High thermal resistance bonding material and semiconductor structures using same

Abstract

A high thermal resistance bonding material for semiconductor chips includes a binder such as epoxy or polyimide and high thermal resistance material dispersed therein such as glass micropheres, glass beads, ceramic microspheres and ceramic beads. The particles of high thermal resistance material are sieved to obtain particles of generally uniform size. In plastic-encapsulated semiconductor chips, each chip is enveloped by the bonding material.

Description

BRIEF DESCRIPTION OF THE DRAWING

FIG. 1 is a side view, partially in section, of a semiconductor chip mounted on a substrate of a hermetically sealed package using bonding material in accordance with one embodiment of the invention.

FIG. 2 is a side view in section of a plastic-encapsulated semiconductor chip using bonding material in accordance with one embodiment of the invention.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

FIG. 1 is a side view, partially in section, of a semiconductor chip 10 mounted on a supporting substrate 12 as in a hermetically sealed package. The chip 10 is separated from the package by air space except at the bottom surface of the chip which is attached to the substrate 12 by means of an adhesive shown generally at 14. As noted above, in power devices it is desirable to facilitate heat transfer from a semiconductor chip to the substrate and the package for heat-dissipation purposes. However, in many integrated circuits it is more important to provide a uniform temperature throughout the semiconductor chip and between semiconductor chips mounted in the same package.

In accordance with the present invention, the adhesive 14 comprises a binder such as an epoxy or polyimide shown at 16 in which high thermal resistance material such as glass microspheres 18 are dispersed. The glass microspheres increase the thermal resistance of the adhesive, and the uniform distribution of the glass microspheres facilitates uniform thermal resistance between the semiconductor chip 10 and the substrate 12.

FIG. 2 is a section view of a plastic-encapsulated chip in accordance with another embodiment of the invention. In this embodiment the chip 20 is embedded in bonding material 22 in accordance with the invention prior to the encapsulation within the plastic package 24. After coating the semiconductor chip 20 with the bonding material 22, the chip 20 is placed on a die paddle 26 of a lead frame prior to curing of the bonding material. Thus, the semiconductor chip is bonded to the die paddle 26 and is totally encapsulated in the bonding material 22 prior to the plastic encapsulation.

In fabricating the bonding material in accordance with one embodiment of the invention, a binder of DuPont 2561 polyimide is employed. Commercially available glass microspheres are sieved to obtain uniformly-sized microspheres. Microspheres having diameters of 3-4 mils, 4-5 mils, and 5-6 mils, have been employed in different embodiments. The uncured polyimide is in fluid form at room temperature, and after the high thermal resistance material is added to the binder the bonding material is applied to a semiconductor chip as described above. Thereafter, in curing the bonding material, the semiconductor device is temperature-cycled. Using DuPont 2561 polyimide, the bonding material and semiconductor device are heated to 90.degree. C. for one hour, 150.degree. C. for one hour, and to 300.degree. C. for one hour to effect the cure.

Other binders such as epoxy and silicone can be employed, and other high thermal resistance material such as glass and ceramic beads and ceramic bubbles can be employed.

Bonding material in accordance with the invention has proved to be successful in improving the uniformity of operating temperature of packaged integrated circuit chips. While the invention has been described with reference to specific embodiments, the description is illustrative of the invention and not to be construed as limiting the invention. Various modifications and applications may occur to those skilled in the art without departing from the true spirit and scope of the invention as defined by the appended claims.

Claims

1. A semiconductor structure combination in which a uniform temperature is provided throughout a semiconductor chip, said combination comprising a supporting substrate for said chip, and a bonding material between and in direct contact with said chip and said substrate, said bonding material including a binder and high thermal resistance material in the form of sieved particles of generally uniform size with diameters of at least two mils, said particles being dispersed throughout said binder and providing uniform spacing and uniform thermal insulation between said chip and said substrate.

2. The combination as defined by claim 1 wherein said bonding material envelopes said chip.

3. The combination as defined by claim 1 wherein said binder is selected from the group consisting of silicone, epoxy and polyimide.

4. The combination as defined by claim 3 wherein said high thermal resistance material is selected from the group consisting of glass microspheres, glass beads, ceramic microspheres, and ceramic beads.

5. The combination as defined by claim 1 wherein said high thermal resistance material is selected from the group consisting of glass microspheres, glass beads, ceramic microspheres, and ceramic beads.