Abstract: A method of power generation for a solid alkaline fuel cell includes the step of exposing a cathode-side surface of the inorganic solid electrolyte to an atmosphere containing carbon dioxide of greater than or equal to 600 ppm and less than or equal to 20000 ppm.

Abstract: The present invention provides a secondary battery, including a positive electrode plate composed of an inorganic material including a positive electrode active material in an oxide form and having a thickness of 25 ?m or more; a negative electrode plate composed of an inorganic material including a negative electrode active material in an oxide form and having a thickness of 25 ?m or more; and an inorganic solid electrolyte layer, wherein the secondary battery is chargeable and dischargeable at a temperature of 100° C. or more. The present invention can provide rapid charge/discharge at a high cycle capacity retention and increase the capacity of the secondary battery.

Abstract: Various useful IC-related applications are provided using all solid lithium secondary batteries. For example, there is provided a power source for integrated circuit (IC) that includes an all-solid-state lithium secondary battery including a positive electrode layer, a solid electrolyte layer, and a negative electrode layer, wherein the all-solid-state lithium secondary battery itself has a function as a bypass capacitor, thereby being capable of supplying a temporarily increased peak current in addition to a steady current.

Abstract: The solid alkaline fuel cell has a cathode that is supplied with an oxidant which contains oxygen, an anode that is supplied with a fuel which contains hydrogen atoms, and an inorganic solid electrolyte that is disposed between the anode and the cathode and that exhibits hydroxide ion conductivity. The inorganic solid electrolyte enables permeation of a fuel in an amount that produces carbon dioxide at the cathode of greater than or equal to 0.04 ?mol/s·cm2 and less than or equal to 2.5 ?mol/s·cm2 per unit surface area of a cathode-side surface.

Abstract: A method of power generation for a solid alkaline fuel cell includes the step of exposing a cathode-side surface of the inorganic solid electrolyte to an atmosphere containing carbon dioxide of greater than or equal to 600 ppm and less than or equal to 20000 ppm.

Abstract: The solid alkaline fuel cell has a cathode that is supplied with an oxidant which contains oxygen, an anode that is supplied with a fuel which contains hydrogen atoms, and an inorganic solid electrolyte that is disposed between the anode and the cathode and that exhibits hydroxide ion conductivity. The inorganic solid electrolyte enables permeation of water of greater than or equal to 80 ?g/min·cm2 and less than or equal to 5400 ?g/min·cm2 per unit surface area of a cathode-side surface.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light by itself and a grating device providing an external resonator with the light source. The system performs oscillation in single mode. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (5) are satisfied.

Abstract: An evanescent light generation element for oscillating evanescent light from an optical waveguide to a clad layer, including a 0.1 ?m-10 ?m thin layer composed of a ferroelectric single crystal or oriented crystal having first and second principal surfaces, and incident side end and exit side end surfaces. A ridge optical waveguide is formed in the thin layer and extends between the incident and exit side end surfaces of the thin layer. At least a pair of grooves is formed on both sides of the ridge optical waveguide in the thin layer and opened at the first principal surface of the thin layer. A clad layer is provided on the first principal surface or the second principal surface. A width of the ridge optical waveguide at the exit side end surface is less than a width of the ridge optical waveguide at the incident side end surface.

Abstract: An optical device includes a semiconductor laser light source, a grating element and an optical transmission element. The grating element includes a ridge-type optical waveguide having an incident surface to which a semiconductor laser light is incident and an emitting surface from which an outgoing light having a desired wavelength is emitted, and a Bragg grating formed in the ridge-type optical waveguide. The light transmission element includes an optical transmission part having an incident surface to which the outgoing light from the ridge-type optical waveguide is incident. A near-field diameter in a horizontal direction at the incident surface of the optical transmission part is greater than a near-field diameter in the horizontal direction at the emitting surface of said ridge-type optical waveguide.

Abstract: Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

Abstract: An optical device includes a semiconductor laser light source, a grating element and an optical transmission element. The grating element includes a ridge-type optical waveguide having an incident surface to which a semiconductor laser light is incident and an emitting surface from which an outgoing light having a desired wavelength is emitted, and a Bragg grating formed in the ridge-type optical waveguide. The light transmission element includes an optical transmission part having an incident surface to which the outgoing light from the ridge-type optical waveguide is incident. A near-field diameter in a horizontal direction at the incident surface of the optical transmission part is greater than a near-field diameter in the horizontal direction at the emitting surface of said ridge-type optical waveguide.

Abstract: An AlN crystal preparation method includes using at least one element excluding Si that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN. In the preparation method, a composition including at least Al and the element is melted. Al vapor and nitrogen gas are reacted at a prescribed reaction temperature. AlN crystals are formed.

Abstract: A voltage nonlinear resistive element includes a resistor containing a joined body in which a zinc oxide ceramic layer composed mainly of zinc oxide and having a volume resistivity of 1.0×10?1 ?cm or less is joined to a bismuth oxide layer composed mainly of bismuth oxide, and a pair of electrodes disposed on the resistor such that an electrically conductive path passes through a joint surface between the zinc oxide ceramic layer and the bismuth oxide layer. In this element, the zinc oxide ceramic layer of the joined body has a lower volume resistivity than before. This can result in a lower clamping voltage in a high-current region than before.

Abstract: The voltage nonlinear resistive element includes a resistor containing a joined body in which a zinc oxide ceramic layer composed mainly of zinc oxide and having a volume resistivity of less than 1.0×10?2 ?cm is joined to a rare-earth metal oxide layer composed mainly of a rare-earth metal oxide, and a pair of electrodes disposed on the resistor such that an electrically conductive path passes through a junction between the zinc oxide ceramic layer and the rare-earth metal oxide layer. In this element, the zinc oxide ceramic layer of the joined body has a lower volume resistivity than before. This can result in a lower clamping voltage in a high electric current region than before.

Abstract: Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: A semiconductor light source includes an active layer oscillating a semiconductor laser light. The grating device includes a ridge type optical waveguide comprising an incident face to which said semiconductor laser light is made incident and an emitting face for emitting an emitted light having a desired wavelength, a Bragg grating comprising convexes and concaves and formed in said ridge type optical waveguide, and an emitting side propagating portion disposed between the incident face and said Bragg grating. The system oscillates the laser in a reflection wavelength range of said Bragg grating. A width of the optical waveguide in the Bragg grating and a width of the optical waveguide at the emitting face are different from each other.

Abstract: Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light by itself and a grating device providing an external resonator with the light source. The system performs oscillation in single mode. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (5) are satisfied.