Abstract: A solution separation ring made of a material with adhesion to a processing solution stronger than that of a rear face of a wafer is provided to surround the periphery of a substrate horizontally held by a spin chuck with a slight clearance therebetween. A supply nozzle is moved from one end side to the other end side of the substrate while supplying the processing solution, and discharge ports of the supply nozzle are allowed to get closer to a summit portion of the solution separation ring near the other end side of the substrate. At this time, the processing solutions on the discharge ports and the front face of the substrate which are contiguous with each other by surface tension are separated caused so as to flow toward the solution separation ring side, thereby preventing an excessive processing solution from returning onto the front face of the substrate.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: The present invention is a coating unit for coating a substrate with a coating solution, comprising a coating solution discharge member for discharging the coating solution to the substrate which is positioned in a downward part. A lower surface of the coating solution discharge member is in a shape having a length longer, at least, than the radius of the substrate and having a narrow width. A coating solution discharge port is disposed in a portion of the coating solution discharge member, facing the center of the substrate, while a solvent mist discharge port for discharging a solvent mist of the coating solution is disposed in a portion facing a peripheral portion including an outer edge potion of the substrate, when the coating solution discharge member is positioned above the radius of the substrate.

Abstract: A surface-active agent is applied onto a surface to be processed of a wafer, onto which a chemical solution of an antireflection film is applied, thereby forming an antireflection film with the thickness of, for example, about 100 nm. Subsequently, the surface-active agent is applied onto a surface of the antireflection film, onto which a resist solution is applied, thereby forming a resist film with the thickness of, for example, about 500 nm. By applying a coating solution such as the chemical solution of the antireflection film, the resist solution and the like onto the surface-active agent as described above, the surface tension of the coating solution is decreased by the action of the surface-active agent, and the coating solution spreads approximately parallel to the surface of the wafer along the top surface of the wafer. Thus, the required coating amount of the coating solution is reduced, and the amount of the chemical solution can be saved.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: The present invention has a processing zone having a coating unit for forming a coating film on a substrate, a developing unit for performing development of the substrate, a heat treatment unit for performing heat treatment of the substrate, and a first transfer device for transferring the substrate from/to the coating unit, the developing unit and the heat treatment unit, an interface section in which the substrate is transferred at least on a path between the processing zone and an exposure processing unit outside the system for performing exposure processing for the substrate, a casing for housing the processing zone and the interface section, a gas supply device for supplying an inert gas into the interface section, and an exhaust portion through which an atmosphere in the interface section is discharged, and the heat treatment unit, and a second transfer device for transferring the substrate on a path between the heat treatment unit and the exposure processing unit are disposed in the interface section.

Abstract: The present invention has a processing zone having a coating unit for forming a coating film on a substrate, a developing unit for performing development of the substrate, a heat treatment unit for performing heat treatment of the substrate, and a first transfer device for transferring the substrate from/to the coating unit, the developing unit and the heat treatment unit, an interface section in which the substrate is transferred at least on a path between the processing zone and an exposure processing unit outside the system for performing exposure processing for the substrate, a casing for housing the processing zone and the interface section, a gas supply device for supplying an inert gas into the interface section, and an exhaust portion through which an atmosphere in the interface section is discharged, and the heat treatment unit, and a second transfer device for transferring the substrate on a path between the heat treatment unit and the exposure processing unit are disposed in the interface section.

Abstract: In a coating and developing treatment for a substrate, the present invention comprises the steps of: supplying a coating solution to the substrate to form a coating layer on the substrate; performing a developing treatment for the substrate in the processing zone after it undergoes an exposure processing by an aligner not included in the system; and carrying the substrate into the chamber after the step of forming the coating layer and before the exposure processing and thereafter reducing the pressure inside the airtightly closed chamber to a predetermined pressure to remove impurities adhering to the substrate inside the chamber from the substrate for a predetermined time, wherein the predetermined pressure and the predetermined time are adjusted based on the density of the impurities measured inside the processing zone.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: A substrate transfer system comprising a cassette table for mounting a cassette which has an opening portion for loading and unloading a substrate and a cover detachably provided to the opening portion, process portion for processing the substrate housed in a cassette on the cassette table, a transfer arm mechanism for taking out the substrate from the cassette table, transferring it to process units G1 to G5, and returning a processed substrate to the cassette on the cassette table, partition members provided between the transfer arm mechanism and the cassette table, for separating an atmosphere on the side of the transfer arm mechanism from that on the side of the cassette table, a passage formed in the partition member so as to face the opening portion of the cassette on the cassette table, for passing the substrate taken out from the cassette on the cassette table by the transfer arm mechanism and returning the substrate to the cassette on the cassette table, cassette moving mechanisms for moving the open

Abstract: A substrate transfer system comprising a cassette table for mounting a cassette which has an opening portion for loading and unloading a substrate and a cover detachably provided to the opening portion, process portion for processing the substrate housed in a cassette on the cassette table, a transfer arm mechanism for taking out the substrate from the cassette table, transferring it to process units G1 to G5, and returning a processed substrate to the cassette on the cassette table, partition members provided between the transfer arm mechanism and the cassette table, for separating an atmosphere on the side of the transfer arm mechanism from that on the side of the cassette table, a passage formed in the partition member so as to face the opening portion of the cassette on the cassette table, for passing the substrate taken out from the cassette on the cassette table by the transfer arm mechanism and returning the substrate to the cassette on the cassette table, cassette moving mechanisms for moving the open

Abstract: Nitrogen gas is blown into a developing solution tank, and a developing solution is supplied through a supply nozzle to the surface of a wafer, through a filter unit or the like, with the pressure. The filter unit has a ring-shaped flow path flowing from down upward, an impurity filter provided on the inside thereof, an exhaust passage connected to an uppermost portion of the flow path, and a bubble filter composed of, for example, a hollow fiber membrane, which is provided to block a part of the exhaust passage and has the property of transmitting gas without transmitting liquid. The dissolved nitrogen contained in the developing solution is changed to bubbles by vaporizing in the flow path, and only the bubbles can be removed from the developing solution since the aforesaid bubble filter selectively transmits these bubbles whereby the amount of the developing solution can be saved.

Abstract: Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

Abstract: The present invention is a method for developing a substrate by supplying a developing solution from a developing solution supply nozzle onto a surface of the substrate mounted on a predetermined position, and comprises the steps of moving the developing solution supply nozzle from a standby position of the developing solution supply nozzle outside one end of the substrate to at least the other end of the substrate without supplying the developing solution, and thereafter, moving the developing solution supply nozzle from the other end to at least the one end while supplying the developing solution. Therefore, the developing solution supply nozzle which is used once and has a possibility of a drip of the developing solution does not pass above the substrate, so that the developing solution never drips from the developing solution supply nozzle onto the substrate before and after supplying the developing solution for some reason or other.

Abstract: Discharge ports of a supply nozzle are structured to be able to discharge a processing solution in a horizontal direction, and a guide plate for reducing the discharge pressure of the processing solution and guiding the processing solution to an under substrate is provided at a position facing the discharge ports. Thus, the appearance of micro bubbles at the time of the supply of the processing solution to the surface of the substrate can be inhibited, thereby reducing poor developing.

Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.

Abstract: The present invention relates to a method for performing coating and developing treatment for a substrate, which comprises the steps of: supplying a coating solution to the substrate to form a coating film on the substrate; performing heat treatment for the substrate on which the coating film is formed; cooling the substrate after the heat treatment; performing exposure processing for the coating film formed on the substrate; and developing the substrate after the exposure processing, and further comprises the step of supplying a treatment gas to form a treatment film on a surface of the coating film after the step of forming the coating film and before the step of performing the exposure processing for the substrate.

Abstract: In a coating apparatus for supplying a mixed solution of a resist solution and a thinner onto a wafer from a nozzle, the nozzle is connected to a mixed solution supply pipe, and the resist solution and the thinner are supplied to the mixed solution supply pipe from a resist solution supply pipe and a thinner supply pipe respectively through a junction pipe. The diameter of the junction pipe is set smaller than those of other supply pipes, whereby the resist solution and the thinner can be mixed efficiently in the junction pipe, and as a result the wafer is coated with the mixed solution so that a uniform film thickness can be obtained within the surface of the wafer.

Abstract: The present invention is a system for performing coating and developing treatment for a substrate, which comprises a treatment section having a coating treatment unit for forming a coating film on the substrate, a developing treatment unit for developing the substrate, a thermal treatment unit for performing thermal treatment for the substrate, and a first carrier unit for carrying the substrate into/out of these coating treatment unit, developing treatment unit, and thermal treatment unit. The system of the present invention further comprises an interface section having a second carrier unit for carrying the substrate through a route at least between the treatment section and an exposure processing unit provided outside the system for performing exposure processing for the substrate.

Abstract: In a state where a wafer is held by a wafer holding section and a temperature controlled liquid is discharged to a rim area on a rear face of the wafer from flow channels, a developing solution is heaped on a front face of the wafer. Thereafter, the wafer is rotated for a predetermined period of time in a state where the temperature controlled liquid is discharged to the rim area on the rear face of the wafer from the flow channels, whereby developing is performed. The wafer is heated by the wafer holding section with a large heat capacity in an area close to a center of the wafer, and a liquid film of the temperature controlled liquid is formed in the rim area of the wafer, whereby the wafer is heated. At this time, the wafer is rotated, so that the developing solution is stirred.