Abstract: A group III nitride semiconductor substrate production method includes preparing a bulk crystal formed of a group III nitride semiconductor single crystal. The group III nitride semiconductor single crystal has one crystalline plane and an other crystalline plane. Hardness of the other crystalline plane is smaller than hardness of the one crystalline plane. The prepared bulk crystal is cut from the other crystalline plane to the one crystalline plane of the bulk crystal.

Abstract: A nitride semiconductor substrate includes two principal surfaces including an upper surface that is a growth face and a lower surface on its opposite side. An FWHM in a surface layer region at depths of from 0 to 250 nm from the upper surface is narrower than an FWHM in an inner region at depths exceeding 5 ?m from the upper surface, where the FWHMs are obtained by X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface.

Abstract: A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

Abstract: Described herein are methods and compositions related to the discovery that the Follistatin-like 1 protein (Fstl-1) has metabolic and cardioprotective effects in vivo. Fstl-1 and portions and derivatives or variants thereof can be used to treat or prevent metabolic diseases or disorders and to treat or prevent cardiac damage caused by interrupted cardiac muscle blood supply.

Abstract: Described herein are methods and compositions related to the discovery that the Follistatin-like 1 protein (Fstl-1) has metabolic and cardioprotective effects in vivo. Fstl-1 and portions and derivatives or variants thereof can be used to treat or prevent metabolic diseases or disorders and to treat or prevent cardiac damage caused by interrupted cardiac muscle blood supply.

Abstract: A method for manufacturing a group III nitride crystal includes a step of mixing a group III source material and ammonia in a reactor including quartz, and growing a group III nitride crystal on a support substrate by a vapor deposition. The group III source material is an organic metal source material containing Al. The organic metal source material is mixed with a hydrogen halide gas and the mixture of the organic metal source material and the hydrogen halide gas is supplied to the reactor.

Abstract: A group III-V nitride-based semiconductor substrate includes a group III-V nitride-based semiconductor crystal. A surface area of the substrate is greater than or equal to 45 cm2. A thickness of the substrate is greater than or equal to 200 ?m. An in-plane dislocation density of the substrate is less than or equal to 2×107 cm?2 in average. The in-plane dislocation density of the substrate is less than or equal to 150% of the average at maximum.

Abstract: A GaN single-crystal substrate has a substrate surface in which polarity inversion zones are included. The number density of the polarity inversion zones in the substrate surface is not more than 20 cm?2. A GaN single crystal production method includes introducing group III and V raw material gases on a substrate, and growing a GaN single crystal on the substrate. The growth temperature is within the range of not less than 1100° C. and not more than 1400° C., the group V to III raw material gas partial pressure ratio (V/III ratio) is within the range of not less than 0.4 and not more than 1, and the number density of polarity inversion zones in a surface of the substrate is not more than 20 cm?2.

Abstract: A nitride semiconductor substrate includes two principal surfaces including an upper surface that is a growth face and a lower surface on its opposite side. An FWHM in a surface layer region at depths of from 0 to 250 nm from the upper surface is narrower than an FWHM in an inner region at depths exceeding 5 ?m from the upper surface, where the FWHMs are obtained by X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface.

Abstract: A manufacturing method of a group III nitride semiconductor crystal is provided, comprising: the step of preparing a seed crystal; and the convex surface growing step of growing the group III nitride semiconductor crystal, with a growth surface of the group III nitride semiconductor crystal constituted only by a plurality of surfaces not vertical to a growth direction, and the growth surface constituted of the plurality of surfaces formed into a convex shape as a whole.

Abstract: A Group III nitride semiconductor substrate is provided, with diameter of 25 mm or more and thickness of 250 ?m or more, wherein in at least an outer edge side part of an outer edge part within 5 mm from an outer edge of the group III nitride semiconductor substrate, stress within a main surface of the group III nitride semiconductor substrate works as a tensile stress, with the tensile stress becoming relatively greater compared to that of a center side part from the outer edge side part of the group III nitride semiconductor substrate.

Abstract: A method of fabricating a group III nitride semiconductor single crystal includes preparing a seed substrate which includes group III nitride semiconductor and has a crystal growth face of single index plane, and epitaxially growing the group III nitride semiconductor single crystal on the crystal growth face, wherein the group III nitride semiconductor single crystal is epitaxially grown while being surrounded by a plurality of crystal surfaces including low-index planes spontaneously formed, and the low-index planes have a structure that each of plane indices showing a crystal plane is not more than 3.

Abstract: A method of making a compound semiconductor substrate includes providing a GaN compound semiconductor single crystal ingot, and cutting the ingot with a cutter to form a GaN single crystal substrate. The cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 160° C. such that a cut surface of the GaN single crystal substrate has an arithmetical mean waviness (Wa) not more than 9 ?m.

Abstract: A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.

Abstract: A method of fabricating a group III nitride semiconductor single crystal includes preparing a seed substrate which includes group III nitride semiconductor and has a crystal growth face of single index plane, and epitaxially growing the group III nitride semiconductor single crystal on the crystal growth face, wherein the group III nitride semiconductor single crystal is epitaxially grown while being surrounded by a plurality of crystal surfaces including low-index planes spontaneously formed, and the low-index planes have a structure that each of plane indices showing a crystal plane is not more than 3.

Abstract: Described herein are methods and compositions related to the discovery that the Follistatin-like 1 protein (Fstl-1) has metabolic and cardioprotective effects in vivo. Fstl-1 and portions and derivatives or variants thereof can be used to treat or prevent metabolic diseases or disorders and to treat or prevent cardiac damage caused by interrupted cardiac muscle blood supply.

Abstract: A Group III nitride semiconductor substrate is formed of a Group III nitride single crystal, and has a diameter of not less than 25.4 mm and a thickness of not less than 150 ?m. The substrate satisfies that a ratio of ??/? is not more than 0.1, where ? is a thermal expansion coefficient calculated from a temperature change in outside dimension of the substrate, and ?? is a difference (???L) between the thermal expansion coefficient ? and a thermal expansion coefficient ?L calculated from a temperature change in lattice constant of the substrate.

Abstract: A group III-V nitride-based semiconductor substrate includes a group III-V nitride-based semiconductor crystal. A surface area of the substrate is greater than or equal to 45 cm2. A thickness of the substrate is greater than or equal to 200 ?m. An in-plane dislocation density of the substrate is less than or equal to 2×107 cm?2 in average. The in-plane dislocation density of the substrate is less than or equal to 150% of the average at maximum.

Abstract: A group III nitride semiconductor substrate production method includes preparing a bulk crystal formed of a group III nitride semiconductor single crystal. The group III nitride semiconductor single crystal has one crystalline plane and an other crystalline plane. Hardness of the other crystalline plane is smaller than hardness of the one crystalline plane. The prepared bulk crystal is cut from the other crystalline plane to the one crystalline plane of the bulk crystal.

Abstract: A moisture curable composition excellent in transparency, operating efficiency and storage stability, and is suitable for use as an adhesive and a sealing material is provided. The moisture curable composition produced by blending 100 parts by weight of a mixture (A) and 2 parts by weight to 300 parts by weight of amorphous powder (B). The mixture (A) comprises (1) a copolymer having reactive silicon groups which can be cross-linked by hydrolysis, whose molecular chain substantially consists of (i) alkylacrylate and/or alkylmethacrylate monomeric units having an alkyl group with 1 to 8 carbon atoms, and (ii) alkylacrylate and/or alkylmethacrylate monomeric units having an alkyl group with 10 or more carbon atoms, and (2) a polymer substantially consisting of oxyalkylene including reactive silicon groups which can be cross-linked by hydrolysis. The amorphous powder (B) has a grain diameter ranging from 0.01 ?m to 300 ?m.