METHOD OF FORMING THE STRUCTURE OF THERMAL RESISTIVE LAYER
The prevent disclosure discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is possible.
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This application is a divisional application of U.S. patent application Ser. No. 12/630,204 filed on Dec. 03, 2009, which claims the foreign priority of Taiwanese patent application 093133566 filed on Nov. 4, 2004, which also is a divisional application of U.S. patent application Ser. No. 11/023,569 filed on Dec. 29, 2004.
TECHNICAL FIELDThe present disclosure relates to a structure of thermal resistive layer and the method of forming the same. More particularly, the disclosure relates to utilize a plurality of oxides of hollow structure to form a thermal resistive layer on a plastic substrate to prevent the substrate from damage caused by the heat generated during manufacturing process.
BACKGROUNDThere are two important aspects while developing the future flat display, one is how to manufacture a flexible, light, and thin display panel, and the other is how to manufacture electronic elements with higher electrons mobility and higher response speed for display panel. But the conventional flat displays are using the glass material as base substrates, which is superior in large area manufacturing and mass production; however, the feature of light, thin and flexible may be difficult to be put into practice for glass substrate, therefore, finding an appropriate material is essential. As to the other aspect, Low Temperature PolySilicon, i.e. LTPS technology, can achieve the objective; therefore, the thin film transistors formed by process of LTPS gradually becomes a solution to be substituted for the process forming amorphous thin film transistors.
Among the materials nominated for the purpose to make a flexible, light, and thin display, plastic substrate is substantially win the engineers' gaze, nevertheless, some plastic substrate may not withstand the damage caused by heat generated during the manufacturing process in LTPS manufacturing process. This is because, during such process, a laser annealing with processing temperature more than 600-Celsius degree, which is almost higher than the glass transition temperature of plastic substrate, is necessary to be utilized to transform the amorphous silicon into poly-crystalline silicon.
Although some plastic substrates may not be capable of bearing such high temperature, overall speaking, compared with other materials, the plastic substrates still have many merits that engineers can't give up; therefore, there are still many efforts that scientists and engineers dedicate to carry on such as U.S. Pat. No. 5,817,550 and U.S. Pat. No. 6,680,485. In the U.S. Pat. No. 5,817,550, it disclosed a method utilizing a low energy laser, which is to form poly-crystalline silicon on a plastic substrate. In such method, at first, a silicon dioxide is formed on a plastic substrate, and then an amorphous layer was deposited on said silicon dioxide layer. Subsequently, a short-pulse XeC1 Excimer Laser (308 nm) is used to transform said amorphous silicon layer into poly-crystalline silicon in no more than 100 ns. Another U.S. Pat. No. 6,680,485 discloses a method utilizing a low energy laser to form poly-crystalline silicon on a low-temperature plastic substrate, wherein a specific thickness around 0.1 to 5.0 micrometer of silicon dioxide is formed, and then a specific thickness around 10 to 500 nanometer is formed on said silicon dioxide layer. Subsequently, a short-pulse XeC1 Excimer Laser (308 nm) is used to transform said amorphous silicon layer into poly-crystalline silicon with processing temperature no more than 250-Celsius degree.
Hence, it is necessary to develop a structure of thermal resistive layer for plastic substrate and manufacturing method.
SUMMARYThe prevent disclosure discloses a method for forming a structure of thermal resistive layer on a plastic substrate comprising the steps of:
forming a material layer on said plastic substrate;
transforming said material layer into a porous template layer with a specific thickness by anodizing ; and
forming a buffer layer on said porous template layer.
The drawings, incorporated into and form a part of the disclosure, illustrate the embodiments and method related to this disclosure and will assist in explaining the detail of the disclosure.
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From the content described above, it is easy to understand the structure of thermal resistive layer according to the present disclosure. In the following description, the manufacturing method to form said structure is disclosed in detail.
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In the following explanation, two examples are illustrated to help understand how to form a poly-crystalline silicon thin film transistor on plastic substrate.
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The disclosed embodiments provide a structure of thermal resistive layer and the method of forming the same, utilizing oxides of hollow structure to form a thermal resistive layer on a plastic substrate, to increase the capability of heatproof, so as to achieve the objective of forming PolySilicon thin film on the plastic substrate.
The disclosed embodiments also provide a structure of thermal resistive layer and the method of forming the same, utilizing oxides of hollow structure formed on a plastic substrate, so as to achieve the objective of making thin film transistor flat display with characteristics of tiny, light, thin and flexible.
The disclosed embodiments further provide a structure of thermal resistive layer and the method of forming the same, making high efficiency electronic elements, so as to lower manufacturing cost.
The disclosed embodiments still further provide a structure of thermal resistive layer and the method of forming the same, a porous layer is formed to smooth the surface of the plastic substrate.
While the present disclosure has been described and illustrated herein with reference to the preferred embodiment thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and the scope of the disclosure.
Claims
1. A method for forming a structure of thermal resistive layer on a plastic substrate comprising the steps of:
- forming a material layer on said plastic substrate;
- transforming said material layer into a porous template layer with a specific thickness by anodizing; and
- forming a buffer layer on said porous template layer.
2. The method according to claim 1, wherein said buffer layer is substantially a silicon oxide.
3. The method according to claim 1, further comprising forming a planarization layer between said buffer layer and said porous template layer.
4. The method according to claim 3, wherein said planarization layer is a material selected from the group consisting of polymer, and inorganic material.
5. The method according to claim 1, wherein said material layer is a material selected from the group consisting of silicon, titanium, zinc, and aluminum.
6. The method according to claim 1, wherein said porous template layer further comprises a plurality of oxides of hollow structure which are material selected from the group consisting of silicon oxide, titanium oxide, zinc oxide, and aluminum oxide.
7. The method according to claim 6, wherein the shape of said oxide of hollow structure is selected from the group consisting of sphere, column, and disk.
8. The method according to claim 1, further comprising a conductive layer formed between said plastic substrate and said material layer.
9. The method according to claim 8, wherein said conductive layer is substantially an indium tin oxide.
Type: Application
Filed: Aug 19, 2011
Publication Date: Dec 8, 2011
Applicant: Industrial Technology Research Institute (Hsinchu)
Inventors: Jung-Fang Chang (Tainan County), Te-Chi Wong (Tainan County), Chien-Te Hsieh (Taichung County), Chin-Jen Huang (Kaohsiung City), Yu-Hung Chen (Taoyuan County)
Application Number: 13/213,892
International Classification: C25D 5/56 (20060101);