Abstract: A mullite-containing sintered body according to the present invention contains mullite and at least one selected from the group consisting of silicon nitride, silicon oxynitride, and sialon. It is preferable that the mullite-containing sintered body have a thermal expansion coefficient of less than 4.3 ppm/° C. at 40° C. to 400° C., an open porosity of 0.5% or less, and an average grain size of 1.5 ?m or less.

Abstract: In an X-ray diffraction diagram of a cordierite sintered body of the present invention, the ratio of the total of the maximum peak intensities of components other than cordierite components to the peak top intensity of the (110) plane of cordierite is 0.0025 or less. Since having a significantly small amount of different phases other than the cordierite components, this cordierite sintered body has a high surface flatness when the surface thereof is mirror-polished.

Abstract: A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |?CTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.

Abstract: A member for a semiconductor manufacturing apparatus according to the present invention is a member that is to be joined to an aluminum nitride base member. The member is composed of a composite material including principal constituent phases that are aluminum nitride and a pseudopolymorph of aluminum nitride which includes silicon, aluminum, oxygen, and nitrogen. The pseudopolymorph of aluminum nitride has at least one periodic structure selected from a 27R phase and a 21R phase or an X-ray diffraction peak at least at 2?=59.8° to 60.8°. The composite material has a thermal conductivity of 50 W/mK or less at room temperature.

Abstract: The ceramic structure 10 includes a discoid ceramic base 12 and an electrode 14 buried in the ceramic base 12. The ceramic base 12 is a sintered body composed principally of alumina or a rare-earth metal oxide and has a thermal expansion coefficient of 7.5 to 9.5 ppm/K over the range of 40° C. to 1200° C. The electrode 14 is composed principally of metal ruthenium. The electrode 14 may be formed in the shape of a sheet. Alternatively, the electrode 14 may be patterned in the manner of a one-stroke sketch so as to extend over the entire cross section of the ceramic base 12.

Abstract: A MgO-based ceramic film according to the present invention contains crystalline phases of MgO and MgAl2O4, and Al is dissolved in the MgO to form a solid-solution. The ceramic film exhibits a diffraction peak representing the (200) plane of MgO at an angle 2? of more than 42.92° in CuK? XRD measurement. A shoulder preferably appears on the higher angle side of the peak representing the (200) plane of MgO. The mass ratio MgO/Al2O3 of MgO to Al2O3 converted from Mg and Al in terms of oxides is preferably higher than 2.33.

Abstract: A thermal spray coating according to the present invention contains mainly magnesium, aluminum, oxygen, and nitrogen and has, as a main phase, a crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved with magnesium oxide. The thermal spray coating is obtained by thermal spray of powder of a ceramic material containing mainly magnesium, aluminum, oxygen, and nitrogen and having, as a main phase, a crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved with magnesium oxide.

Abstract: The ceramic material of the present invention contains a crystalline phase of a complex oxide containing a Group Il element M and a rare earth element RE, The Group II element M is Sr, ca, or Ba. An XRD diagram of the ceramic material shows a first new peak between peaks derived from the (040) plane and the (320) plane of MRE2O4. Such a ceramic material may be manufactured by, for example, preparing a material containing MRE2O4 or a material capable of reacting in thermal spray flame to produce MRE2O4 as a thermal spray material, and thermally spraying the thermal spray material onto a predetermined object.

Abstract: A thermal spray coating according to the present invention contains mainly magnesium, aluminum, oxygen, and nitrogen and has, as a main phase, a crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved with magnesium oxide. The thermal spray coating is obtained by thermal spray of powder of a ceramic material containing mainly magnesium, aluminum, oxygen, and nitrogen and having, as a main phase, a crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved with magnesium oxide.

Abstract: A first bonding material composition according to the present invention is a bonding material composition used when aluminum nitride sintered bodies containing a rare-earth metal oxide are bonded to each other, in which the bonding material composition contains, in addition to an O element-containing aluminum nitride raw material, (a) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, or (b) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, and a rare-earth metal oxide.

Abstract: A first bonding material composition according to the present invention is a bonding material composition used when aluminum nitride sintered bodies containing a rare-earth metal oxide are bonded to each other, in which the bonding immaterial composition contains, in addition, to an O element-containing aluminum nitride raw material, (a) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, or (b) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, and a rare-earth metal oxide.

Abstract: The present invention provides a ceramic material comprising magnesium, gallium, lithium, and oxygen as main components, wherein a crystal phase of a solid solution attained by dissolving gallium oxide and lithium oxide in magnesium oxide is a main phase. An XRD peak of a (200) plane of the solid solution with CuK? rays preferably appears at 2?=42.91° or more which is larger than an angle at which a peak of a Cubic crystal of magnesium oxide appears, more preferably appears at 2?=42.91° to 43.28°, and further preferably appears at 2?=42.91° to 43.02°. In the ceramic material, a molar ratio Li/Ga of Li to Ga is preferably 0.80 or more and 1.20 or less.

Abstract: In an X-ray diffraction diagram of a cordierite sintered body of the present invention, the ratio of the total of the maximum peak intensities of components other than cordierite components to the peak top intensity of the (110) plane of cordierite is 0.0025 or less. Since having a significantly small amount of different phases other than the cordierite components, this cordierite sintered body has a high surface flatness when the surface thereof is mirror-polished.

Abstract: A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2?=47 to 50° by CuK? X-ray.

Abstract: A ceramic material of the present invention contains magnesium, zirconium, lithium, and oxygen as main components. The crystal phase of a solid solution obtained by dissolving zirconium oxide and lithium oxide in magnesium oxide is a main phase. The XRD peak of a (200) plane of the solid solution with CuK? rays preferably appears at 2?=42.89° or less which is smaller than an angle at which a peak of a cubic crystal of magnesium oxide appears. The XRD peak more preferably appears at 2?=42.38° to 42.89° and further preferably at 2?=42.82° to 42.89°. In the ceramic material, the molar ratio Li/Zr of Li to Zr is preferably in the range of 1.96 or more and 2.33 or less.

Abstract: A mullite sintered body according to the present invention has an impurity element content of 1% by mass or less and contains sintered mullite grains having an average grain size of 8 ?m or less. When a surface of the mullite sintered body is finished by polishing, pores in the surface have an average largest pore length of 0.4 ?m or less. The surface preferably has a center line average surface roughness (Ra) of 3 nm or less. The surface preferably has a maximum peak height (Rp) of 30 nm or less. The number of pores in the surface is preferably 10 or less per unit area of 4 ?m×4 ?m.

Abstract: A heating apparatus 1A includes a susceptor part 9A having a heating face 9a of heating a semiconductor W, and a ring shaped part 6A provided in the outside of the heating face 9a. The ring shaped part 6A is composed of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2?=47 to 50° taken by using CuK? ray.

Abstract: A member for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

Abstract: A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, Ti3SiC2, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

Abstract: A lanthanum boride sintered body includes a phase including lanthanum and silicon at grain boundaries between crystal grains of lanthanum boride. In this lanthanum boride sintered body, the phase exists in various configurations such as a phase present at a triple point of grain boundary, and a phase present along the grain boundary. This phase is based on a lanthanum silicide (represented by the composition formula LaSix (0<x?2)). The lanthanum boride sintered body is fabricated through a sintering step of sintering a lanthanum boride green compact by press-free sintering in an inert atmosphere or under vacuum in the presence of a silicon-containing material around and/or within the green compact. The lanthanum boride sintered body having this structure exhibits a relative density of not less than 92%, and more preferably not less than 94%.