Abstract: A memory device, for executing an anneal computation with first state and a second state. The memory device includes a first memory array, a second memory array, a control circuit, a sensing circuit and a processing circuit. the control circuit selects a first horizontal row of memory units from the first memory array, and selects a second horizontal row of memory units from the second memory array. The sensing circuit computes a local energy value of the first state according to the current generated by the memory units of the first horizontal row, and computes a local energy value of the second state according to the current generated by the memory units of the second horizontal row. The processing circuit updates the first state and/or the second state according to the local energy value of the first state and the local energy value of the second state.

Abstract: A method for standardizing image annotation includes receiving a defect pattern; marking an image according to the defect pattern to generate a first judgement result; marking the image according to the defect pattern to generate a second judgement result; comparing the first judgement result and the second judgement result to obtain a comparison result; and updating the defect pattern according to the comparison result to standardize the defect pattern. The method for standardizing image annotation of the present specification can improve the marking stability of the training data of a trained image recognition algorithm, thereby improving the accuracy of image recognition of the trained image recognition algorithm.

Abstract: A method of measuring hematocrit is provided. The method for measuring hematocrit includes the following steps. A test strip is provided. The test strip includes a reaction region and a pair of electrodes disposed in the reaction region. A whole blood sample is entered to the reaction region. After the whole blood sample enters the reaction region, a plurality of sets of square wave voltages are intermittently applied to the pair of electrodes based on a square wave voltammetry method to obtain a plurality of feedbacks related to hematocrit. An interval between two adjacent sets of square wave voltages ranges from 0.1 seconds to 4 seconds. A feedback of an n-th set of square wave voltages is obtained to calculate a hematocrit value of the whole blood sample and n is a positive integer greater than 1. A hematocrit value is calculated according to the feedback.

Abstract: A memory device, for executing an anneal computation with first state and a second state. The memory device includes a first memory array, a second memory array, a control circuit, a sensing circuit and a processing circuit. the control circuit selects a first horizontal row of memory units from the first memory array, and selects a second horizontal row of memory units from the second memory array. The sensing circuit computes a local energy value of the first state according to the current generated by the memory units of the first horizontal row, and computes a local energy value of the second state according to the current generated by the memory units of the second horizontal row. The processing circuit updates the first state and/or the second state according to the local energy value of the first state and the local energy value of the second state.

Abstract: Embodiments provide for automated testing of an Application Under Test (AUT) that utilizes an infinite scroll element. Automated testing of the AUT can comprise executing one or more test scripts on the AUT which can present a user interface including a plurality of elements and the test scripts can perform one or more functional tests on the AUT through the plurality of elements of the user interface. During performance of the one or more functional tests, a scroll event associated with an element of the user interface can be detected and a determination can be made as to whether the element associated with the scroll event is an infinite scroll element. In response to determining the element is an infinite scroll element, a set of test results for the functional test can be recorded including results for the infinite scroll element and an interaction with the infinite scroll element.

Abstract: A memory device and a computing method thereof are provided in the present disclosure. The computing method includes the following steps. A plurality of input-values of a model computation are respectively received through a plurality of first-word-lines of a memory array. Inverted logic values of the input-values are respectively received through a plurality of second-word-lines. The input-values are respectively received through a plurality of first-bit-lines. The inverted logic values are respectively received through a plurality of second-bit-lines. Logic XNOR operation is performed according to each of the input-values and each of the inverted values to obtain a first computation result, and multiplied with one of self-coefficients or one of mutual coefficients of the model computation to obtain a plurality of output-values. The output-values are outputted through a plurality of common-source-lines.

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a substrate, a via, a liner layer, a barrier layer, and a conductor. The via penetrates through the substrate. The liner layer is formed on a sidewall of the via. The barrier layer is formed on the liner layer. The barrier layer comprises a conductive 2D material. The conductor fills a remaining space of the via.

Abstract: A TCAM comprises a plurality of first search lines, a plurality of second search lines, a plurality of memory cell strings and one or more current sensing units. The memory cell strings comprise a plurality of memory cells. Each of the memory cells is coupled to one of the first search lines and one of the second search lines. The current sensing units, coupled to the memory cell strings. In a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units.

Abstract: An image of a user interface of a device is captured. A graphical object is identified in the image of the user interface. For example, a menu item or a text object is identified in the image of the user interface. An Artificial Intelligence (AI) process is used to determine a confidence score for the graphical object; the confidence score identifies a confidence of how likely a type of the graphical object can be identified. In response to the first confidence score not meeting a threshold, a zoomed in image of the graphical object is taken or a zoomed-out image of the graphical object is taken. The zoomed in image or the zoomed-out image is used to increase the confidence score to better identify the type of the graphical object.

Abstract: Embodiments provide for automated testing of an Application Under Test (AUT) that utilizes an infinite scroll element. Automated testing of the AUT can comprise executing one or more test scripts on the AUT which can present a user interface including a plurality of elements and the test scripts can perform one or more functional tests on the AUT through the plurality of elements of the user interface. During performance of the one or more functional tests, a scroll event associated with an element of the user interface can be detected and a determination can be made as to whether the element associated with the scroll event is an infinite scroll element. In response to determining the element is an infinite scroll element, a set of test results for the functional test can be recorded including results for the infinite scroll element and an interaction with the infinite scroll element.

Abstract: A memory device and an operation method thereof are provided. The memory device comprises: a memory array including a plurality of memory cells; a plurality of bit lines coupled to the memory array; a plurality of word lines coupled to the memory array; and a plurality of conductance controllable units coupled to the memory array; wherein a memory cell group and at least one conductance controllable unit among the conductance controllable units form a logic operation unit, and a logic operation function of the logic operation unit is determined by an equivalent conductance of the at least one conductance controllable unit.

Abstract: A device includes a substrate, a channel layer, a barrier layer, a gate electrode, and source/drain contacts. The channel layer is made of transition metal dichalcogenide. The barrier layer is over the channel layer. The gate electrode is over the barrier layer. The source/drain contacts are on opposite sides of the gate electrode and over the barrier layer.

Abstract: A memory device and an operation method thereof are provided. The memory device comprises: a memory array including a plurality of memory cells; a plurality of bit lines coupled to the memory array; a plurality of word lines coupled to the memory array; and a plurality of conductance controllable units coupled to the memory array; wherein a memory cell group and at least one conductance controllable unit among the conductance controllable units form a logic operation unit, and a logic operation function of the logic operation unit is determined by an equivalent conductance of the at least one conductance controllable unit.

Abstract: A data recognition apparatus and a recognition method are provided. The data recognition apparatus includes a data augmentation device, a feature extractor, and a comparator. The data augmentation device receives a plurality of target information and performs augmentation on each of the target information to generate a plurality of augmented target information. The feature extractor receives queried information and the augmented target information to extract features of the augmented target information and the queried information to respectively generate a plurality of augmented target feature values and a queried feature value. The comparator generates a recognition result according to the queried feature value and the augmented target feature values.

Abstract: A semiconductor device includes a substrate, a channel stack, source/drain contacts, and a gate electrode. The channel stack is over the substrate and includes a 2D channel layer and a barrier layer. An energy band gap of the barrier layer is greater than an energy band gap of the 2D channel layer. The source/drain contacts are in contact with the channel stack. The gate electrode is above the substrate.

Abstract: A method for standardizing image annotation includes receiving a defect pattern; marking an image according to the defect pattern to generate a first judgement result; marking the image according to the defect pattern to generate a second judgement result; comparing the first judgement result and the second judgement result to obtain a comparison result; and updating the defect pattern according to the comparison result to standardize the defect pattern. The method for standardizing image annotation of the present specification can improve the marking stability of the training data of a trained image recognition algorithm, thereby improving the accuracy of image recognition of the trained image recognition algorithm.

Abstract: A TCAM comprises a plurality of first search lines, a plurality of second search lines, a plurality of memory cell strings and one or more current sensing units. The memory cell strings comprise a plurality of memory cells. Each of the memory cells is coupled to one of the first search lines and one of the second search lines. The current sensing units, coupled to the memory cell strings. In a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units.

Abstract: A testing device for emergency lighting equipment including a main control unit and at least one control module, where each of the at least one control module is used to check operational readiness of an emergency lighting device, and the main control unit and the at least one control module are all connected to a network to form a control system for a smart phone or a building security monitoring system to perform a remote inspection operation on at least one aforementioned emergency lighting device via the network.

Abstract: An inspection device including a switch, a photo sensing element and a control module, where the switch is coupled between an alternating current power source and an emergency lighting device and is switched by the control module; the photo sensing element is used for sensing a lighting state of the emergency lighting device; and the control module is used to receive a command from a handheld device and transmit a detection result to the handheld device via a wireless communication.