Abstract: A bonnet structure including a bonnet flange extending inward from an inner peripheral surface of a bonnet is positioned farther toward a first direction, which is opposite in a vehicle longitudinal direction to a rotary shaft for the bonnet, than shroud flanges extending outward from side surfaces of a shroud main body when the bonnet is located at a closed position. A first elastic sealing member mounted to the bonnet flange is brought from the first direction into contact with anteroposterior contact surfaces of the shroud flanges that face to the first direction when the bonnet is rotated about the rotary shaft from the opened position to the closed position. It is possible to effectively prevent an excessive abrasion and a detachment of elastic sealing members for sealing a gap between the bonnet and the shroud.

Abstract: A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

Abstract: A recording apparatus includes: a housing which constitutes an appearance of a recording apparatus body; and an electronic substrate which is vertically disposed along an inner side surface of the housing. Here, an air supply hole and an air exhaust hole are formed on a side surface portion of the housing corresponding to a lower portion and an upper portion of the electronic substrate so that an air-flow path for external air is formed in an installation region in which the electronic substrate is provided.

Abstract: A plasma processing apparatus having a substrate processing chamber, which enables leakage of plasma into an exhaust space to be prevented. The substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an exhaust space for exhausting gas out of the processing space, and an exhaust flow path that communicates the exhaust space and the processing space together. The plasma processing apparatus further has a grounding component that is electrically grounded and is disposed in the exhaust flow path. The grounding component has a conducting portion made of a conductive material, and the conducting portion has an exposed area exposed to the exhaust flow path in a range of 100 to 1000 cm2.

Abstract: A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber 11 has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber 11 has an upper electrode plate 38 that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate 38 using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.

Abstract: In a bonnet structure according to the present invention, a bonnet flange 52 extending inward from an inner peripheral surface of a bonnet 5 is positioned farther toward a first direction, which is opposite in a vehicle longitudinal direction to a rotary shaft 51 for the bonnet 5, than shroud flanges 82 extending outward from side surfaces of a shroud main body 81 when the bonnet 5 is located at a closed position. A first elastic sealing member 53 mounted to the bonnet flange 52 is brought from the first direction into contact with anteroposterior contact surfaces 82a of the shroud flanges 82 that face to the first direction X1 when the bonnet 5 is rotated about the rotary shaft 51 from the opened position to the closed position. It is possible to effectively prevent an excessive abrasion and a detachment of elastic sealing members for sealing a gap between the bonnet and the shroud.

Abstract: A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

Abstract: A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.

Abstract: A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

Abstract: A remedy for cancer obtained from a different viewpoint from the viewpoints employed in developing the existing anticancer drugs, i.e., focusing on the intercellular adhesion of cancer cells. Namely, provided is a remedy for cancer with fewer side effects which inhibits the proliferation of cancer cells and the intercellular adhesion of cancer cells. Also provided is an antibody, which recognizes the disintegrin domain of ADAM-15 and is usable as an anticancer agent, and so on. An antibody, which recognizes the disintegrin domain of ADAM-15 but does not recognize the RGD sequence or loop region in the disintegrin domain of ADAM-15, and so on; an antibody, which inhibits ADAM-15 and integrin ?v?3-dependent cell adhesion, and so on; and an antibody, which inhibits ADAM-15 and integrin ?v?1-dependent cell adhesion, and so on.

Abstract: A recording apparatus includes: a housing which constitutes an appearance of a recording apparatus body; and an electronic substrate which is vertically disposed along an inner side surface of the housing. Here, an air supply hole and an air exhaust hole are formed on a side surface portion of the housing corresponding to a lower portion and an upper portion of the electronic substrate so that an air-flow path for external air is formed in an installation region in which the electronic substrate is provided.

Abstract: The present invention is an electrode plate for use in plasma processing, to be placed in a plasma processing system so that it faces to a substrate to be subjected to plasma processing, characterized in that its resistivity is in the range of 0.01 m?cm to 2 ?cm.

Abstract: A plasma processing apparatus which enables an insulating film on a grounding electrode to be removed. A plasma processing apparatus has a substrate processing chamber having therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that applies radio frequency electrical power into the processing space, a DC electrode that applies a DC voltage into the processing space, and a grounding electrode that is exposed to the processing space. The grounding electrode and the RF electrode are adjacent to one another with an insulating portion therebetween, and a distance between the grounding electrode and the RF electrode is set in a range of 0 to 10 mm.

Abstract: A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

Abstract: A plasma processing apparatus having a substrate processing chamber, which enables leakage of plasma into an exhaust space to be prevented. The substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an exhaust space for exhausting gas out of the processing space, and an exhaust flow path that communicates the exhaust space and the processing space together. The plasma processing apparatus further has a grounding component that is electrically grounded and is disposed in the exhaust flow path. The grounding component has a conducting portion made of a conductive material, and the conducting portion has an exposed area exposed to the exhaust flow path in a range of 100 to 1000 cm2.

Abstract: A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber 11 has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber 11 has an upper electrode plate 38 that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate 38 using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.

Abstract: A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.

Abstract: A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

Abstract: An IC card that allows a service provider doing a business of loading an application into the IC card to dynamically load the application into the IC card safely after the issuance of the IC card without making a contract directly with a card issuer issuing the IC card and without establishing a communication with the card issuer. The card issuer issuing the IC card hands over an encryption key in advance to a third party other than the card issuer in order to entrust the third party with work to authenticate an application to be loaded or to allow the third party to function as an agent on behalf of the card issuer. The card issuer issues an agent certification to the third party to be used as evidence showing that the third party is an agent representing the card issuer.