Abstract: An elastic device may comprise an amorphous metal comprising at least one refractory metal, at least two elements selected from periods, 4, 5, 6, 9, and 10, and at least one metalloid. A membrane may comprise a layer of silicon dioxide and a layer of amorphous metal. A MEMS device may comprise a layer of amorphous metal comprising at least one refractory metal, at least two elements selected from periods, 4, 5, 6, 9, and 10, and a metalloid. In one example, the amorphous material comprises Tantalum (Ta), Tungsten (W), and Silicon (Si). In another example, the metalloid is Silicon. In yet another example, the refractory metals comprise Niobium, Molybdenum, Tantalum, Tungsten, Rhenium, or combinations thereof.

Abstract: Energy efficient printheads are disclosed. An example printhead includes a substrate with channels to direct ink toward a plurality of nozzles of the printhead. The example printhead further includes a passivation layer on the substrate. The passivation layer includes a first thin film of a first dielectric material formed using atomic layer deposition.

Abstract: According to an example, a fluid ejection device may include a substrate, a resistor positioned on the substrate, an overcoat layer positioned over the resistor, a fluidics layer having surfaces that form a firing chamber about the resistor, in which the overcoat layer is positioned between the resistor and the firing chamber, and a thin film membrane covering the surfaces of the fluidics layer that form the firing chamber and a portion of the overcoat layer that is in the firing chamber.

Abstract: Examples include a printhead comprising a plurality of nozzles for ejecting printing material drops. Examples include at least one emission device positioned proximate the printhead, where the at least one emission device is to emit energy to thereby expose ejected printing material drops to emitted energy to change at least one material property of ejected printing material drops in-flight.

Abstract: In one example, a printhead structure includes an ejector element, a multi-layer insulator covering the ejector element, and an amorphous metal on the insulator.

Abstract: In one example, a liquid ejection device. The device includes a first metal layer over a substrate, a dielectric layer over the first metal layer, and an orifice through the dielectric layer to the first metal layer. The device also includes a second metal layer over the dielectric layer and partially filling the orifice to form a via to electrical connect the two metal layers. The via has a depth-to-width ratio of at least 0.4. The device further includes a passivation stack covering the second metal layer including all interior surfaces of the via. The stack includes an ALD-deposited layer formed by atomic layer deposition.

Abstract: An elastic device may comprise an amorphous metal comprising at least one refractory metal, at least two elements selected from periods, 4, 5, 6, 9, and 10, and at least one metalloid. A membrane may comprise a layer of silicon dioxide and a layer of amorphous metal. A MEMS device may comprise a layer of amorphous metal comprising at least one refractory metal, at least two elements selected from periods, 4, 5, 6, 9, and 10, and a metalloid. In one example, the amorphous material comprises Tantalum (Ta), Tungsten (W), and Silicon (Si). In another example, the metalloid is Silicon. In yet another example, the refractory metals comprise Niobium, Molybdenum, Tantalum, Tungsten, Rhenium, or combinations thereof.

Abstract: In an example, a printhead includes a die stack having a plurality of dies and a nozzle plate bonded together. A fluid passageway extends throughout the die stack to enable fluid to flow into a bottom die in the die stack, through the die stack, and out through a nozzle in the nozzle plate. The printhead includes a thin film passivation layer that coats all surfaces of the fluid passageway.

Abstract: Accounting for oscillations with drop ejection waveforms can include identifying a previous ejection waveform having a first plurality of parameters including a time interval from a final pulse of the previous ejection waveform. Accounting for oscillations with drop ejection waveforms can include determining a second plurality of parameters based on the first plurality of parameters, where the second plurality of parameters define a current ejection waveform that accounts for oscillations caused by the previous ejection waveform. Accounting for oscillations with drop ejection waveforms can include applying the current ejection waveform to cause an ejection nozzle of the printhead to generate a desired fluid drop.

Abstract: A microelectronic device includes a thin film transistor having an oxide semiconductor channel and an organic polymer passivation layer formed on the oxide semiconductor channel.

Abstract: A method and apparatus are provided for processing a received pulsed-based ultra-wideband (UWB) signal before the signal is demodulated by an energy detection based receiver. A nonlinear signal processing unit contains one or multiple subunits, and each subunit consists of a nonlinear device and a filter. The nonlinear devices can be any devices that can shift signal, noise, and interference spectra in a nonlinear fashion, and include but are not limited to square law devices and Teager-Kaiser operators. By applying the nonlinear signal processing unit on the received UWB signal, a major part of the energy of noise and narrowband interferences is shifted to specific frequency ranges and then removed by the appropriate filter(s) in the nonlinear signal processing unit. Thus, the signal-to-noise-plus-interference ratio (SNIR) of the received UWB signal can be improved.

Abstract: A method and apparatus are provided for implementing an impulse ultra-wideband communications system which combines the technique of transmitted reference (TR) with a code-sifted reference scheme that separates the reference and the data pulses with a sequence of codes such as a subset of Walsh codes. The combination of the two techniques in ultra-wideband (UWB) radio systems removes the wideband delay elements required by conventional TR UWB systems. The invention provides a system with no analog carriers and lower complexities than other UWB systems, and which has better performances, higher tolerance to nonlinearity, and larger capacities.

Abstract: This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.

Abstract: A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.

Abstract: An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity? drift portions of the HV-second-conductivity FET.

Abstract: A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.

Abstract: A method and apparatus are provided for implementing an impulse ultra-wideband communications system which combines the technique of transmitted reference (TR) with a code-sifted reference scheme that separates the reference and the data pulses with a sequence of codes such as a subset of Walsh codes. The combination of the two techniques in ultra-wideband (UWB) radio systems removes the wideband delay elements required by conventional TR UWB systems.

Abstract: Embodiments of a thin film transistor with an atomic layer deposition gate dielectric layer having a high dielectric constant and a zinc indium oxide channel are disclosed.

Abstract: An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity? drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity? drift portions of the HV-second-conductivity FET.

Abstract: A method of wet etching semiconductor zinc tin oxide includes submerging a semiconductor zinc tin oxide film in a bath solution. The film is partially covered with a pattern of protective material, and the bath solution etches semiconductor zinc tin oxide film not covered by the protective material. A system for wet etching semiconductor zinc tin oxide includes a bath containing a bath solution. The bath solution is effective to wet etch the semiconductor zinc tin oxide.