Abstract: An actuator device includes an actuator substrate having actuators, individual conductors electrically connected with the actuators respectively, and dummy conductors; and a bonding member bonded to a surface of the actuator substrate provided with the individual conductors and the dummy conductors. The individual conductors are aligned in an alignment direction to form a first row and a second row arranged in an orthogonal direction orthogonal to the alignment direction. In a first end portion of the actuator substrate on one side in the alignment direction, first individual conductors are aligned in the alignment direction without intervening second individual conductors therebetween. In a second end portion of the actuator substrate on the other side in the alignment direction, the second individual conductors are aligned in the alignment direction without intervening the first individual conductors therebetween.

Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.

Abstract: According to one embodiment, a method of manufacturing a storage device comprises forming a state change layer on a substrate. The state change layer has first and second resistance states. The state change layer is switchable from one to the other of the first and second resistance states according to a magnitude of a voltage applied thereto. A conductor is formed on an upper surface of the state change layer. The conductor comprises carbon. An upper surface of the conductor is processed to reduce the roughness thereof. A first ferromagnetic material is then formed on the upper surface of the conductor. A nonmagnetic material is formed on an upper surface of the first ferromagnetic material. A second ferromagnetic material is formed on an upper surface of the nonmagnetic material.

Abstract: There is provided a liquid discharge apparatus which includes a channel substrate having a nozzle, a pressure chamber which communicates with the nozzle, an actuator which covers the pressure chamber, and a contact point that is electrically connected to the actuator, and a circuit board which has wires that are to be electrically connected to contact points, and which is adhered to the channel substrate. The channel substrate includes an adhesive wall which is provided with contact points, and which has a surface to which an adhering portion of the circuit board to be adhered to the channel substrate, is adhered, and further includes a wall portion which is provided with a cavity on a side of the adhesive wall, opposite to the surface, and which demarcates the cavity on a side opposite to the surface, of the adhesive wall, and the adhering portion is facing the cavity and the wall portion.

Abstract: The present invention provides a conductive paste for positive electrodes of lithium-ion batteries and a mixture paste for positive electrodes of lithium-ion batteries that are inhibited from increasing in viscosity and gelling, and that have an easy-to-apply viscosity. The conductive paste of the present invention contains a dispersion resin (A), polyvinylidene fluoride (B), conductive carbon (C), a solvent (D), and a dehydrating agent (E).

Abstract: A liquid ejection apparatus, including: first piezoelectric elements arranged on an element-disposed surface in a first direction; a protective cover covering the first piezoelectric elements and including a top wall portion and two side wall portions connected thereto; first wires drawn respectively from the first piezoelectric elements to an outside of the protective cover in a second direction parallel to the element-disposed surface and orthogonal to the first direction and extending on an outer surface of the top wall portion via an outer surface of a corresponding side wall portion; first terminals disposed on the outer surface of the top wall portion and connected respectively to the first wires; and a driver electrically connected to the first terminals, wherein a distance in the first direction between any adjacent two of the first wires on an outer surface of the protective cover is larger than that on the element-disposed surface.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.

Abstract: A memory device includes first and second resistance change elements and first and second double-gate transistors. The first resistance change element includes first and second terminals. The second resistance change element includes a third terminal coupled to the first terminal and a fourth terminal. The first double-gate transistor includes a fifth terminal coupled to the second terminal, a sixth terminal, and a first gate coupled to a first word line and a second gate coupled to a second word line. The second double-gate transistor includes a seventh terminal coupled to the fourth terminal, an eighth element, and a third gate coupled to the first word line and a fourth gate coupled to a third word line.

Abstract: There is provided a method of manufacturing a liquid discharge head, including: forming a stacked body having a structure and a protective member stacked on the structure, providing a first mask on an upper surface of the protective member to cover a through hole; forming a protective film by an atomic layer deposition on a surface defining a liquid flow channel of the stacked body provided with the first mask; and removing the first mask after forming the protective film.

Abstract: According to one embodiment, a method of manufacturing a storage device comprises forming a state change layer on a substrate. The state change layer has first and second resistance states. The state change layer is switchable from one to the other of the first and second resistance states according to a magnitude of a voltage applied thereto. A conductor is formed on an upper surface of the state change layer. The conductor comprises carbon. An upper surface of the conductor is processed to reduce the roughness thereof. A first ferromagnetic material is then formed on the upper surface of the conductor. A nonmagnetic material is formed on an upper surface of the first ferromagnetic material. A second ferromagnetic material is formed on an upper surface of the nonmagnetic material.

Abstract: A thin film forming method for forming a thin film on a workpiece accommodated within a reaction chamber includes a first operation of supplying a first source gas and a second source gas into the reaction chamber, and a second operation of stopping the supply of the first source gas, supplying the second source gas into the reaction chamber and setting an internal pressure of the reaction chamber higher than an internal pressure of the reaction chamber set in the first operation. The first operation and the second operation are alternately repeated a plurality of times.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.

Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.

Abstract: There is provided a liquid discharge head including: a channel substrate including a pressure chamber; a support substrate having a through hole; a piezoelectric element disposed between the channel substrate and the support substrate in a thickness direction of the channel substrate; a drive section disposed on a surface of the support substrate on a side opposite to the piezoelectric element; a trace passing through the through hole of the support substrate, extending on the support substrate toward the drive section, and connected to the piezoelectric element and the drive section; and a reservoir member including a channel communicating with the pressure chamber, and joined to the surface of the support substrate with adhesive. A protrusion or a recess is provided on the surface of the support substrate on the side opposite to the piezoelectric element at a position between the trace and the channel.

Abstract: According to one embodiment, a camera input interface includes a first channel processing circuit, a second channel processing circuit, a selector, and a comparator. The first channel processing circuit is configured to perform image processing to image data from the first input source. The second channel processing circuit is configured to perform image processing to image data from the first input source or the second input source. The selector is provided on an input side of the second channel processing circuit and configured to be switched to either one of the first input source and the second input source. The comparator is configured to compare a first output result output from the first channel processing circuit and a second output result output from the second channel processing circuit with each other.

Abstract: A memory device includes a first element and a second element. The first element includes: first and second ferromagnets; a first nonmagnet; a first conductor; a third ferromagnet; a second conductor, and a fourth ferromagnet. The fourth ferromagnet contains a metallic element and one or more ferromagnetic elements. The second element includes: fifth and sixth ferromagnet; a second nonmagnet; a third conductor; a seventh ferromagnet; a fourth conductor; and a fifth conductor. The fifth conductor contains the metallic element and the one or more ferromagnetic elements of a quantity of 30% or less of a volume of the fifth conductor.

Abstract: An actuator device includes: an actuator including piezoelectric elements arranged in a first direction and first contacts arranged in the first direction; a protector including a first wall opposed to the piezoelectric elements and a second wall coupled to the first wall and joined to a region of the actuator at which the first contacts are disposed; first connection terminals disposed on the first; and first through electrodes formed in the second wall to bring the first contacts and the first connection terminals into conduction with each other. A distance between two of the first through electrodes which respectively correspond to two of the piezoelectric elements which are adjacent to each other in the first direction is greater than a distance in the first direction between the two of the piezoelectric elements which are adjacent to each other in the first direction.

Abstract: A liquid jetting head includes a flow channel substrate formed with pressure chambers, an actuator covering the pressure chambers, and a temperature sensor. A dummy pressure chamber is formed in a surface, of the flow channel substrate, in which the pressure chambers are open. The actuator includes: a vibration plate which covers the pressure chambers and the dummy pressure chamber and which has a first surface facing the pressure chambers and a second surface opposite to the first surface, and a piezoelectric body arranged on the second surface of the vibration plate to face the pressure chambers. The temperature sensor is arranged on the second surface of the vibration plate at a position facing the dummy pressure chamber.