unit that measures a temperature of an environment in which the responsive glass membrane is disposed, and an output unit that outputs a replacement index for replacing the responsive glass membrane based on the membrane resistance value and the temperature.

Abstract: A system contributing to prevention of unauthorized use of an information code displayed on a screen. In the system, an information code display device cyclically displays a plurality of partial code images on a display screen of a display unit based on a first rule when the first rule is received from a server in response to a first request to the server. Accordingly, an information code reading device captures images of the display screen at imaging intervals according to a second rule which is received from the server by in response to a second request to the server to decode an information code composed of the plurality of images thus captured, according to the second rule.

Abstract: According to one embodiment, a memory device includes a memory cell including a magnetoresistive effect element. The magnetoresistive effect element includes a non-magnetic layer between first and second electrodes in the first direction, a first magnetic layer between the first electrode and the non-magnetic layer, a second magnetic layer between the second electrode and the non-magnetic layer, and a first layer between the second electrode and the second magnetic layer. The first layer includes oxygen and at least one selected from magnesium, transition metal, and lanthanoid, the first layer has a first size in the first direction, the non-magnetic layer has a second size in the first direction. The first size is 1.1 times or more and 2 times or less the second size.

Abstract: According to one embodiment, a memory device includes: a switching element including first and second conductive layers, and a variable resistive layer between the first and second conductive layers. The first or second conductive layers includes a first layer, a second layer between the first layer and the variable resistive layer, and a third layer between the first layer and the second layer. Each of the first and second layers is selected from a layer including carbon, a layer including nitrogen and carbon, a layer including nitrogen and titanium, a layer including nitrogen and tantalum, a layer including tungsten, a layer including nitrogen and tungsten, and a layer including platinum. The third layer includes at least one selected from lithium, sodium, magnesium, calcium, titanium, or lanthanum.

Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0<x<1, 0<y<1, 0<z<1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C1 satisfies x?(3?(3+b)×y?z)/(3+a).

Abstract: There is provided a liquid discharge apparatus including: a conveyer; head chips; a circulation channel; and a controller. Each head chip includes a manifold; a nozzle group, and actuators. Each head chip is configured to execute discharge drive and non-discharge vibration drive. The head chips include: an end head chip; a facing head chip facing the recording medium; and a non-facing head chip not facing the recording medium. The controller is configured to make at least one of a circulation flowing amount of a liquid in the circulation channel in the facing head chip and a frequency of the non-discharge vibration drive by an actuator included in the actuators in the facing head chip larger than those of the non-facing head chip.

Abstract: A semiconductor light-emitting device includes: a substrate having a wiring electrode; a semiconductor light-emitting element mounted on the wiring electrode and having a light-emitting functional layer with an upper surface exposed; a wavelength conversion plate mounted on the light-emitting functional layer and being made of a sintered body including fluorescent material particles and binder particles; and an adhesive layer including a resin medium for adhering a light-incident surface of the wavelength conversion plate to a light output surface of the light-emitting functional layer, and resin particles dispersed in the resin medium. The light-incident surface can expose a sintered surface of the sintered body with a concave portion, and the resin particles are fitted in the concave portion and compressively deformed. The semiconductor light-emitting device is capable of reducing the heat generated from the wavelength conversion plate and of maintaining the high light output.