Abstract: Provided is a semiconductor device capable of improving quantum efficiency and time resolution. In the semiconductor device, each of a plurality of pixels includes an APD element formed in a semiconductor layer, and a first metal wiring provided on a first surface of the semiconductor layer.

Abstract: A photodetector comprising: a separation region that is provided in a semiconductor substrate and defines a pixel region; a hole accumulation region that is provided in the semiconductor substrate of the pixel region along a side surface of the separation region; a multiplication region that is provided in the semiconductor substrate of the pixel region and is configured by joining a first conductivity type region and a second conductivity type region from the surface side of the semiconductor substrate in the thickness direction of the semiconductor substrate; and an insulating region provided in the semiconductor substrate in a region between the multiplication region and the hole accumulation region, wherein a formation depth of the insulating region is larger than a formation depth of the first conductivity type region.

Abstract: To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

Abstract: A light-receiving device according to an embodiment of the present disclosure includes a pixel array including light-receiving elements provided in respective pixels. The light-receiving elements each include a high electric field region and a photoelectric conversion region. A plurality of the light-receiving elements provided in the respective pixels includes a plurality of types of elements that have temperature regions having high photon detection efficiency (PDE). The temperature regions are different from each other and partially overlap each other.

Abstract: Provided is a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. The solid-state imaging device includes a first pixel separation region that separates a plurality of unit pixels including two or more subpixels, a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

Abstract: A light detection device according to an embodiment of the present disclosure includes: a semiconductor substrate that includes a first surface and a second surface opposed to each other, and includes a pixel array in which a plurality of pixels is disposed in an array; a semiconductor layer that is provided on a side of the first surface of the semiconductor substrate; a light receiver that is provided inside the semiconductor substrate for each of the pixels, and generates carriers corresponding to a received light amount by photoelectric conversion; a multiplier that includes a first conduction-type region and a second conduction-type region sequentially stacked on the side of the first surface, at least the second conduction-type region being provided in the semiconductor layer, and that performs avalanche multiplication on the carriers generated by the light receiver; a first electrode that is provided on the side of the first surface, and is electrically coupled to the light receiver; and a second elect

Abstract: Provided is an optical detection device capable of suppressing a fluctuation of a drive starting voltage in a pixel. The optical detection device according to the present disclosure includes: a semiconductor substrate that has a first surface as a light incident surface and a second surface on an opposite side to the light incident surface; a first pixel that is in the semiconductor substrate and has an avalanche amplification region including a first conductive region and a second conductive region; a pixel isolation portion that isolates the first pixel from an adjacent pixel; a first insulation film that is provided on the second surface side and in contact with the pixel isolation portion; and a second insulation film that is provided between the first insulation film and the avalanche amplification region, in which a film thickness of the second insulation film is larger than the film thickness of the first insulation film.

Abstract: A photodetection device is provided which includes a pixel array unit including a plurality of pixels arranged in a matrix on a semiconductor substrate to detect light, in which each of the pixels includes a pixel separation wall that surrounds the pixels and separates the pixels from one another, a photoelectric conversion unit inside the semiconductor substrate to generate an electric charge by light, a multiplication region inside the semiconductor substrate to multiply the electric charge from the photoelectric conversion unit, and first and second reflective portions that reflect light traveling toward outside the semiconductor substrate into the semiconductor substrate, the first reflective portion is provided, on a first surface that receives light of the semiconductor substrate, to protrude from the pixel separation wall toward a pixel center, and the second reflective portion is provided on a second surface of the semiconductor substrate facing the first surface.

Abstract: In order to achieve the above objects, according to the present invention, an information processing system includes a wind-condition estimation unit that estimates wind-condition information in a predetermined space region, and an evaluation unit that evaluates flight difficulty or economic efficiency of an aircraft based on the estimated wind-condition information. According to the present invention, an information processing method includes estimating wind-condition information in a predetermined space region, and evaluating flight difficulty or economic efficiency of an aircraft based on the estimated wind-condition information.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: The present technology relates to a light receiving element, a distance measuring system, and an electronic device capable of reducing unintended edge breakdown in a case where a pixel is miniaturized. A light receiving element includes a pixel that includes a PN junction region in which a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type opposite to the first conductivity type are joined, and a third semiconductor region of the first conductivity type that is not connected to any wiring outside the first semiconductor region near a first surface of a substrate on which a wiring that supplies a predetermined power supply voltage to the first semiconductor region is formed. The present technology can be applied to, for example, a distance measuring sensor that receives reflected light and measures a distance, and the like.

Abstract: Provided is a light receiving element in a semiconductor substrate and surrounded by a pixel isolation wall, the light receiving element including a multiplication region that amplifies a charge, a cathode unit on a surface of the multiplication region on an opposite side from a light receiving surface, a hole accumulation region covering the light receiving surface and an inner side surface of the pixel isolation wall, and an anode unit on a part of a surface of the hole accumulation region covering the inner side surface of the pixel isolation wall that is on the opposite side from the light receiving surface, wherein when the semiconductor substrate is viewed from above a surface on the opposite side from the light receiving surface, a center point of the multiplication region is farther from the anode unit than a center point of the light receiving element.

Abstract: A light-receiving device according to an embodiment of the present disclosure includes a pixel array including light-receiving elements provided in respective pixels. The light-receiving elements each include a high electric field region and a photoelectric conversion region. A plurality of the light-receiving elements provided in the respective pixels includes a plurality of types of elements that have temperature regions having high photon detection efficiency (PDE). The temperature regions are different from each other and partially overlap each other.

Abstract: The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF.

Abstract: To reduce a variation in the characteristics of avalanche photodiode sensors. An avalanche photodiode sensor includes a first semiconductor region, a second semiconductor region, a low-impurity-concentration region, a first contact region, and a second contact region. The first semiconductor region is disposed on a surface of a semiconductor substrate. The second semiconductor region is disposed below the first semiconductor region and has a different conductivity type from the first semiconductor region. The low-impurity-concentration region is disposed adjacent to the second semiconductor region. The first contact region is disposed on the surface of the semiconductor substrate to be adjacent to the first semiconductor region and has electrodes connected thereto. The second contact region is disposed adjacent to the low-impurity-concentration region and has electrodes connected thereto.

Abstract: The present technology relates to a light detecting element and a method of manufacturing the same that make it possible to reduce pixel size. The light detecting element includes a plurality of pixels arranged in the form of a matrix. Each of the pixels includes a first semiconductor layer of a first conductivity type formed in an outer peripheral portion in the vicinity of a pixel boundary, and a second semiconductor layer of a second conductivity type opposite from the first conductivity type formed on the inside of the first semiconductor layer as viewed in plan. A high field region formed by the first semiconductor layer and the second semiconductor layer when a reverse bias voltage is applied is configured to be formed in a depth direction of a substrate. The present technology is, for example, applicable to a photon counter or the like.

Abstract: The present disclosure relates to a light reception element and an electronic device that make it possible to achieve better performance. Provided is a SPAD element including an avalanche multiplication region provided at a junction surface between an N-type diffusion layer and a P-type diffusion layer provided on a side of a sensor substrate opposite from a light reception surface of the sensor substrate, a hole accumulation layer provided so as to surround a lateral surface and a light reception surface of a well provided in the sensor substrate, a pinning layer provided outside the hole accumulation layer, and an in-pixel trench structure provided in a pixel region, the pinning layer being formed all over an outer peripheral surface of the in-pixel trench structure. The present technology is applicable to, for example, a distance image sensor that performs time-of-flight (ToF)-based distance measurement.

Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.

Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.