Abstract: A forging press device for valve including an upsetter in which a plurality of primary forming stages are provided, a forging press main body adjacent to the upsetter, that secondarily forms a primary formed workpiece, and a workpiece conveyance/carry-in device which grips and conveys the workpiece, to carry it into the forging press main body, the device in which the workpiece conveyance/carry-in device is composed of a high speed multi jointed robot capable of circling around a vertical shaft, which has an arm (a chuck) gripping the workpiece. In accordance with the invention, it is possible to provide a forging press device for valve in which the number of deliveries of workpiece from the upsetter to the forging press main body is decreased, which speeds up a valve forging line, and improves the production efficiency.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: An inventive automated heat treatment system has a furnace for heat treating forged engine valves, a carry-in mechanism for transporting the forged valves into the furnace, and a carry-out mechanism for transporting heat treated valves out of the furnace. Each of the carry-in mechanism and the carry-out mechanism has a retention mechanism for retaining valves hung, and a transport mechanism for transporting valves to the furnace as they are hung. The furnace has heating means, groups of paired rails for supporting and moving the valves hung in the furnace, and a stopper for controlling the positions of the valves on the rails. The engine valves are maintained hung with their umbrella-shaped portions supported by the respective mechanisms throughout the automated heat treatment processes. Thus, the heat treatment of engine valves is done in a fewer steps than in a conventional system.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A forging press device for valve including an upsetter in which a plurality of primary forming stages are provided, a forging press main body adjacent to the upsetter, that secondarily forms a primary formed workpiece, and a workpiece conveyance/carry-in device which grips and conveys the workpiece, to carry it into the forging press main body, the device in which the workpiece conveyance/carry-in device is composed of a high speed multi jointed robot capable of circling around a vertical shaft, which has an arm (a chuck) gripping the workpiece. In accordance with the invention, it is possible to provide a forging press device for valve in which the number of deliveries of workpiece from the upsetter to the forging press main body is decreased, which speeds up a valve forging line, and improves the production efficiency.

Abstract: A method of efficiently cutting and machining opposite ends of rod members in sequence is provided, which comprises steps of: abutting a grinding wheel (5) against the periphery of a long rod material (10a) placed at a predetermined work position; moving the grinding wheel towards and along the axis of a first portion of the long rod material (10a) in rotation to taper the tail end of the first portion (to be provided as a rod member); and then moving the grinding wheel (5) further towards the axis of the rod material (10a) to cut the first portion off the long rod material and at the same time chamfer the leading end of a second portion of the long rod material in contact with the rear side of the grinding wheel. After removing the first rod member cut off, the sequence of these steps is repeated as needed.

Abstract: An inventive automated heat treatment system has a furnace for heat treating forged engine valves, a carry-in mechanism for transporting the forged valves into the furnace, and a carry-out mechanism for transporting heat treated valves out of the furnace. Each of the carry-in mechanism and the carry-out mechanism has a retention mechanism for retaining valves hung, and a transport mechanism for transporting valves to the furnace as they are hung. The furnace has heating means, groups of paired rails for supporting and moving the valves hung in the furnace, and a stopper for controlling the positions of the valves on the rails. The engine valves are maintained hung with their umbrella-shaped portions supported by the respective mechanisms throughout the automated heat treatment processes. Thus, the heat treatment of engine valves is done in a fewer steps than in a conventional system.

Abstract: A method of efficiently cutting and machining opposite ends of rod members in sequence is provided, which comprises steps of: abutting a grinding wheel (5) against the periphery of a long rod material (10a) placed at a predetermined work position; moving the grinding wheel towards and along the axis of a first portion of the long rod material (10a) in rotation to taper the tail end of the first portion (to be provided as a rod member); and then moving the grinding wheel (5) further towards the axis of the rod material (10a) to cut the first portion off the long rod material and at the same time chamfer the leading end of a second portion of the long rod material in contact with the rear side of the grinding wheel. After removing the first rod member cut off, the sequence of these steps is repeated as needed.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: In apparatus for controlling operation of a four-wheel drive vehicle having a prime mover (engine), drive wheels driven by the prime mover and free wheels, a VC (viscous coupling; torque transferring device) installed between the drive wheels and free wheels to transfer torque generated in response to a difference between inputted and outputted rotation thereof, output of the prime mover is decreased based on a desired rotational speed of the drive wheels driven by the prime mover when calculated difference between inputted and outputted rotation of the VC is equal to or greater than a predetermined value, thereby enabling to control the driving force effectively so as to achieve required vehicle driving performance.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: In apparatus for controlling operation of a four-wheel drive vehicle having a prime mover (engine), drive wheels driven by the prime mover and free wheels, a VC (viscous coupling; torque transferring device) installed between the drive wheels and free wheels to transfer torque generated in response to a difference between inputted and outputted rotation thereof, output of the prime mover is decreased based on a desired rotational speed of the drive wheels driven by the prime mover when calculated difference between inputted and outputted rotation of the VC is equal to or greater than a predetermined value, thereby enabling to control the driving force effectively so as to achieve required vehicle driving performance.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.