Patents by Inventor Zhizhang Chen
Zhizhang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11390076Abstract: Fluid feed paths having enhanced wettability characteristics are disclosed. An example printhead includes a nozzle to expel fluid therefrom, and a fluid feed path to fluidly couple a fluid source and the nozzle. Fluid feed path walls are composed of a first material having a first wettability characteristic and a second material having a second wettability characteristic. The second wettability characteristic differing from the first wettability characteristic. A coating is formed on at least a portion of the fluid feed path defined by the first material and the second material of the substrate. The coating to harmonize the first wettability characteristic and the second wettability characteristic.Type: GrantFiled: February 6, 2019Date of Patent: July 19, 2022Assignee: Hewlett-Packard Development Company, L.P.Inventors: Chien-Hua Chen, Michael G. Groh, Zhizhang Chen
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Patent number: 11230098Abstract: A passivation stack can include a laminated film, including from 8 to 40 alternating layers of HfO2 and SiO2. The layers can individually have a thickness from 8 Angstroms to 40 Angstroms, and the laminated film can have a total thickness of 280 Angstroms to 600 Angstroms. The passivation stack can also include a barrier film of HfO2 having a thickness from 50 Angstroms to 300 Angstroms applied to the laminated film.Type: GrantFiled: May 11, 2018Date of Patent: January 25, 2022Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Lawrence H. White
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Patent number: 11161152Abstract: The present disclosure relates to a Radix Codcnopsitis Pilosulas sorting and threading machine that rapidly sorts and automatically threads a Radix Codcnopsitis Pilosulas into a string. The Radix Codcnopsitis Pilosulas sorting and threading machine includes a bottom plate, a support leg, a mounting frame, an N-shaped frame, a feeding hopper, a baffle, a first roller, a first conveyor belt, a drive motor, a deep groove ball bearing and a spindle, where the mounting frame is fixedly mounted on the bottom plate through the support leg, the N-shaped frame is mounted on an upper left side of the mounting frame, the feeding hopper is mounted in the top of the mounting frame, two first rollers are rotatably mounted on an upper part of the mounting frame, and a first roller on the right is higher than a first roller on the left.Type: GrantFiled: March 25, 2020Date of Patent: November 2, 2021Assignee: Jiangxi University of Science and TechnologyInventors: Hua Zhu, Zhizhang Chen, Haiqiang Hu
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Publication number: 20210331471Abstract: A passivation stack can include a laminated film, including from 8 to 40 alternating layers of HfO2 and SiO2. The layers can individually have a thickness from 8 Angstroms to 40 Angstroms, and the laminated film can have a total thickness of 280 Angstroms to 600 Angstroms. The passivation stack can also include a barrier film of HfO2 having a thickness from 50 Angstroms to 300 Angstroms applied to the laminated film.Type: ApplicationFiled: May 11, 2018Publication date: October 28, 2021Inventors: Zhizhang Chen, Lawrence H. White
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Publication number: 20210229439Abstract: Fluid feed paths having enhanced wettability characteristics are disclosed. An example printhead includes a nozzle to expel fluid therefrom, and a fluid feed path to fluidly couple a fluid source and the nozzle. Fluid feed path walls are composed of a first material having a first wettability characteristic and a second material having a second wettability characteristic. The second wettability characteristic differing from the first wettability characteristic. A coating is formed on at least a portion of the fluid feed path defined by the first material and the second material of the substrate. The coating to harmonize the first wettability characteristic and the second wettability characteristic.Type: ApplicationFiled: February 6, 2019Publication date: July 29, 2021Inventors: Chien-Hua Chen, Michael G. Groh, Zhizhang Chen
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Patent number: 10894406Abstract: A thin film stack can include a metal substrate having a thickness of from 200 angstroms to 5000 angstroms and a passivation barrier disposed on the metal substrate at a thickness of from 600 angstroms to 1650 angstroms. The passivation barrier can include a dielectric layer and an atomic layer deposition (ALD) layer disposed on the dielectric layer. The dielectric layer can have a thickness of from 550 to 950 angstroms. The ALD layer can have a thickness from 50 to 700 angstroms.Type: GrantFiled: September 26, 2016Date of Patent: January 19, 2021Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Mohammed S Shaarawi, Jeremy Sells
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Patent number: 10890486Abstract: In an example, a lab-on-chip Raman spectroscopy system is described. The lab-on-chip system includes a housing having a fluid channel formed thereon. The fluid channel is coupled to an inlet and to an outlet. A surface-enhanced Raman spectroscopy substrate is positioned inside the fluid channel. The surface-enhanced Raman spectroscopy substrate includes a plasmonic nanostructure and a sacrificial, conformal passivation coating deposited over at least the plasmonic nanostructure.Type: GrantFiled: April 19, 2016Date of Patent: January 12, 2021Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Chien-Hua Chen, James Elmer Abbott, Jr.
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Patent number: 10871449Abstract: A method for forming a surface enhanced Raman spectroscopy (SERS) sensing apparatus may include providing a body having an internal microfluidic passage, the microfluidic passage having an interior surrounded by an interior surface, depositing a conformal inorganic passivation film onto the interior surface so as to continuously surround the interior by atomic layer deposition and positioning a SERS sensor in connection with the microfluidic passage after the depositing of the conformal inorganic film.Type: GrantFiled: April 22, 2016Date of Patent: December 22, 2020Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Chien-Hua Chen, James E Abbott
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Publication number: 20200331030Abstract: The present disclosure relates to a Radix Codcnopsitis Pilosulas sorting and threading machine that rapidly sorts and automatically threads a Radix Codcnopsitis Pilosulas into a string. The Radix Codcnopsitis Pilosulas sorting and threading machine includes a bottom plate, a support leg, a mounting frame, an N-shaped frame, a feeding hopper, a baffle, a first roller, a first conveyor belt, a drive motor, a deep groove ball bearing and a spindle, where the mounting frame is fixedly mounted on the bottom plate through the support leg, the N-shaped frame is mounted on an upper left side of the mounting frame, the feeding hopper is mounted in the top of the mounting frame, two first rollers are rotatably mounted on an upper part of the mounting frame, and a first roller on the right is higher than a first roller on the left.Type: ApplicationFiled: March 25, 2020Publication date: October 22, 2020Inventors: Hua Zhu, Zhizhang Chen, Haiqiang Hu
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Publication number: 20200158645Abstract: A method for forming a surface enhanced Raman spectroscopy (SERS) sensing apparatus may include providing a body having an internal microfluidic passage, the microfluidic passage having an interior surrounded by an interior surface, depositing a conformal inorganic passivation film onto the interior surface so as to continuously surround the interior by atomic layer deposition and positioning a SERS sensor in connection with the microfluidic passage after the depositing of the conformal inorganic film.Type: ApplicationFiled: April 22, 2016Publication date: May 21, 2020Inventors: Zhizhang Chen, Chien-Hua Chen, James E Abbott
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Patent number: 10654270Abstract: According to an example, a printhead including a thin film passivation layer, an adhesion layer, and a fluidics layer; wherein the thin film passivation layer is an atomic layer deposition thin film layer is disclosed.Type: GrantFiled: July 12, 2016Date of Patent: May 19, 2020Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Mohammed S Shaarawi
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Patent number: 10532571Abstract: In one example, a printhead structure includes an ejector element, a multi-layer insulator covering the ejector element, and an amorphous metal on the insulator.Type: GrantFiled: March 12, 2015Date of Patent: January 14, 2020Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Zhizhang Chen, James Elmer Abbott, Jr., Michael W Cumbie, Roberto A Pugliese
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Patent number: 10479094Abstract: Energy efficient printheads are disclosed. An example printhead includes a substrate with channels to direct ink toward a plurality of nozzles of the printhead. The example printhead further includes a passivation layer on the substrate. The passivation layer includes a first thin film of a first dielectric material formed using atomic layer deposition.Type: GrantFiled: January 20, 2016Date of Patent: November 19, 2019Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Zhizhang Chen, Mohammed Shaarawi, Brian Bolf, Paul Krause
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Patent number: 10449762Abstract: According to an example, a fluid ejection device may include a substrate, a resistor positioned on the substrate, an overcoat layer positioned over the resistor, a fluidics layer having surfaces that form a firing chamber about the resistor, in which the overcoat layer is positioned between the resistor and the firing chamber, and a thin film membrane covering the surfaces of the fluidics layer that form the firing chamber and a portion of the overcoat layer that is in the firing chamber.Type: GrantFiled: October 30, 2015Date of Patent: October 22, 2019Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: James R. Przybyla, Zhizhang Chen
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Publication number: 20190263125Abstract: In some examples, to form a fluid ejection device, a thermal resistor is formed on a substrate, a nitride layer is formed over the thermal resistor, and an oxide layer is formed over the nitride layer using atomic layer deposition (ALD) at a temperature greater than 250° Celsius, where the nitride layer and the oxide layer make up a passivation layer to protect the thermal resistor.Type: ApplicationFiled: January 31, 2016Publication date: August 29, 2019Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Zhizhang Chen, Robert A Pugliese, Mohammed S Shaarawi
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Publication number: 20190217613Abstract: A thin film stack can include a metal substrate having a thickness of from 200 angstroms to 5000 angstroms and a passivation barrier disposed on the metal substrate at a thickness of from 600 angstroms to 1650 angstroms. The passivation barrier can include a dielectric layer and an atomic layer deposition (ALD) layer disposed on the dielectric layer. The dielectric layer can have a thickness of from 550 to 950 angstroms. The ALD layer can have a thickness from 50 to 700 angstroms.Type: ApplicationFiled: September 26, 2016Publication date: July 18, 2019Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Zhizhang Chen, Mohammed S Shaarawi, Jeremy Sells
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Publication number: 20190152226Abstract: According to an example, a printhead including a thin film passivation layer, an adhesion layer, and a fluidics layer; wherein the thin film passivation layer is an atomic layer deposition thin film layer is disclosedType: ApplicationFiled: July 12, 2016Publication date: May 23, 2019Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Zhizhang Chen, Mohammed S Shaarawi
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Patent number: 10232613Abstract: In one example, a liquid ejection device. The device includes a first metal layer over a substrate, a dielectric layer over the first metal layer, and an orifice through the dielectric layer to the first metal layer. The device also includes a second metal layer over the dielectric layer and partially filling the orifice to form a via to electrical connect the two metal layers. The via has a depth-to-width ratio of at least 0.4. The device further includes a passivation stack covering the second metal layer including all interior surfaces of the via. The stack includes an ALD-deposited layer formed by atomic layer deposition.Type: GrantFiled: January 30, 2015Date of Patent: March 19, 2019Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Zhizhang Chen, Mohammed Saad Shaarawi, Roberto A Pugliese, Jr.
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Publication number: 20180372543Abstract: In an example, a lab-on-chip Raman spectroscopy system is described. The lab-on-chip system includes a housing having a fluid channel formed thereon. The fluid channel is coupled to an inlet and to an outlet. A surface-enhanced Raman spectroscopy substrate is positioned inside the fluid channel. The surface-enhanced Raman spectroscopy substrate includes a plasmonic nanostructure and a sacrificial, conformal passivation coating deposited over at least the plasmonic nanostructure.Type: ApplicationFiled: April 19, 2016Publication date: December 27, 2018Applicant: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Chien-Hua Chen, James Elmer Abbott, JR.
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Patent number: 10160206Abstract: Accounting for oscillations with drop ejection waveforms can include identifying a previous ejection waveform having a first plurality of parameters including a time interval from a final pulse of the previous ejection waveform. Accounting for oscillations with drop ejection waveforms can include determining a second plurality of parameters based on the first plurality of parameters, where the second plurality of parameters define a current ejection waveform that accounts for oscillations caused by the previous ejection waveform. Accounting for oscillations with drop ejection waveforms can include applying the current ejection waveform to cause an ejection nozzle of the printhead to generate a desired fluid drop.Type: GrantFiled: January 31, 2013Date of Patent: December 25, 2018Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Zhizhang Chen, Tony S. Cruz-Uribe, Peter J. Fricke