Abstract: A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. Each three-dimensional nano-structure has a first peak and a second peak aligned side by side. A first groove is defined between the first peak and the second peak. A second groove is defined between the two adjacent three-dimensional nano-structures. A depth of the first groove is lower than that of the second groove.

Abstract: A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode electrically is connected to the second semiconductor layer. The substrate has a number of three-dimensional nano-structures, and each of the number of three-dimensional nano-structures has a stepped structure.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a protective layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. the protective layer is located on the semiconductor layer. The cermet layer is located on the protective layer. A first electrode covers entire surface of the first semiconductor layer away from the active layer. A second electrode is electrically connected to the second semiconductor layer.

Abstract: A method for making a hollow-structure metal grating is provided. The method includes the following steps. First, a substrate is provided. Second, a metal layer is located on a surface of the substrate. Third, a patterned mask layer is formed on a surface of the metal layer. The patterned mask layer is made of a chemical amplified photoresist. Fourth, the surface of the metal layer exposed out of the patterned mask layer is plasma etched. Lastly, the patterned mask layer on the surface of the metal layer is dissolved.

Abstract: A method of making organic light emitting diode array includes following steps. A base having a number of first electrodes on a surface of the base is provided. A first organic layer is located on the surface of the base to cover the first electrodes. A template with a first patterned surface is provided, wherein the first patterned surface includes a number of grooves with different depths. The first patterned surface of the template is attached on the first organic layer and separated from each other, wherein a number of protruding structures with different heights is formed. An organic light emitting layer is deposited to cover the protruding structures. A second organic layer is located on the organic light emitting layer. A second electrode is applied to electrically connected to the second organic layer.

Abstract: The disclosure relates to a method of making organic light emitting diode array. A base defining a plurality of convexities is provided. A number of first electrodes are applied on the plurality of convexities. A patterned second insulative layer is made among the convexities to cover first parts of the first electrodes between the convexities and expose second parts of the first electrodes on top surfaces of the convexities to form a number of protrudent portions. A number of electroluminescent layers are transfer printed on the number of protrudent portions to form a number of organic light emitting layers. A second electrode is electrically connected to the number of organic light emitting layers.

Abstract: A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer stacked together. The active layer is on a surface of the first semiconductor layer. The second semiconductor layer is on a surface of the active layer away from the first semiconductor layer. The cermet layer is on a surface of the second semiconductor layer away from the first semiconductor layer.

Abstract: A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode electrically is connected to the second semiconductor layer. The substrate has a number of three-dimensional nano-structures, and each of the number of three-dimensional nano-structures has a stepped structure.

Abstract: A solar cell includes a back electrode, a silicon substrate, a doped silicon layer and an upper electrode arranged in that order. The silicon substrate comprises a number of three-dimensional nano-structures aligned side by side adjacent to the upper electrode. The doped silicon layer is located on a surface of the three-dimensional nano-structures. A cross section of each three-dimensional nano-structure is M-shaped.

Abstract: The disclosure relates to an organic light emitting diode array. The organic light emitting diode array includes a number of thin-film transistors arranged to form an array, a first insulative layer, a plurality of first electrodes, a number of electroluminescent layers, a patterned second insulative layer, and at least one second electrode. The first insulative layer is located on the plurality of first electrodes defines a number of convexities. The first electrodes are located on the convexities and electrically connected to the thin-film transistors. The electroluminescent layers are located on the first electrodes. The patterned second insulative layer is located on the first insulative layer to cover the first electrodes and expose the electroluminescent layers. The at least one second electrode is electrically connected to the electroluminescent layers.

Abstract: The disclosure relates to a method of making organic light emitting diode array. A base defining a number of convexities is provided. A number of first electrodes are applied on the number of convexities. A number of electroluminescent layers are transfer printed on the number of first electrodes to form the number of organic light emitting layers. A patterned second insulative layer is made to cover the number of first electrodes and expose the number of organic light emitting layers. A second electrode is electrically connected to the number of organic light emitting layers.

Abstract: A method of making organic light emitting diode array includes following steps. A base having a number of first electrodes on a surface of the base is provided. A first organic layer is located on the surface of the base to cover the number of first electrodes. A first organic light emitting layer is applied on the first organic layer. A template with a first patterned surface with a number of grooves with different depths is provided. The template is attached on the first organic light emitting layer and separated from each other, wherein a number of protruding structures with different heights is formed. A second organic light emitting layer is deposited on a part of the plurality of protruding structures. A second organic layer is located on the organic light emitting layer. A second electrode is applied to electrically connect to the second organic layer.

Abstract: The disclosure relates to an organic light emitting diode array. The organic light emitting diode array includes a base defining a number of convexities spaced from each other, a number of first electrodes located on the convexities, a number of electroluminescent layers located on the first electrodes, a patterned second insulative layer located among the convexities to cover part of the base and expose the electroluminescent layers, and a number of second electrodes electrically connected to the electroluminescent layers. The first electrodes are parallel with each other and extend along a first direction. The second electrodes are parallel with each other and extend along a second direction different from the first direction.

Abstract: The invention discloses a tilting disc check valve, which includes a left valve body (1), a right valve body (2), a large valve plate (3), a small valve plate (4) and a diaphragm control group (5), wherein the left valve body (1) and the right valve body (2) are butted into a whole through oblique openings; the oblique openings are inclined in a manner that upper parts are inclined towards the right valve body (2); the diaphragm control group (5) is arranged on the left valve body (1); the large valve plate (3) is arranged along the oblique openings; the large valve plate (3) is positioned in a valve cavity formed by the left valve body (1) and the right valve body (2); the large valve plate (3) is suspended on shaft holes of the left valve body (3) through valve shafts (6); the small valve plate (4) is connected with the diaphragm control group (5); and the small valve plate (4) is mounted at a slow closing valve port of the large valve plate (3) through a small valve plate pin shaft (7).

Abstract: A method for making a grating includes the following steps. A first photoresist film is formed on a substrate. A second photoresist film is applied on the first photoresist film. A number of first cavities are formed in the second photoresist film, wherein part of the first photoresist film is exposed to form a first exposed part. A number of second cavities are formed, wherein part of the surface of the substrate is exposed to form an exposed surface. A mask layer is deposited on the second photoresist film and the exposed surface of the substrate. A patterned mask layer is formed, and part of the substrate is exposed to form a second exposed part. The second exposed part of the substrate is etched through the patterned mask layer. The patterned mask layer is removed.

Abstract: A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent bar-shaped protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent bar-shaped protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.

Abstract: A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode electrically is connected to the second semiconductor layer. The first semiconductor layer has a number of three-dimensional nano-structures, and each of the number of three-dimensional nano-structures has a stepped structure.

Abstract: A method for making a hollow-structure metal grating is provided. The method includes providing a substrate, forming a patterned mask layer on a surface of the substrate, applying a metal layer with a thickness greater than 10 nanometers on the patterned mask layer, and removing the patterned mask layer by a washing method using organic solvent. The patterned mask layer includes a plurality of first protruding structures and a plurality of first cavities arranged in intervals.

Abstract: The disclosure relates to a method of making organic light emitting diode array. A base defining a plurality of convexities is provided. A number of first electrodes are applied on the plurality of convexities. A number of red light electroluminescent layers are transfer printed on a first group of the first electrodes. A number of green light electroluminescent layers are transfer printed on a second group of the first electrodes. A number of blue light electroluminescent layers are transfer printed on a third group of the first electrodes. A patterned second insulative layer is made to cover the number of first electrodes and expose the electroluminescent layers. A second electrode is electrically connected to the electroluminescent layers.