Abstract: A vehicle control apparatus determines that a control start condition is satisfied when there is an object in an area of a moving route of the own vehicle and determine that a control forbidding condition is satisfied when there is an oncoming vehicle which satisfies a predetermined moving condition that the oncoming vehicle moves in an oncoming lane next to a moving lane of the own vehicle and approaches the own vehicle. The vehicle control apparatus determines that the control forbidding condition is not satisfied when a forbidding cancelling condition is satisfied, the forbidding cancelling condition being satisfied when a first me elapses since determining that the oncoming vehicle satisfying the predetermined moving condition disappears after determining that the control forbidding condition is satisfied and executes the steering control when the control start condition is satisfied, and the control forbidding condition is not satisfied.

Abstract: A collision avoidance assist apparatus calculates a lane marking recognition reliability level and execute an emergency steering control. The emergency steering control includes processes to determine a target steering torque to avoid a collision of a vehicle with an obstacle when determining that the vehicle has a high probability of colliding with the obstacle, a moving lane defined by the left and right lane markings is a straight lane, and the calculated lane marking recognition reliability level is equal to or higher than a first threshold reliability level, and apply a steering torque corresponding to the target steering torque to a steering mechanism. The collision avoidance assist apparatus stops executing the emergency steering control when the lane marking recognition reliability level becomes lower than a second threshold reliability level set to a value lower than the first threshold reliability level.

Abstract: A moving body detection system detects a moving body that is present in a blind spot of a driver of a host vehicle. A main control device of the moving body detection system executes a first terminal signal acquisition process for acquiring, as a first terminal signal, a signal that a reception device has received from a first terminal control device. When the first terminal signal is acquired by the process, the main control device determines whether a blind-spot condition that a moving body is present in the blind spot is met based on the acquired first terminal signal. The main control device executes the process on a first cycle when it is determined that the condition is not met, and executes the process on a second cycle that is shorter than the first cycle when it is determined that the condition is met.

Abstract: A method of fabricating a thin-film transistor is provided. In the method, an oxide semiconductor layer is formed above a substrate. A gate insulating layer is formed above the oxide semiconductor layer. A gate electrode is formed above the gate insulating layer. A metal oxide layer is formed on the oxide semiconductor layer by reactive sputtering to reduce a resistance of the oxide semiconductor layer in a region in contact with the metal oxide layer.

Abstract: An aqueous suspension agrochemical composition is provided containing fenpyrazamine and an acid component. The composition has no problem of emission of odor and has excellent storage stability. The composition has a pH at 25° C. in a range of 2.5 to 6.5.

Abstract: A method of fabricating a thin-film transistor is provided. In the method, an oxide semiconductor layer is formed above a substrate. A gate insulating layer is formed above the oxide semiconductor layer. A gate electrode is formed above the gate insulating layer. A metal oxide layer is formed on the oxide semiconductor layer by reactive sputtering to reduce a resistance of the oxide semiconductor layer in a region in contact with the metal oxide layer.

Abstract: A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer stacked on the oxide semiconductor layer and in contact with the source region and the drain region. The metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than that of a first metal included in the oxide semiconductor layer. A first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of the same in a bulk layer of the metal oxide layer.

Abstract: A method of fabricating a thin-film transistor includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a gate electrode above the gate insulating layer; forming a cover layer on the gate electrode; forming a side wall insulating layer on a side wall portion of the gate electrode by heat treatment, after the forming of a cover layer; forming an interlayer insulating layer covering the gate electrode and the oxide semiconductor layer, after the forming of a side wall insulating layer; and forming, above the interlayer insulating layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.

Abstract: An aqueous suspension agrochemical composition is provided containing fenpyrazamine and an acid component. The composition has no problem of emission of odor and has excellent storage stability. The composition has a pH at 25° C. in a range of 2.5 to 6.5.

Abstract: A method of fabricating a thin-film transistor includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a gate electrode above the gate insulating layer; forming a cover layer on the gate electrode; forming a side wall insulating layer on a side wall portion of the gate electrode by heat treatment, after the forming of a cover layer; forming an interlayer insulating layer covering the gate electrode and the oxide semiconductor layer, after the forming of a side wall insulating layer; and forming, above the interlayer insulating layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.

Abstract: A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer stacked on the oxide semiconductor layer and in contact with the source region and the drain region. The metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than that of a first metal included in the oxide semiconductor layer. A first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of the same in a bulk layer of the metal oxide layer.

Abstract: An aqueous suspension agrochemical composition is provided containing fenpyrazamine and an acid component. The composition has no problem of emission of odor and has excellent storage stability. The composition has a pH at 25° C. in a range of 2.5 to 6.5.

Abstract: Provided is a semiconductor element including a p-type semiconductor layer that is used in combination with an n-type ZnO-based semiconductor layer, and that can be formed, even at relatively low temperature, to have a small thickness, high crystallinity, and surface smoothness. The semiconductor element is expected to achieve high performance when used for a large-screen display. Specifically, the semiconductor element includes: a glass substrate; a lower electrode; a ZnO active layer (n-type semiconductor layer) having a thickness of 2 um to 4 um; a p-type ZnNiO layer (first p-type semiconductor layer) made of a p-type semiconductor material of Zn0.5Ni0.5O and having a thickness of 200 nm to 400 nm; a p-type NiO layer (second p-type semiconductor layer); and an upper electrode made of a transparent electrode material such as ITO, which are sequentially formed in the stated order.

Abstract: The present invention is a method of producing an ultraviolet light emitting phosphor material. This method includes a step of heat-treating a composition containing zinc and oxygen as main components and at least one selected from the group consisting of aluminum, gallium and indium as a sub-component, in the presence of at least two coexisting substances selected from the group consisting of zinc oxide, gallium oxide and phosphorus oxide under a non-oxidizing atmosphere.

Abstract: Protective layer (26) of front plate (20) of a plasma display panel has base protective layer (26a) and particle layer (26b). Base protective layer (26a) is formed of a thin film of metal oxide containing at least one of magnesium oxide, strontium oxide, calcium oxide, and barium oxide. Particle layer (26b) is formed by sticking, to base protective layer (26a), single crystal particles (27) of magnesium oxide having an NaCl crystal structure that is surrounded by a specified two-type orientation face formed of (100) face and (111) face or a specified three-type orientation face formed of (100) face, (110) face, and (111) face. The panel driving circuit drives the panel while temporally disposing the subfields so that the luminance weight monotonically decreases from a subfield in which an all-cell initializing operation is performed to the subfield immediately before the subfield in which its next all-cell initializing operation is performed.

Abstract: The present invention is a method of producing an ultraviolet light emitting phosphor material. This method includes a step of heat-treating a composition containing zinc and oxygen as main components and at least one selected from the group consisting of aluminum, gallium and indium as a sub-component, in the presence of at least two coexisting substances selected from the group consisting of zinc oxide, gallium oxide and phosphorus oxide under a non-oxidizing atmosphere.

Abstract: There is provided a PDP including a front substrate and a rear substrate. The front substrate and the rear substrate are disposed via discharge spaces. The discharge spaces are filled with a discharge gas. In the discharge spaces or in a space permeable to the discharge spaces, a copper-ion-exchanged zeolite adsorbent is disposed which is in an activated state.

Abstract: There is provided a PDP in which the structure of the periphery of a protective film is improved, excellent secondary electron emission property is exhibited, and improved efficiency and increased life can be expected. There is further provided a PDP in which occurrence of a discharge delay at the time of driving is prevented, and exhibition of high quality image display performance can be expected even in a high definition PDP that is driven at a high speed. Specifically, a crystalline film containing Sr in CeO2 in a concentration of 11.8 mol % to 49.4 mol % inclusive is formed on the surface of dielectric layer on the discharge space side as surface layer (protective film) having a thickness of about 1 ?m. High ? fine particles having secondary electron emission property higher than those of protective film are arranged thereon.

Abstract: Provided is a manufacturing method that allows even a PDP having high-definition cells to exhibit excellent image display performance with reduced power consumption by effectively preventing impurities from adhering to the protective layer. Specifically, in a pre-baking step, a back substrate 9 is baked at a pre-baking temperature. Here, a highest pre-baking temperature is set to be lower than a softening point of a sealing material. The back substrate 9 is superposed on a front substrate 2. Then, a sealing step is performed in a sealing atmosphere prepared by mixing a predetermined amount of a reducing gas with a non-oxidizing gas. The above enables the impurities attributed to organic components due to a sealing material paste to remain as low molecular components, whereby the impurities are evacuated and removed in an evacuating step performed after the sealing step. This prevents adherence of the impurities to the protective layer 8.

Abstract: The present invention improves discharge characteristics of a protective layer in order to provide a PDP that exhibits excellent display performance even if the PDP is of a fine-cell structure. The present invention also provides a manufacturing method for the PDP. In particular, a protective layer 8 is composed of an MgO film layer 81 and an MgO particle layer 82 that is made of MgO particles 16. The MgO particles 16 are formed by burning an MgO precursor and satisfy that a/b?1.2, where a denotes a spectrum integral value in a wavelength region of a CL spectrum from 650 nm to 900 nm, exclusive of 900 nm, and b denotes a spectrum integral value in a wavelength region of the CL spectrum from 300 nm to 550 nm, exclusive of 550 nm.