Abstract: A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.

Abstract: A light irradiation apparatus includes a light modulation element which modulates a phase of an incident light beam to obtain a V-shaped light intensity distribution having a bottom portion of a minimum light intensity, and an image formation optical system which applies the modulated light beam from the light modulation element to an irradiation target surface in such a manner that the V-shaped light intensity distribution is provided on the irradiation target surface. The light modulation element has such a complex amplitude transmittance distribution that a secondary derivative of a phase value of a complex amplitude distribution becomes substantially zero at the bottom portion of the V-shaped light intensity distribution in an image space of the image formation optical system.

Abstract: The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.

Abstract: An aberration measurement apparatus measures the aberration of an imaging optical system. The apparatus includes an illumination system, a separation member, and a measurement unit. The illumination system supplies the imaging optical system with measurement light used to measure an aberration of the imaging optical system and background light different from the measurement light. The separation member separates the measurement light and the background light which have passed through the imaging optical system. The measurement unit measures the aberration of the imaging optical system on the basis of the measurement light separated by the separation member.

Abstract: The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.

Abstract: A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an inverse peak at which the light intensity is minimum, wherein a light intensity value ? (standardized value) in the inverse peak when a maximum value of the light intensity in the light intensity distribution with the inverse peak pattern is standardized as 1 is set to 0.2?value ??0.8.

Abstract: A light application apparatus includes an optical modulation element provided with a plurality of phase steps, a light beam which is entered into the optical modulation element being phase-modulated by the phase steps and exits from the optical modulation element as a light beam having a first light intensity distribution. An optical system is arranged between the optical modulation element and an predetermined plane. The optical system divides the phase-modulated light beam into at least two light fluxes having second and third light intensity distributions and different optical characteristics from each other, and projects a light beam including the divided two light fluxes, the light intensity distributions of the projected light fluxes being combined with each other, so that the projected light beam has a fourth light intensity distribution with an inverse peak shape on the predetermined plane and enters the predetermined plane.

Abstract: The hologram recording sheet according to the invention is made up of a base film and hologram sensitive materials sensitive to different wavelength regions formed therein in a desired pattern, or a film and at least two hologram recording sensitive materials sensitive to different wavelength regions laminated on the film with a transparent plastic spacer layer located therebetween, thereby enabling the required diffraction light wavelengths to be recorded on the required sites without producing unnecessary interference fringes. At least two hologram recording sensitive materials sensitive to different wavelength regions are formed on different sites on a film in dotted or striped configuration, the size of which is up to 200 mm or at least twice as large as the thickness of the sensitive material layers, thereby enabling regions diffracting light of different wavelengths to be formed in the form of independent sets of interference fringes.

Abstract: A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

Abstract: An apparatus for producing a hologram mask. The apparatus includes a first object light at least partially transmittable through a first original mask having a light transmitting screening pattern, and a first reference light having a first phase difference between it and the first object light. The first object and reference lights cause interference patterns to be recorded a hologram recording material, as do a second object light at least partially transmittable through a second original mask having a light transmitting screening pattern, and a second reference light having a second phase difference between it and the second object light where the second phase difference is not the same as the first phase difference. The resulting first and second original mask images recorded in the hologram recording material can be simultaneously replayed to produce an exposed pattern approximating an exposed pattern of a non-holographic phase shifting photomask.

Abstract: The hologram recording sheet according to the invention is made up of a base film and hologram sensitive materials sensitive to different wavelength regions formed therein in a desired pattern, or a film and at least two hologram recording sensitive materials sensitive to different wavelength regions laminated on the film with a transparent plastic spacer layer located therebetween, thereby enabling the required diffraction light wavelengths to be recorded on the required sites without producing unnecessary interference fringes. At least two hologram recording sensitive materials sensitive to different wavelength regions are formed on different sites on a film in dotted or striped configuration, the size of which is up to 200 mm or at least twice as large as the thickness of the sensitive material layers, thereby enabling regions diffracting light of different wavelengths to be formed in the form of independent sets of interference fringes.

Abstract: A photoirradiation apparatus includes an optical modulation element which phase-modulates light, an illumination system to illuminate the optical modulation element, and an imaging optical system which applies the phase-modulated light to a non-single-crystal semiconductor film to form a predetermined light intensity distribution with a strip-like repetitive region having long sides adjacent to each other. The light intensity distribution has a distribution which is downwards convex along a center line in a short side direction and a center line in a long side direction of the repetitive region. The light intensity distribution includes isointensity lines each bent to form a projection from a center of the repetitive region outward in the long side direction. A radius of curvature of an end of at least one isointensity line is not more than 0.3 ?m. A pitch of the repetitive region in the short side direction is not more than 2 ?m.

Abstract: A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.

Abstract: A problem of a decrease in transmissive light, which partly occurs at a boundary between two polarization modulation regions of a polarized phase shift mask, is solved. A photomask for use in an exposure apparatus which forms an exposure pattern by illumination includes at least two polarization modulation regions which produce mutually incoherent polarized light components and adjoin each other, at least two phase modulation regions which impart a phase difference of 180° and adjoin each other, and amplitude modulation regions which decrease transmittance. A contact line between the polarization modulation regions and a contact line between the phase modulation regions are located at a corresponding position, and the amplitude modulation regions are provided on both sides of the common contact line, with a predetermined distance from the common contact line.

Abstract: A method of exposing a surface to be exposed and an attenuated type phase shift mask for use in the method are provided herein. The attenuated type phase shift mask has a reference area allowing a light radiated from a light source to pass through and an amplitude and phase modulation area allowing a part of said light to pass through. The phase modulation amount of the amplitude and phase modulation area relative to the reference area of the attenuated type phase shift mask is {360°×n+(182° to 203°)} (n is an integer).

Abstract: The hologram recording sheet according to the invention is made up of a base film and hologram sensitive materials sensitive to different wavelength regions formed therein in a desired pattern, or a film and at least two hologram recording sensitive materials sensitive to different wavelength regions laminated on the film with a transparent plastic spacer layer located therebetween, thereby enabling the required diffraction light wavelengths to be recorded on the required sites without producing unnecessary interference fringes. At least two hologram recording sensitive materials sensitive to different wavelength regions are formed on different sites on a film in dotted or striped configuration, the size of which is up to 200 mm or at least twice as large as the thickness of the sensitive material layers, thereby enabling regions diffracting light of different wavelengths to be formed in the form of independent sets of interference fringes.

Abstract: A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each position.

Abstract: A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

Abstract: A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

Abstract: A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.