Abstract: A plurality of subresonators (12, 14), having different design configurations, share a common resonator section (18) such that the lasing action can be substantially synchronized to provide coherent laser pulses that merge the different respective pulse energy profile and/or pulse width characteristics imparted by the configurations of the subresonators (12, 14). The subresonators (12, 14) may share a laser medium (42) in the common section, or each distinct subresonator section (28, 36) may have its own laser medium (42). Exemplary long and short subresonators (12, 14) generate specially tailored laser pulses having a short rise time and a long pulse width at one wavelength or two different wavelengths that may be beneficial for a variety of laser and micromachining applications including memory link processing.

Abstract: A plurality of subresonators (12, 14), having different design configurations, share a common resonator section (18) such that the lasing action can be substantially synchronized to provide coherent laser pulses that merge the different respective pulse energy profile and/or pulse width characteristics imparted by the configurations of the subresonators (12, 14). The subresonators (12, 14) may share a laser medium (42) in the common section, or each distinct subresonator section (28, 36) may have its own laser medium (42). Exemplary long and short subresonators (12, 14) generate specially tailored laser pulses having a short rise time and a long pulse width at one wavelength or two different wavelengths that may be beneficial for a variety of laser and micromachining applications including memory link processing.

Abstract: A specially shaped laser pulse energy profile characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size.

Abstract: A wavelength converter (34) such as a nonlinear crystal has an angle cut exit surface (36) to separate a harmonic wavelength from a fundamental or different harmonic wavelength. A solid optical overlay medium (28) has an entrance surface (38) that is angle cut to mate with the converter exit surface (36). The optical overlay medium (28) is substantially transparent to the fundamental and selected harmonic wavelengths, has a refractive index similar to that of the wavelength converter (34), and has damage thresholds at the selected wavelengths that are greater than the respective damage thresholds of the wavelength converter (34).

Abstract: A workpiece processing system employs a common modular imaged optics assembly and an optional variable beam expander for optically processing multiple laser beams. In one embodiment, a laser and a fixed beam expander cooperate to produce a laser beam that propagates through a beam switching device to produce multiple laser beams that propagate along separate propagation path portions and subsequently merge into a common path portion through an imaged optics assembly and optional variable expander. The beam expander sets the shape of the laser beams in the form of a Gaussian spatial distribution of light energy. The imaged optics assembly shapes the Gaussian spatial distribution of the laser beams to form output beams of uniform spatial distribution. In an alternative embodiment, the beam switching device is removed and the laser beams propagate from separate laser sources associated with separate optional beam expanders.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: A solid-state laser (10) has a laser resonator (20) with output ports (22) at both ends to provide two separate laser micromachining beams (42). A set of wavelength converters (26) can be employed to convert the laser machining beams (42) to harmonic wavelength outputs, thus reducing the risk of damage to the wavelength converters and enabling higher total average harmonic power to be generated from a single laser. The laser machining beams (42) can be different to perform different laser operations independently or can be adapted to have substantially identical parameters to permit simultaneous parallel high-quality laser operations on substantially identical workpieces (54), or the laser machining beams (42) can be combined to provide a single laser system output (42e). The two laser machining beams (42) can be further split or multiplexed to suit particular applications.

Abstract: A laser beam switching system employs a laser coupled to a beam switching device that causes a laser beam to switch between first and second beam positioning heads such that while the first beam positioning head is directing the laser beam to process a workpiece target location, the second beam positioning head is moving to another target location and vice versa. A preferred beam switching device includes first and second AOMs positioned such that the laser beam passes through the AOMs without being deflected. When RF is applied to the first AOM, the laser beam is diffracted toward the first beam positioning head, and when RF is applied to the second AOM, the laser beam is diffracted toward the second beam positioning head.

Abstract: A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic substrate such that a portion of the thickness of the ceramic substrate is removed. The UV laser beam forms a scribe line in the ceramic substrate in the absence of appreciable ceramic substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the ceramic substrate. Consequently, multiple depthwise fractures propagate into the thickness of the ceramic substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean breakage of the ceramic substrate into separate circuit components. The formation of this region facilitates higher precision breakage of the ceramic substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.

Abstract: A laser (126) and an AOM (10) are pulsed at substantially regular and substantially similar constant high repetition rates to provide working laser outputs (40) with variable nonimpingement intervals (50) without sacrificing laser pulse-to-pulse energy stability. When a working laser output (40) is demanded, an RF pulse (38) is applied to the AOM (10) in coincidence with the laser output (24) to transmit it to a target. When no working laser output (40) is demanded, an RF pulse (38) is applied to the AOM (10) in noncoincidence with the laser output (24) so it gets blocked. So the average thermal loading on the AOM (10) remains substantially constant regardless of how randomly the working laser outputs (40) are demanded. The AOM (10) can also be used to control the energy of the working laser output (40) by controlling the power of the RF pulse (38) applied. When the RF power is changed, the RF duration (44) of the RF pulse (38) is modified to maintain the constant average RF power.

Abstract: A laser beam (102) cuts through a component carrier mask (96) made of thin elastomeric material such as silicone rubber to form slots (98) having slot openings of a desired shape. In a preferred embodiment, a light absorptivity enhancement material such as iron oxide introduced into the silicone rubber causes formation of a flexible support blank that operationally adequately absorbs light within a light absorption wavelength range. A beam positioner (106) receiving commands from a programmed controller causes a UV laser beam of a wavelength that is within the light absorption wavelength range to cut into the mask multiple slots with repeatable, precise dimensions. Each of the slots cut has opposed side margins that define between them a slot opening of suitable shape to receive a miniature component (10) and to exert on it optimal holding and release forces.

Abstract: A set (50) of one or more laser pulses (52) is employed to remove passivation layer (44) over a conductive link (22). The link (22) can subsequently be removed by a different process such as chemical etching. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.05 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly material removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each target area (51). Conventional wavelengths in the IR range or their harmonics in the green or UV range can be employed.

Abstract: A method and laser system effect rapid removal of material from a workpiece by applying heating energy in the form of a light beam to a target location on the workpiece to elevate its temperature while maintaining its dimensional stability. When the target portion of the workpiece is heated, a laser beam is directed for incidence on the heated target location. The laser beam preferably has a processing laser output that is appropriate to effect removal of the target material from the workpiece. The combined incidence of the processing laser output and the heating energy on the target location enables the processing laser output to remove a portion of the target material at a material removal rate that is higher than the material removal rate achievable when the target material is not heated.

Abstract: A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.

Abstract: A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic or ceramic-like substrate such that a portion of the thickness of the substrate is removed. The UV laser beam forms a scribe line in the substrate without appreciable substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the substrate. Consequently, multiple depthwise cracks propagate into the thickness of the substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean fracture of the substrate into separate circuit components. The formation of this region facilitates higher precision fracture of the substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.

Abstract: In a master oscillator power amplifier, a driver (208) of a diode laser (202) is specially controlled to generate a set of two or more injection laser pulses that are injected into a power amplifier (204) operated in an unsaturated state to generate a set (50) of laser pulses (52) that replicate the temporal power profile of the injection laser pulses to remove a conductive link (22) and/or its overlying passivation layer (44) in a memory or other IC chip. Each set (50) includes at least one specially tailored pulse (52) and/or two or more pulses (50) having different temporal power profiles. The duration of the set (50) is short enough to be treated as a single “pulse” by conventional positioning systems (380) to perform on-the-fly link removal without stopping.

Abstract: A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic substrate such that a portion of the thickness of the ceramic substrate is removed. The UV laser beam forms a scribe line in the ceramic substrate in the absence of appreciable ceramic substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the ceramic substrate. Consequently, multiple depthwise fractures propagate into the thickness of the ceramic substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean breakage of the ceramic substrate into separate circuit components. The formation of this region facilitates higher precision breakage of the ceramic substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.

Abstract: A laser (126) and an AOM (10) are pulsed at substantially regular and substantially similar constant high repetition rates to provide working laser outputs (40) with variable nonimpingement intervals (50) without sacrificing laser pulse-to-pulse energy stability. When a working laser output (40) is demanded, an RF pulse (38) is applied to the AOM (10) in coincidence with the laser output (24) to transmit it to a target. When no working laser output (40) is demanded, an RF pulse (38) is applied to the AOM (10) in noncoincidence with the laser output (24) so it gets blocked. So the average thermal loading on the AOM (10) remains substantially constant regardless of how randomly the working laser outputs (40) are demanded. The AOM (10) can also be used to control the energy of the working laser output (40) by controlling the power of the RF pulse (38) applied. When the RF power is changed, the RF duration (44) of the RF pulse (38) is modified to maintain the constant average RF power.

Abstract: A quasi-CW diode- or lamp-pumped, A-O Q-switched solid-state UV laser system (10) synchronizes timing of the quasi-CW pumping with movement of the positioning system (36) to reduce pumping while the positioning system (36) is moving from one target area (31) to the next target area (31) to form multiple vias in a substrate at a high throughput. Thus, the available UV power for via formation is higher even though the average pumping power to the laser medium (16), and thermal loading of the laser pumping diodes (14), remains the same as that currently available through conventional CW pumping with conventionally available laser pumping diodes (14). The quasi-CW pumping current profile can be further modified to realize a preferred UV pulse amplitude profile.

Abstract: A method for cutting a ceramic wafer to form individual sliders for use in supporting the read/write heads in magnetic recording disk drives uses multiple parallel scans of a pulsed laser to ablate the ceramic material. After the wafer has been cut into individual rows, a pulsed laser beam is directed to that surface of the row that will become the disk sides of the sliders (i.e., the sides of the sliders that will face the disks in the disk drive). The laser is pulsed as the laser spot is moved along a first scan line across the surface of the wafer row to form a generally V-shaped trench. The laser spot is then moved in a direction generally perpendicular to the first scan line a distance less than the laser beam diameter, and then pulsed while the laser spot is scanned along a second line generally parallel to the first scan line.