Thermally tolerant electromechanical actuators
A micro-electromechanical systems (MEMS) switch having a thermally tolerant anchor configuration is provided. The MEMS switch includes a substrate onto which first and second conductive pads are formed. A conductive cantilever beam having a first end portion, a middle portion, a second end portion, a top surface, and a bottom surface includes an internal surface that defines an open space through the first end portion. A conductive anchor coupled to the internal surface of the first end portion extends through the open space and is coupled to the first conductive pad such that the bottom surface of the second end portion of the conductive cantilever beam is suspended above the second conductive pad by a predetermined distance. The MEMS switch also includes a conductive actuator plate formed on the substrate at a location beneath the middle portion of the conductive cantilever beam and between the first and second conductive pads.
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This application claims the benefit of provisional patent application Ser. No. 61/154,238, filed Feb. 20, 2009, and provisional patent application Ser. No. 61/156,965, filed Mar. 3, 2009, the disclosures of which are hereby incorporated herein by reference in their entireties. This application also relates to U.S. patent application Ser. No. 12/710,195 entitled “Thermally Neutral Anchor Configuration for an Electromechanical Actuator” and also to U.S. patent application Ser. No. 12/709,979 entitled “Thermally Tolerant Anchor Configuration for a Circular Cantilever,” both of which were concurrently filed on Feb. 22, 2010, the disclosures of which are hereby incorporated herein by reference in their entireties. This application further relates to U.S. patent application Ser. No. 11/955,918 entitled “Integrated MEMS Switch,” filed on Dec. 13, 2007, now U.S. Pat. No. 7,745,892, the disclosure of which is hereby incorporated by reference in its entirety.
FIELD OF THE DISCLOSUREThe present disclosure relates to RF MEMS switches, and in particular the stable volume manufacture of RF MEMS switches.
BACKGROUNDAs electronics evolve, there is an increased need for miniature switches that are provided on semiconductor substrates along with other semiconductor components to form various types of circuits. These miniature switches often act as relays, and are generally referred to as micro-electro-mechanical system (MEMS) switches. MEMS switches generally include a moveable portion such as a cantilever, which has a first end anchored to the semiconductor substrate, and a second free end having a cantilever contact. When the MEMS switch is activated, the cantilever moves the cantilever contact against a substrate contact on the semiconductor substrate and under the cantilever contact.
Turning to
The second end of the cantilever 16 forms or is provided with a cantilever contact 22, which is suspended over a contact portion 24 of a second conductive pad 26. Thus, when the MEMS switch 12 is actuated, the cantilever 16 moves the cantilever contact 22 into electrical contact with the contact portion 24 of the second conductive pad 26 to electrically connect the first conductive pad 20 to the second conductive pad 26.
To actuate the MEMS switch 12, and in particular to cause the second end of the cantilever 16 to move the cantilever contact 22 into contact with the contact portion 24 of the second conductive pad 26, an actuator plate 28 is disposed over a portion of the semiconductor substrate 14 and under the middle portion of the cantilever 16. To actuate the MEMS switch 12, a potential difference is applied between the cantilever 16 and the actuator plate 28. The presence of this potential difference creates an electrostatic field that effectively moves the second end of the cantilever 16 toward the actuator plate 28, thus changing the position of the cantilever 16 from the position illustrated in
Typically, the first conductive pad 20, the second conductive pad 26, and the actuator plate 28 are formed from a single metallic or conductive layer, such as gold, copper, platinum, or the like. The particular form factor for the first conductive pad 20, second conductive pad 26, and actuator plate 28 is provided through an etching or other patterning technique. With continued reference to
With continued reference to
The device layer 40 is the layer or layers in which active semiconductor devices, such as transistors and diodes that employ PN junctions, are formed. The device layer 40 is initially formed as a base semiconductor layer that is subsequently doped with N-type and P-type materials to form the active semiconductor devices. Thus, the active semiconductor devices, except for any necessary contacts or connections traces, are generally contained within the device layer 40. Those skilled in the art will recognize various techniques for forming active semiconductor devices in the device layer 40. A metal-dielectric stack 42 is formed over the device layer 40, wherein a plurality of metal and dielectric layers are alternated to facilitate connection with and between the active devices formed in the device layer 40. Further, in the preferred embodiment the handle wafer 36 is made of a high-resistivity semiconductor material where resistance is greater than 50 ohm-cm.
With the present disclosure, active semiconductor devices may be formed in the device layer 40 and connected to one another via the metal-dielectric stack 42 directly underneath the MEMS switch 12. Since the device layer 40 resides over the insulator layer 38, high voltage devices, which may exceed ten (10) volts in operation, may be formed directly under the MEMS switch 12 and connected in a way to control operation of the MEMS switch 12 or associated circuitry. Although silicon is described in an exemplary embodiment, the semiconductor material for the device layer 40 may include gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP), silicon germanium (SiGe), sapphire, and like semiconductor materials. The device layer 40 typically ranges in thickness from 0.1 microns to 20 or more microns.
As illustrated in
In particular, the cantilever 16 may be released following formation of a small micro-cavity surrounding the MEMS switch 12. A sacrificial material such as polymethylglutarimide (PMGI) is etched away using wet etches. Following drying and cleaning of the MEMS switch 12, a dielectric is used to hermetically seal the micro-cavity. The deposition temperature for the dielectric is typically 250° C.
Later in the manufacturing process, the device can experience multiple exposures to 260° C. solder reflow during attachment of a module incorporating the MEMS switch 12 to an end-user laminate.
A problem of undesirable deformation of the MEMS switch 12 often occurs due to a significant difference in the coefficient of thermal expansion (CTE) between the metal comprising MEMS switch 12 and the semiconductor or insulator comprising passivation layer 44. The CTE of the metal making up the MEMS switch 12 often ranges from two to seven times larger than the CTE of the semiconductor or insulator making up the passivation layer 44. At room temperature (i.e., 25° C.), the difference in the CTE does not present a problem. However, during manufacture, assembly, or operation of the MEMS switch 12, the temperature of the MEMS switch 12 and the substrate 14 (
Notice that a rotational axis 46 of the cantilever 16 is perpendicular to a longitudinal axis 48 of the cantilever 16. As suggested by the finite element simulations, the elevated temperatures experienced by the MEMS switch 12 during manufacturing, assembly, or operation, the cantilever 16 may be thermally deflected to rotate about the rotational axis 46. As the temperature of the MEMS switch 12 increases, the rotation of cantilever 16 may become so pronounced that the cantilever contact 22 will contact the second conductive pad 26. An adhesion between the cantilever contact 22 and the second conductive pad 26 may prevent the cantilever contact 22 and the second conductive pad 26 from breaking contact as the temperature of the MEMS switch 12 decreases. A failure to break contact between the cantilever contact 22 and the second conductive pad 26 will result in a failed MEMS switch along with a failed product incorporating the MEMS switch 12.
Significant yield loss, which may approach 80%, may be attributed to this thermally induced actuation during manufacture of devices with this kind of standard attachment configuration. Thus, the need for a structure which can prevent this kind of thermal actuation is apparent.
SUMMARY OF THE DISCLOSUREEmbodiments of the present disclosure relate to the physical and geometric configuration of an anchor attachment between a movable part of an electromechanical actuator and its underlying substrate. In particular, a first embodiment of the present disclosure is a micro-mechanical systems (MEMS) switch having a thermally tolerant anchor configuration. The disclosed MEMS switch includes a substrate onto which a first conductive pad and a second conductive pad are formed. A conductive cantilever beam having a first end portion, a second end portion, a top surface and a bottom surface includes an internal surface that defines an open space through the first end portion. The open space extends through the top surface and through the bottom surface. A conductive anchor coupled to the internal surface of the first end portion of the conductive cantilever beam extends through the open space and is coupled to the first conductive pad such that the bottom surface of the second end portion of the conductive cantilever beam is suspended above the second conductive pad by a predetermined distance. A conductive actuator plate is formed on the substrate at a location beneath the middle portion of the conductive cantilever beam and between the first and second conductive pads. In a second embodiment, a MEMS switch that includes the above disclosed features further includes a second conductive anchor attached to an external wall of a first end portion of a conductive cantilever beam comprising the second embodiment of the MEMS switch.
In operation, a potential difference applied between the conductive cantilever beam and the actuator plate urges the conductive cantilever beam to deflect towards the substrate such that electrical contacts located on the second end portion of the cantilever beam come into contact with the second conductive pad. When the potential difference applied between the conductive cantilever beam and the actuator is eliminated, the conductive cantilever beam deflects away from the substrate such that the electrical contacts break contact with the second conductive pad.
Those skilled in the art will appreciate the scope of the present disclosure and realize additional aspects thereof after reading the following detailed description in association with the accompanying drawings.
The accompanying drawing figures incorporated in and forming a part of this specification illustrates several aspects of the invention and together with the description serve to explain the principles of the invention.
In a typical attachment configuration for an anchor and a cantilever beam, the axis of the attachment of the cantilever beam to the anchor is at one end of the cantilever beam. In an embodiment of the present disclosure, the attachment axis is forward of an end portion of the cantilever beam. As a result, thermally induced deflections of the cantilever beam are neutralized or made positive such that a tip of the cantilever beam deflects away from a substrate over which the cantilever beam is suspended.
Continuing with
In fact, the deflection of the tip 84 due to thermal expansion alone may be considered positive as illustrated by
Turning now to
With continued reference to
The device layer 100 is the layer or layers in which a plurality of active semiconductor devices 102, such as transistors and diodes that employ PN junctions, are formed. The plurality of active semiconductor devices may be formed using a complementary metal oxide semiconductor (CMOS) fabrication process. The device layer 100 is initially formed as a base semiconductor layer that is subsequently doped with N-type and P-type materials to form the active semiconductor devices. Thus, the active semiconductor devices, except for any necessary contacts or connections traces, are generally contained within the device layer 100. Those skilled in the art will recognize various techniques for forming active semiconductor devices in the device layer 100. A metal-dielectric stack 104 is formed over the device layer 100, wherein a plurality of metal and dielectric layers are alternated to facilitate connection with and between the active devices formed in the device layer 100. Further, in the preferred embodiment the handle wafer 96 is made of a high-resistivity semiconductor material where resistance is greater than 50 ohm-cm.
With the present disclosure, the plurality of active semiconductor devices 102 may be formed in the device layer 100 and connected to one another via the metal-dielectric stack 104 directly underneath the MEMS switch 50. Since the device layer 100 resides over the insulator layer 98, high voltage devices, which may exceed ten (10) volts in operation, may be formed directly under the MEMS switch 50 and connected in a way to control operation of the MEMS switch 50 or associated circuitry. Although silicon is described in the preferred embodiment, the semiconductor material for the device layer 100 may include gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP), silicon germanium (SiGe), sapphire, and like semiconductor materials. The device layer 100 typically ranges in thickness from 0.1 microns to 20 or more microns.
As illustrated in
Continuing with
In fact, the deflection of the tip 142 due to thermal expansion alone may be considered neutral as illustrated by
A MEMS switch having a tip deflection of 0.8 μm due to thermal expansion often leads to a failure of the MEMS switch as well as a failure of a product that may include the MEMS switch. In contrast, a MEMS switch having the tandem anchors configuration of the MEMS switch 108 (
Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.
Claims
1. A micro-electromechanical systems (MEMS) switch having a thermally tolerant anchor configuration comprising:
- a substrate;
- a conductive cantilever beam having a first end portion, a middle portion, a second end portion, a top surface, and a bottom surface, wherein an internal surface defines an open space through the first end portion from the top surface through the bottom surface;
- a conductive anchor coupled to the internal surface of the first end portion of the conductive cantilever beam and extending through the open space and coupled to the substrate such that the bottom surface of the second end portion of the conductive cantilever beam is suspended above the substrate by a predetermined distance; and
- a conductive actuator plate formed on the substrate at a location beneath the middle portion of the conductive cantilever beam; and
- a second conductive anchor attached to an external wall of the first end portion, and extending opposite from the conductive anchor extending through the open space.
2. The MEMS switch of claim 1 wherein a tip of the conductive cantilever beam tends to deflect away from the substrate during thermal expansion of the conductive anchor and the conductive cantilever beam.
3. The MEMS switch of claim 1 wherein the second conductive anchor is coupled to the substrate.
4. The MEMS switch of claim 2 wherein a tip of the conductive cantilever beam tends to deflect less than 0.05 micrometers (μm) when a temperature of the MEMS switch is within a temperature range of −75° C. to 300° C.
5. A semiconductor device comprising:
- a substrate comprising a handle layer, an insulator layer over the handle layer, and a device layer over the handle layer in which a plurality of active semiconductor devices is formed; and
- a micro-electromechanical systems (MEMS) switch integrally formed on the substrate, the MEMS switch comprising: a conductive cantilever beam having a first end portion, a middle portion, a second end portion, a top surface, and a bottom surface, wherein an internal surface defines an open space through the first end portion from the top surface through the bottom surface; a conductive anchor coupled to the internal surface of the first end portion of the conductive cantilever beam and extending through the open space and coupled to the substrate such that the bottom surface of the second end portion of the conductive cantilever beam is suspended above the substrate by a predetermined distance; and a conductive actuator plate formed on the substrate at a location beneath the middle portion of the conductive cantilever beam.
6. The semiconductor device of claim 5 wherein a tip of the conductive cantilever beam tends to deflect away from the substrate during thermal expansion of the conductive anchor and the conductive cantilever beam.
7. The semiconductor device of claim 5 further including a second conductive anchor attached to an external wall of the first end portion, and extending opposite from the conductive anchor extending through the open space.
8. The semiconductor device of claim 7 wherein the second conductive anchor is coupled to the substrate.
9. The semiconductor device of claim 7 wherein a tip of the conductive cantilever beam tends to deflect less than 0.05 micrometers (μm) when a temperature of the MEMS switch is within a temperature range of −75° C. to 300° C.
10. The semiconductor device of claim 5 further comprising an overmold covering the MEMS switch and the substrate, wherein an integrated module comprising the plurality of active semiconductor devices and the MEMS switch is formed.
11. The semiconductor device of claim 8 further comprising:
- a multilayer encapsulation structure forming an enclosure about the conductive anchor extending through the open space, the second conductive anchor, the conductive cantilever beam and the conductive actuator plate; and
- an overmold covering the MEMS switch and the substrate, wherein an integrated module comprising the plurality of active semiconductor devices is formed.
12. The semiconductor device of claim 11 wherein a space encapsulated by the multilayer encapsulation structure is filled with an inert gas.
13. The semiconductor device of claim 5 wherein the device layer comprises silicon and the plurality of active semiconductor devices is formed using a complementary metal oxide semiconductor (CMOS) fabrication process.
14. A method of making a micro-electromechanical systems (MEMS) switch having a thermally tolerant anchor configuration, the method comprising:
- providing a substrate;
- forming a conductive cantilever beam having a first end portion, a middle portion, a second end portion, a top surface, and a bottom surface, wherein an internal surface defines an open space through the first end portion from the top surface through the bottom surface;
- forming a conductive anchor coupled to the internal surface of the first end portion of the conductive cantilever beam and extending through the open space and coupled to the substrate such that the bottom surface of the second end portion of the conductive cantilever beam is suspended above the substrate by a predetermined distance; and
- forming a conductive actuator plate on the substrate at a location beneath the middle portion of the conductive cantilever beam; and
- forming a second conductive anchor attached to an external wall of the first end portion, and extending opposite from the conductive anchor extending through the open space.
15. The method of claim 14 further including forming an overmold covering the MEMS switch and the substrate, wherein an integrated module comprising a plurality of active semiconductor devices and the MEMS switch is formed.
16. The method of claim 15 wherein at least one of the plurality of active semiconductor devices is formed directly underneath the MEMS switch in a device layer of the substrate.
17. The method of claim 14 further forming:
- a multilayer encapsulation structure to provide an enclosure about the conductive anchor, the conductive cantilever beam and the conductive actuator plate; and
- an overmold covering the MEMS switch and the substrate, wherein an integrated module comprising a plurality of active semiconductor devices is formed.
18. The method of claim 17 wherein a space encapsulated by the multilayer encapsulation structure is filled with an inert gas.
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Type: Grant
Filed: Feb 22, 2010
Date of Patent: Nov 20, 2012
Assignee: RF Micro Devices, Inc. (Greensboro, NC)
Inventors: Jonathan Hale Hammond (Oak Ridge, NC), Jan Vandemeer (Mesa, AZ)
Primary Examiner: Mamadou Diallo
Attorney: Winthrow & Terranova, P.L.L.C.
Application Number: 12/710,108
International Classification: H01L 29/84 (20060101);