Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicate formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such a s molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicate formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicate formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Abstract: A method for producing a semiconductor device, is composed of steps of: covering a lower side of a semiconductor wafer with a heavy metal and disposing the semiconductor wafer in a chamber; causing the heavy metal to diffuse into the semiconductor wafer by heating the semiconductor wafer with a heat source having a small thermal capacity; and thereafter, ceasing to heat with the heat source, then charging the chamber with a cooling gas.

Abstract: A biaxially oriented polyester film which is well balanced between sliding properties and transparency and having an enhanced uniformity in thickness is prepared by a process wherein a polyester, predominantly comprised of polyethylene terephthalate, is extruded into a sheet form extrudate; the extrudate is quenched to a temperature of below Tg to obtain a solidified, substantially amorphous film; the film is drawn in the longitudinal direction at a drawing ratio of larger than 2.4 but smaller than 6.5; the film is quenched; and then, the film is drawn in the transverse direction at a drawing ratio of at least 2.5. The drawing in the longitudinal direction is carried out in two steps wherein:(i) in the first drawing step, the substantially amorphous film is drawn in one or more stages at a total drawing zone length (l.sub.1) of at least 50 mm so that the resulting polyester film possesses a birefringence of 1.times.10.sup.-3 to 12.times.10.sup.