Abstract: A current member is disposed above a wafer holding section for holding a wafer and a top plate and a bottom plate of the current member are positioned so that respective air holes are overlapped each other in a vertical direction, and a developing solution is heaped on a front face of the wafer. Thereafter, the developing is performed with the bottom plate of the current member slid in a lateral direction so that the air holes are not overlapped each other in the vertical direction. In this configuration, air streams to the wafer are obstructed during the developing because the air holes in the current member are obstructed in the vertical direction, whereby occurrence of temperature distribution of the developing solution within the plane of the wafer caused by flows of air currents to the wafer is prevented and uniform developing processing can be performed.

Abstract: The present invention is a film forming method for forming a film of a coating solution on a substrate, comprising the steps of spreading the coating solution supplied to a center of the substrate by rotating the substrate, and supplying solvent vapor of the coating solution to the coating solution spread over the substrate while rotating the substrate to thin the film of the coating solution formed on the substrate. Accordingly, it becomes possible that the film of the coating solution which is formed by spreading the coating solution over the substrate is maintained at a low viscosity, and that the film can be further thinned. The necessary quantity of the coating solution can be also reduced. Moreover, since solvent vapor is supplied onto the coating film, by controlling the supply quantity or the supply position of the solvent vapor, the uniformity of the coating solution film can be obtained, and the thickness of the coating solution film can be controlled.

Abstract: When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.

Abstract: A controller controls the temperature of a hot plate and the degree of vacuum in a tightly closed space to a temperature and a pressure at levels at which a thinner contained in a resist applied to a wafer volatilizes and an acid generator, a quencher, and a polymer chain protecting group practically remain in the resist, for example, during heat processing. More specifically, the controller controls the temperature of the hot plate and the degree of vacuum in the tightly closed space to bring the temperature of the hot plate to about 40° C., and the degree of vacuum in the tightly closed space to approximately 5 Torr. Thereby, the heat processing can be performed for the wafer so that the acid generator is uniformly dispersed in the resist, or the quencher is uniformly formed on the front face of the resist without breakage of the polymer chain protecting group.

Abstract: A first cooling unit group and a second cooling unit group are disposed in the vicinity of a resist coating unit group. Each of the first cooling unit group and the second cooling unit group is composed of various cooling units. Each of the cooling units cools a wafer. A first heating unit group and a second heating unit group are disposed in the vicinity of a developing unit group. Each of the first heating unit group and the second heating unit group is composed of various heating units. Each of the heating units heats a wafer. A first conveying unit is disposed between the cooling unit groups. A second conveying unit is disposed between the heating unit groups. A transfer table is disposed between the conveying units. The transfer table temporarily holds a wafer. The first conveying unit conveys a wafer among the resist coating unit group, the transfer table, and the cooling unit groups.

Abstract: A resist coating block is composed of a resist coating unit, a cooling unit group, and a first sub-conveying unit that conveys a wafer W between the resist coating unit and the cooling unit group. A developing block is composed of a developing unit, a cooling unit group, and a second sub-conveying unit that conveys a wafer W between the developing unit and the cooling unit group. Heat insulating panels are disposed to the blocks opposite to heating units. A first main-conveying unit and a second main-conveying unit are disposed between the blocks. The first main conveying unit is disposed between a first heat treatment block and a third heat treatment block. The second main conveying unit is disposed between a second heat treatment block and a fourth heat treatment block. Thus, variation of the film thickness of a resist film coated on a wafer W can be prevented against heat radiated by the heating units.

Abstract: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

Abstract: The present invention is a method for developing a substrate by supplying a developing solution from a developing solution supply nozzle onto a surface of the substrate mounted on a predetermined position, and comprises the steps of moving the developing solution supply nozzle from a standby position of the developing solution supply nozzle outside one end of the substrate to at least the other end of the substrate without supplying the developing solution, and thereafter, moving the developing solution supply nozzle from the other end to at least the one end while supplying the developing solution. Therefore, the developing solution supply nozzle which is used once and has a possibility of a drip of the developing solution does not pass above the substrate, so that the developing solution never drips from the developing solution supply nozzle onto the substrate before and after supplying the developing solution for some reason or other.

Abstract: When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.

Abstract: In a heat processing method for heating a wafer mounted on a base inside a process container to 120° C. with a heat generator buried inside the base, a gas pre-heated to 120° C. by a heater passes through the space above the wafer after being rectified so as to be parallel to the wafer by a rectifying board disposed near a supply vent. Thereby, temperature distribution in the space above the substrate is kept uniform during heat processing.

Abstract: A first transfer device and a second transfer device, each for transferring a wafer, are arranged opposite each other, and a cooling processing unit group is arranged between the first transfer device and the second transfer device. A first thermal processing unit group and a second thermal processing unit group are arranged on both sides of the first transfer device, and a first solution processing unit group and a second solution processing unit are arranged on both sides of the second transfer device. The first transfer device transfers the wafer between the cooling processing unit group, and units included in the first thermal processing unit group and the second thermal processing unit group, and the second transfer device transfers the wafer between the cooling processing unit group, and units included in the first solution processing unit group and the second solution processing unit group.

Abstract: A first conveying unit, a second conveying unit, and a third conveying unit, each of which conveys a wafer, are disposed in parallel in a wafer processing unit. A first heat treatment unit group and a second heat treatment unit group are oppositely disposed with respect to the first conveying unit. A third heat treatment unit group and a fourth heat treatment unit group are oppositely disposed with respect to the third conveying unit. A developing process unit group and a resist coating unit group are oppositely disposed with respect to the second conveying unit. A first transferring table is disposed between the first conveying unit and the second conveying unit. A second transferring table is disposed between the second conveying unit and the third conveying unit. Since the second conveying unit conveys a wafer among the developing process unit group, the resist coating unit group, and each transferring table, thermal variation of the film thickness of a film of processing solution can be suppressed.

Abstract: A method for washing both surfaces of a substrate, comprising (a) a first washing step for washing a front surface of a substrate, which is kept rotated, by bringing a scrubbing member into contact with said front surface of the substrate while supplying a washing liquid onto the front surface, (b) a second washing step for washing a back surface of the substrate, which is kept rotated, by bringing a scrubbing member into contact with said back surface of the substrate while supplying a washing liquid onto the back surface, (c) a heating step for drying under heat the wet surfaces of the substrate, (d) a recipe determining step for determining whether said heating step (c) is performed, at a period between said first washing step (a) and second washing step (b) and at a period after the second washing step (b), whether the heating step (c) is performed only once after the second washing step (b), or whether the heating step (c) is not performed, and (e) a conducting step for performing or not performing the h

Abstract: A substrate transfer system comprising a cassette table for mounting a cassette which has an opening portion for loading and unloading a substrate and a cover detachably provided to the opening portion, process portion for processing the substrate housed in a cassette on the cassette table, a transfer arm mechanism for taking out the substrate from the cassette table, transferring it to process units G1 to G5, and returning a processed substrate to the cassette on the cassette table, partition members provided between the transfer arm mechanism and the cassette table, for separating an atmosphere on the side of the transfer arm mechanism from that on the side of the cassette table, a passage formed in the partition member so as to face the opening portion of the cassette on the cassette table, for passing the substrate taken out from the cassette on the cassette table by the transfer arm mechanism and returning the substrate to the cassette on the cassette table, cassette moving mechanisms for moving the open

Abstract: Disclosed herein is a device for supplying a liquid to a plurality of apparatuses which apply the liquid to substrates to process the substrates. The device comprises a tank containing the liquid, a supply passage for supplying the liquid from the tank to the apparatuses, branch passages connected to the supply passage, for supplying the liquid to liquid-applying members provided in the apparatuses, and valves provided on the branch passages, respectively. The valves are controlled each other, for opening and closing the branch passages such that the liquid-applying member of one apparatus applies the liquid to a substrate while the liquid-applying member of any other apparatus remains to apply the liquid to a substrate.

Abstract: An apparatus and method for scrubbing both surfaces of a substrate which includes a process section having a first unit, a second unit, a main arm mechanism for transferring a substrate into/from the first and second units, a first cassette or a second cassette section for transferring plural cassettes, a first and second sub-arm for transferring a substrate into/from the cassette sections, and controllers, such that a first substrate taken out from the first cassette section is subjected to the first unit and then subjected to the second unit, while a second substrate taken out from the second cassette is subjected to the second unit and then subjected to the first unit.

Abstract: A method for washing both surfaces of a substrate, comprising (a) a first washing step for washing a front surface of a substrate, which is kept rotated, by bringing a scrubbing member into contact with said front surface of the substrate while supplying a washing liquid onto the front surface, (b) a second washing step for washing a back surface of the substrate, which is kept rotated, by bringing a scrubbing member into contact with said back surface of the substrate while supplying a washing liquid onto the back surface, (c) a heating step for drying under heat the wet surfaces of the substrate, (d) a recipe determining step for determining whether said heating step (c) is performed at a period between said first washing step (a) and second washing step (b) and at a period after the second washing step (b), whether the heating step (c) is performed only once after the second washing step (b), or whether the heating step (c) is not performed, and (e) a conducting step for performing or not performing the he

Abstract: A liquid coating system according to the present invention comprises, a liquid supply source, a nozzle having an inlet communicating with the liquid supply source and a substantially linear liquid discharge portion, a pressure feed unit for feeding the liquid under pressure from the liquid supply source to the nozzle by means of compressed gas, a spin chuck for fixedly supporting a semiconductor wafer, an up-and-down cylinder for causing the liquid discharge portion of the nozzle to closely face the wafer on the spin chuck, and a rotating mechanism for rotating the spin chuck. The nozzle includes a liquid reservoir, in which the liquid supplied from the liquid supply source is collected, and a large number of small passages communicating with the liquid reservoir.

Abstract: A processing liquid supply unit comprises a storage tank for storing a processing liquid, a sensor for sensing the amount of processing liquid stored in the storage tank, a refilling mechanism for automatically refilling the processing liquid into the storage tank when the sensor senses that the amount of processing liquid in the storage tank drops below the specified value and a processing liquid delivery mechanism for delivering the processing liquid from the storage tank to an object being processed.