Abstract: A beam expander includes a first lens unit including one of an SLM or a VFL, a second lens unit being optically coupled to the first lens unit and including one of an SLM or a VFL, and a control unit controlling focal lengths of the first and second lens units. A distance between the first and second lens units is invariable. The control unit controls the focal lengths of the first and second lens units such that a light diameter D1 of light input to the first lens unit and a light diameter D2 of light output from the second lens unit are different from each other.

Abstract: In the control of light condensing irradiation of laser light using a spatial light modulator, the number of wavelengths of the laser light, a value of each wavelength, and incident conditions of the laser light are acquired (step S101), the number of light condensing points, and a light condensing position, a wavelength, and a light condensing intensity on each light condensing point are set (S104), and a light condensing control pattern to be provided for the laser light is set for each light condensing point (S107). Then, a modulation pattern to be presented in the spatial light modulator is designed in consideration of the light condensing control pattern (S108). Further, in the design of a modulation pattern, a design method focusing on an effect by a phase value of one pixel is used, and when evaluating a light condensing state on the light condensing point, a propagation function to which a phase pattern opposite to the light condensing control pattern is added is used.

Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

Abstract: A micro object control apparatus for controlling motion of a micro object within a medium includes a light source, an optical vortex generation unit, an objective lens, an imaging unit, an analysis unit, and a movement unit. The analysis unit acquires first motion information of the micro object based on the image data in which the micro object optically trapped with the optical vortex is imaged by setting the focal position of the optical vortex to a first position, acquires second motion information of the micro object based on the image data in which the micro object optically trapped with the optical vortex is imaged by setting the focal position of the optical vortex to a second position, and evaluates a state of an optical trap of the micro object with the optical vortex by comparing the first motion information and the second motion information.

Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

Abstract: A light irradiation device includes a Gaussian beam output unit for outputting light having a light intensity distribution that conforms to a Gaussian distribution, a spatial light modulator for receiving the light and modulating the light by presenting a CGH, an optical system for converging the modulated light, and an amplitude mask arranged on at least one of an optical axis between the Gaussian beam output unit and the spatial light modulator and an optical axis between the spatial light modulator and the optical system. The amplitude mask has a circular-shaped first region centered on the optical axis and an annular-shaped second region that surrounds the first region. Transmittance in the second region continuously decreases as a distance from the optical axis increases.

Abstract: An optical observation system includes a spatial light modulator displaying a Fresnel type kinoform on a phase modulation plane, and modulating light L1 in phase to irradiate an observation object with modulated light L2, an imaging optical system imaging observation target light L3 from the observation object, an optical system moving mechanism moving the imaging optical system in an optical axis direction of the observation target light L3, and a control section controlling the optical system moving mechanism such that the focal position of the imaging optical system changes in response to a change in the light condensing position of the modulated light L2 by the Fresnel type kinoform.

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

Abstract: A light irradiation device is an apparatus for irradiating an irradiation object, and includes a light source outputting readout light L1, a spatial light modulator modulating the readout light L1 in phase to output modulated light L2, and a both-sided telecentric optical system including a first lens optically coupled to a phase modulation plane of the spatial light modulator and a second lens optically coupled between the first lens and the irradiation object, and optically coupling the phase modulation plane and the irradiation object. An optical distance between the phase modulation plane and the first lens is substantially equal to a focal length of the first lens. The spatial light modulator displays a Fresnel type kinoform on the phase modulation plane.

Abstract: A light modulation apparatus 1A includes a first spatial light modulator, a pinhole member, and a second spatial light modulator. The first spatial light modulator has a phase modulation plane on which a kinoform for performing intensity modulation is displayed, and generates modulated light P2. The pinhole member has a light passing hole for letting a first-order light component of the modulated light P2 pass therethrough, and blocks a zeroth-order light component of the modulated light P2. The second spatial light modulator has a polarization modulation plane that controls the polarization state of the modulated light P2 incident on the polarization modulation plane through the light passing hole of the pinhole member, and generates modulated light P3.

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a common electrode 25, a plurality of pixel electrodes 21, and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.

Abstract: A light irradiation apparatus includes a light source, a dispersive element, a spatial light modulator, and a focusing element. The dispersive element disperses pulsed light output from the light source and outputs the light. The dispersive element includes, for example. The spatial light modulator modulates a phase spectrum or an intensity spectrum of the light output from the dispersive element and outputs the light. The focusing element receives the light output from the spatial light modulator in a dispersing state, and focuses the light on a common region (focusing region) in a surface or an inside of an object.

Abstract: A light modulation apparatus includes a reflection type spatial light modulator, a polarization separating unit, a first polarization plane rotation unit, a polarization combining unit, and a second polarization plane rotation unit. The polarization separating unit separates input light, and outputs first separated light and second separated light. The first polarization plane rotation unit causes the first separated light to have P-polarization. A first region of a modulation plane of the spatial light modulator modulates the first separated light and outputs first modulated light, and a second region modulates the second separated light and outputs second modulated light. The second polarization plane rotation unit causes the second modulated light to have S-polarization. The polarization combining unit combines the first modulated light and the second modulated light and outputs output light.

Abstract: A laser element includes a photonic crystal layer on which laser light is incident. The photonic crystal layer includes a base layer formed of a first refractive index medium; and a plurality of different refractive index regions formed of a second refractive index medium having a refractive index different from that of the first refractive index medium and disposed in the base layer. The plurality of different refractive index regions includes a first different refractive index region of which a planar shape is an approximate circle, an approximate square, or an approximate polygon having a rotational symmetry of 90° and a first area perpendicular to a thickness direction; and a second different refractive index region having a second area perpendicular to a thickness direction.

Abstract: A light irradiation device is an apparatus for irradiating an irradiation object, and includes a light source outputting readout light L1, a spatial light modulator modulating the readout light L1 in phase to output modulated light L2, and a both-sided telecentric optical system including a first lens optically coupled to a phase modulation plane of the spatial light modulator and a second lens optically coupled between the first lens and the irradiation object, and optically coupling the phase modulation plane and the irradiation object. An optical distance between the phase modulation plane and the first lens is substantially equal to a focal length of the first lens. The spatial light modulator displays a Fresnel type kinoform on the phase modulation plane.

Abstract: A phase distribution is calculated such that modulated light has a predetermined intensity distribution on a target plane and displayed on a phase modulation plane, readout light enters the phase modulation plane so as to generate the modulated light. When calculating the phase distribution, a region on the phase modulation plane is divided into N regions A1 . . . AN, with sizes set such that integration values of an intensity distribution in the regions are equal to each other. Further, a region on the target plane is divided into N regions B1 . . . BN, with sizes set such that integration values of an intensity distribution in the regions are equal to each other. The phase distribution is calculated by obtaining an optical path length from the region An to the region Bn, and determining the phase of the region An based on the optical path length.

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a transparent common electrode 25, a plurality of transparent pixel electrodes 21, a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated by the spatial light modulator SLM, passes therethrough, and is output to the outside.