Abstract: According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.

Abstract: In a substrate processing method according to an embodiment, a surface of an object to be polished disposed on a substrate is polished on a polishing pad supplied with slurry. After the polishing process using the slurry, the surface of the object to be polished on the polishing pad is polished, while supplying water on the polishing pad where a residue including the slurry or a sludge of the polishing pad adhered. After the polishing process using the water, the surface of the object to be polished is cleaned on the polishing pad by supplying rinse liquid on the polishing pad.

Abstract: According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.

Abstract: According to an embodiment, a method of manufacturing a semiconductor device includes forming a wiring groove on an insulating film; forming a barrier metal layer and a metal layer; polishing the metal layer by applying a first load on the metal layer; and subsequently polishing the metal layer while applying a second load larger than the first load on the metal layer and spraying a gas onto a polishing pad. The polishing pad is in contact with the metal layer. The barrier metal layer covers an upper surface of the insulating film and an inner surface of the wiring groove, and the metal layer fills an inside of the wiring groove and covers the barrier metal layer.

Abstract: According to one embodiment, a planarizing method is proposed. In the planarizing method, a surface to be processed of an object to be processed including a silicon oxide film is planarized in a processing solution by bringing the surface to be processed into contact with or close proximity with the surface of a solid-state plate on which fluorine is adsorbed. The bonding energy between fluorine and the solid-state plate is lower than that between fluorine and silicon.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO2, planarizing the surface of the to-be-processed film, and etching the planarized surface of the to-be-processed film.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO2, planarizing the surface of the to-be-processed film, and etching the planarized surface of the to-be-processed film.

Abstract: According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.

Abstract: According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

Abstract: According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

Abstract: According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.

Abstract: According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

Abstract: There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 ?m, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 ?m, and a surfactant having a hydrophilic moiety.

Abstract: According to one embodiment, a semiconductor device manufacturing method comprises forming an interlayer dielectric film on a semiconductor substrate, forming a film on the interlayer dielectric film to cover a recess and projection formed on a surface of the interlayer dielectric film, polishing the film by CMP to expose the interlayer dielectric film, and etching the film and the interlayer dielectric film such that etching rates of the film and the interlayer dielectric film are equal.

Abstract: According to an embodiment, a method of manufacturing a semiconductor device includes forming a wiring groove on an insulating film; forming a barrier metal layer and a metal layer; polishing the metal layer by applying a first load on the metal layer; and subsequently polishing the metal layer while applying a second load larger than the first load on the metal layer and spraying a gas onto a polishing pad. The polishing pad is in contact with the metal layer. The barrier metal layer covers an upper surface of the insulating film and an inner surface of the wiring groove, and the metal layer fills an inside of the wiring groove and covers the barrier metal layer.

Abstract: According to an embodiment, a method for manufacturing a semiconductor device includes polishing a metal layer provided on a surface of a wafer, while supplying slurry to a polishing pad and spraying gas to the polishing pad. The slurry includes an inorganic particle, a resin particle, an oxidant for oxidizing the metal layer, a complexing agent for forming an organic complex on a surface of the metal layer, and a surfactant for forming a hydrophilic film on a surface of the organic complex. The resin particle includes a functional group on a surface, the functional group having a same kind of polarity as that of the inorganic particle. The resin particle contains polystyrene incorporated at a concentration of 0.001% by weight or more and 0.1% by weight or less, and has an average particle diameter of 200 nm or more and 1 ?m or less.

Abstract: According to one embodiment, a semiconductor device manufacturing method comprises forming a film to be polished on a semiconductor substrate, and performing a CMP method on the film to be polished. The CMP method includes polishing the film to be polished by bringing a surface of the film to be polished into contact with a surface of a polishing pad having a negative Rsk value.

Abstract: According to one embodiment, a semiconductor device manufacturing method comprises conditioning a polishing pad by pressing a dresser against a surface of the polishing pad while keeping a surface temperature of the polishing pad at 40° C. or higher, and chemically mechanically polishing a polishing target film formed on a semiconductor substrate by pressing a surface of the polishing target film against the surface of the polishing pad having a negative Rsk value.