Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.

Abstract: Systems and methods provide laser pulse equalization at different pulse repetition frequencies (PRFs). After initially pumping a lasing medium from a first pumping level to a peak pumping level, a controller may cause a pump source to continue pumping the lasing medium according to a pulse equalization pumping curve. The equalization pumping curve may be determined based on testing laser pulse parameters at different PRFs to achieve an optimal equalization result of the pulse parameters. The optimization metric used to evaluate various equalization pumping curves may include a consistency of the pulse energy level, peak power level, and/or pulse width of the laser under different PRFs. The equalization pumping curve may be a descending curve from the peak pumping level to the first pumping level. The equalization pumping curve may be a linearly declining curve, a substantially exponentially declining curve, a parametrically declining curve, or any other curve type.

Abstract: An improved method and apparatus for drilling vias in electronic substrates with laser pulses is presented which uses one or more tailored pulses to reduce debris remaining in the via while maintaining system throughput and avoiding damage to the substrate. A tailored pulse is a laser pulse that features a power spike having a peak power 10% higher than the average power of the pulse and lasting less than 50% of the duration of the pulse. Methods and apparatuses for creating tailored pulses by slicing longer duration pulses are shown.

Abstract: Systems and methods for processing an electrically conductive link in an integrated circuit use a series of laser pulses having different pulse widths to remove different portions of a target structure without substantially damaging a material underlying the electrically conductive link. In one embodiment, an ultrafast laser pulse or bundle of ultrafast laser pulses removes an overlying passivation layer in a target area and a first portion of link material. Then, a nanosecond laser pulse removes a second portion of the link material to sever an electrical connection between two nodes in the integrated circuit. The nanosecond laser pulse is configured to reduce or eliminate damage to the underlying material.

Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

Abstract: A method of and an apparatus for drilling blind vias with selectable tapers in multilayer electronic circuits permit forming electrical connections between layers while maintaining quality and throughput. The method relies on recognizing that the top diameter of the via and the bottom diameter of the via, which define the taper, are functions of two separate sets of equations. Simultaneous solution of these equations yields a solution space that enables optimization of throughput while maintaining selected taper and quality using temporally unmodified Q-switched CO2 laser pulses with identical pulse parameters. Real time pulse tailoring is not required; therefore, system complexity and cost may be reduced.

Abstract: Dual-beam laser outputs, preferably derived from a single laser beam, improve the quality of the sidewalls of vias drilled in a target material, such as printed circuit board, comprising fiber-reinforced resin. Two embodiments each use two laser output components to remove a portion of target material from a target material location of a workpiece and rapidly clean remnants of the target material bonded to a metal layer underlying the target material location at a material removal rate. A first embodiment entails directing for incidence on a portion of the target material at the target material location a processing laser output having first and second components characterized by respective first and second wavelengths. A second embodiment entails directing for incidence on a portion of the target material at the target material location a processing laser output having first and second components characterized by respective first and pulse widths.

Abstract: A solution to an interference effect problem associated with laser processing of target structures entails adjusting laser pulse energy or other laser beam parameter, such as laser pulse temporal shape, based on light reflection information of the target structure and passivation layers stacked across a wafer surface or among multiple wafers in a group of wafers. Laser beam reflection measurements on a target link measurement structure and in a neighboring passivation layer area unoccupied by a link enable calculation of the laser pulse energy adjustment for a more consistent processing result without causing damage to the wafer. For thin film trimming on a wafer, similar reflection measurement information of the laser beam incident on the thin film structure and the passivation layer structure with no thin film present can also deliver the needed information for laser parameter selection to ensure better processing quality.

Abstract: A simultaneously mode-locked, Q-switched laser is configured to prevent loss of mode lock during laser operation. A preferred embodiment prevents loss of mode lock by operating the laser between the Q-switched pulses with a residual level of laser power sufficient to maintain a mode-locked state. The residual laser power output can be blocked by a pulse picking device.

Abstract: A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.

Abstract: A specially shaped laser pulse energy profile characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size.

Abstract: A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.

Abstract: A plurality of subresonators (12, 14), having different design configurations, share a common resonator section (18) such that the lasing action can be substantially synchronized to provide coherent laser pulses that merge the different respective pulse energy profile and/or pulse width characteristics imparted by the configurations of the subresonators (12, 14). The subresonators (12, 14) may share a laser medium (42) in the common section, or each distinct subresonator section (28, 36) may have its own laser medium (42). Exemplary long and short subresonators (12, 14) generate specially tailored laser pulses having a short rise time and a long pulse width at one wavelength or two different wavelengths that may be beneficial for a variety of laser and micromachining applications including memory link processing.

Abstract: A plurality of subresonators (12, 14), having different design configurations, share a common resonator section (18) such that the lasing action can be substantially synchronized to provide coherent laser pulses that merge the different respective pulse energy profile and/or pulse width characteristics imparted by the configurations of the subresonators (12, 14). The subresonators (12, 14) may share a laser medium (42) in the common section, or each distinct subresonator section (28, 36) may have its own laser medium (42). Exemplary long and short subresonators (12, 14) generate specially tailored laser pulses having a short rise time and a long pulse width at one wavelength or two different wavelengths that may be beneficial for a variety of laser and micromachining applications including memory link processing.

Abstract: A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic or ceramic-like substrate such that a portion of the thickness of the substrate is removed. The UV laser beam forms a scribe line in the substrate without appreciable substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the substrate. Consequently, multiple depthwise cracks propagate into the thickness of the substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean fracture of the substrate into separate circuit components. The formation of this region facilitates higher precision fracture of the substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.

Abstract: A solid-state laser (10) has a laser resonator (20) with output ports (22) at both ends to provide two separate laser micromachining beams (42). A set of wavelength converters (26) can be employed to convert the laser machining beams (42) to harmonic wavelength outputs, thus reducing the risk of damage to the wavelength converters and enabling higher total average harmonic power to be generated from a single laser. The laser machining beams (42) can be different to perform different laser operations independently or can be adapted to have substantially identical parameters to permit simultaneous parallel high-quality laser operations on substantially identical workpieces (54), or the laser machining beams (42) can be combined to provide a single laser system output (42e). The two laser machining beams (42) can be further split or multiplexed to suit particular applications.