Patents by Inventor Yuji Tsukamoto
Yuji Tsukamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240148895Abstract: An antibody-drug conjugate represented by formula (I): (where Ab is an antibody, X is a group represented by formula (X-1), formula (X-2) or formula (X-3): (where at the left represents the binding site with NH and at the right represents the binding side with D), D is a group represented by formula (D-1) or formula (D-2): (where represents the binding site with X), and n is in the range of about 1 to about 8).Type: ApplicationFiled: August 24, 2023Publication date: May 9, 2024Inventors: Masayuki MIYANO, Yuya NAKAZAWA, Kentaro ISO, Yuki YABE, Hirotatsu UMIHARA, Junichi TAGUCHI, Satoshi INOUE, Shuntaro TSUKAMOTO, Hiroyuki KOGAI, Atsumi YAMAGUCHI, Tsuyoshi AKAGI, Yohei MUKAI, Toshifumi HIRAYAMA, Masaki KATO, Toshiki MOCHIZUKI, Akihiko YAMAMOTO, Yuji YAMAMOTO, Takato SAKURADA
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Patent number: 8450657Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, a substrate support opposing the temperature controlled support base and configured to support the substrate, and one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature. An erosion resistant thermal insulator disposed between the temperature controlled support base and the substrate support, wherein the erosion resistant thermal insulator includes a material composition configured to resist halogen-containing gas corrosion.Type: GrantFiled: September 23, 2010Date of Patent: May 28, 2013Assignee: Tokyo Electron LimitedInventor: Yuji Tsukamoto
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Patent number: 8207476Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.Type: GrantFiled: December 4, 2009Date of Patent: June 26, 2012Assignee: Tokyo Electron LimitedInventors: Yuji Tsukamoto, Eric J. Strang
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Patent number: 8057633Abstract: A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.Type: GrantFiled: March 28, 2006Date of Patent: November 15, 2011Assignee: Tokyo Electron LimitedInventors: Yuji Tsukamoto, Thomas Hamelin, Yasuhisa Kudo
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Patent number: 8034176Abstract: A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.Type: GrantFiled: March 28, 2006Date of Patent: October 11, 2011Assignee: Tokyo Electron LimitedInventors: Yuji Tsukamoto, H. Steven Tomozawa, Sam Yong Kim, Thomas Hamelin
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Patent number: 7952049Abstract: A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support.Type: GrantFiled: October 30, 2007Date of Patent: May 31, 2011Assignee: Tokyo Electron LimitedInventor: Yuji Tsukamoto
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Publication number: 20110011845Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, a substrate support opposing the temperature controlled support base and configured to support the substrate, and one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature. An erosion resistant thermal insulator disposed between the temperature controlled support base and the substrate support, wherein the erosion resistant thermal insulator includes a material composition configured to resist halogen-containing gas corrosion.Type: ApplicationFiled: September 23, 2010Publication date: January 20, 2011Applicant: TOKYO ELECTRON LIMITEDInventor: Yuji TSUKAMOTO
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Patent number: 7838800Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, a substrate support opposing the temperature controlled support base and configured to support the substrate, and one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature. An erosion resistant thermal insulator disposed between the temperature controlled support base and the substrate support, wherein the erosion resistant thermal insulator includes a material composition configured to resist halogen-containing gas corrosion.Type: GrantFiled: September 25, 2006Date of Patent: November 23, 2010Assignee: Tokyo Electron LimitedInventor: Yuji Tsukamoto
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Patent number: 7723648Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.Type: GrantFiled: September 25, 2006Date of Patent: May 25, 2010Assignee: Tokyo Electron LimitedInventors: Yuji Tsukamoto, Eric J. Strang
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Publication number: 20100078424Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.Type: ApplicationFiled: December 4, 2009Publication date: April 1, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: YUJI TSUKAMOTO, ERIC J. STRANG
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Patent number: 7427357Abstract: An object of the present invention is to provide a process for a high-performance upflow anaerobic sludge treatment (methane fermentation treatment) targeting an organic wastewater containing an inorganic sulfur compound and an apparatus therefor. The invention relates to a process for methane fermentation treatment of an organic wastewater containing a sulfur compound, which includes: detecting a concentration of hydrogen sulfide in a biogas generated from a step of methane fermentation treatment; and, conducting a control of subjecting the organic wastewater to a desulfurization treatment operation in the case that the concentration of hydrogen sulfide in the biogas exceeds a predetermined value, and to an apparatus therefor.Type: GrantFiled: July 15, 2004Date of Patent: September 23, 2008Assignee: Ebara CorporationInventors: Kazumasa Kamachi, Yasuhiro Honma, Toshihiro Tanaka, Yuji Tsukamoto
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Publication number: 20080083723Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.Type: ApplicationFiled: September 25, 2006Publication date: April 10, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Yuji Tsukamoto, Eric J. Strang
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Publication number: 20080083724Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, a substrate support opposing the temperature controlled support base and configured to support the substrate, and one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature. An erosion resistant thermal insulator disposed between the temperature controlled support base and the substrate support, wherein the erosion resistant thermal insulator includes a material composition configured to resist halogen-containing gas corrosion.Type: ApplicationFiled: September 25, 2006Publication date: April 10, 2008Applicant: TOKYO ELECTRON LIMITEDInventor: Yuji Tsukamoto
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Publication number: 20080073335Abstract: A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support.Type: ApplicationFiled: October 30, 2007Publication date: March 27, 2008Applicant: TOKYO ELECTRON LIMITEDInventor: Yuji TSUKAMOTO
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Patent number: 7297894Abstract: A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of the substrate, setting the substrate support to a first support temperature corresponding to the first processing temperature of the substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of the substrate, and setting the substrate support to a second support temperature corresponding to the second processing temperature of the substrate.Type: GrantFiled: September 25, 2006Date of Patent: November 20, 2007Assignee: Tokyo Electron LimitedInventor: Yuji Tsukamoto
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Publication number: 20070235138Abstract: A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.Type: ApplicationFiled: March 28, 2006Publication date: October 11, 2007Applicant: TOKYO ELECTON LIMITEDInventors: Yuji Tsukamoto, Thomas Hamelin, Yasuhisu Kudo
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Publication number: 20070235137Abstract: A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.Type: ApplicationFiled: March 28, 2006Publication date: October 11, 2007Applicant: TOKYO ELECTON LIMITEDInventors: Yuji Tsukamoto, H. Tomozawa, Sam Kim, Thomas Hamelin
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Publication number: 20070175822Abstract: An object of the present invention is to provide a process for a high-performance upflow anaerobic sludge treatment (methane fermentation treatment) targeting an organic wastewater containing an inorganic sulfur compound and an apparatus therefor. The invention relates to a process for methane fermentation treatment of an organic wastewater containing a sulfur compound, which includes: detecting a concentration of hydrogen sulfide in a biogas generated from a step of methane fermentation treatment; and, conducting a control of subjecting the organic wastewater to a desulfurization treatment operation in the case that the concentration of hydrogen sulfide in the biogas exceeds a predetermined value, and to an apparatus therefor.Type: ApplicationFiled: July 15, 2004Publication date: August 2, 2007Inventors: Kazumasa Kamachi, Yasuhiro Honma, Toshihiro Tanaka, Yuji Tsukamoto
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Patent number: 7230204Abstract: A substrate holder for supporting a substrate in a processing system and controlling the temperature thereof is described. The substrate holder comprises a first heating element positioned in a first region for elevating the temperature of the first region. A second heating element positioned in a second region is configured to elevate the temperature in the second region. Furthermore, a first controllably insulating element is positioned below the first heating element, and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the first region. A second controllably insulating element is positioned below the second heating element and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the second region.Type: GrantFiled: March 17, 2004Date of Patent: June 12, 2007Assignee: Tokyo Electron LimitedInventors: Andrej Mitrovic, Yuji Tsukamoto
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Patent number: 7164236Abstract: A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, ?i, ?i, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, ?i is the on-time of the RF power for the ith RF feed line, ?i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines.Type: GrantFiled: March 5, 2004Date of Patent: January 16, 2007Assignee: Tokyo Electron LimitedInventors: Andrej S. Mitrovic, Eric J. Strang, Murray D. Sirkis, Bill H. Quon, Richard Parsons, Yuji Tsukamoto