Abstract: Disclosed is an ultrasonic probe comprising: CMUT cells (13) that mutually convert ultrasonic waves and electrical signals; a semiconductor substrate (15) that has a plurality of the CMUT cells (13) formed on the surface thereof; an acoustic lens (3) that is provided on the front face side of the CMUT cells (13); and a backing layer (5) that is provided on the rear face side of the semiconductor substrate (15). The backing layer (5) is formed by a first backing layer (27) that makes contact with the semiconductor substrate, and a second backing layer (29) that is provided on the rear face side of the backing layer (27). The acoustic impedance of the backing layer (27) is set based on the sheet thickness of the semiconductor substrate (15). The backing layer (29) is formed by attenuating material capable of attenuating ultrasonic waves transmitted through the backing layer (27).

Abstract: Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.

Abstract: A risk of an electrical short between electrode pads of a semiconductor device can be reduced to thereby improve quality of the semiconductor device. During ball bonding in wire bonding, in each of the electrode pads of a semiconductor chip which are arrayed along an ultrasonic wave application direction (ultrasonic vibration direction), a ball at the tip of a copper wire and the electrode pad are coupled to each other while being rubbed against each other in a direction intersecting the ultrasonic wave application direction. Thus, the amount of AL splash formed on the electrode pad can be minimized to make the AL splash smaller. As a result, the quality of the semiconductor device assembled by the above-mentioned ball bonding can be improved.

Abstract: A micro-electromechanical systems (MEMS) switch having a thermally tolerant anchor configuration is provided. The MEMS switch includes a substrate onto which first and second conductive pads are formed. A conductive cantilever beam having a first end portion, a middle portion, a second end portion, a top surface, and a bottom surface includes an internal surface that defines an open space through the first end portion. A conductive anchor coupled to the internal surface of the first end portion extends through the open space and is coupled to the first conductive pad such that the bottom surface of the second end portion of the conductive cantilever beam is suspended above the second conductive pad by a predetermined distance. The MEMS switch also includes a conductive actuator plate formed on the substrate at a location beneath the middle portion of the conductive cantilever beam and between the first and second conductive pads.

Abstract: The present invention provides a MEMS switch that is formed on, not merely placed on, a semiconductor substrate of a semiconductor device. The basic semiconductor substrate includes a handle wafer, an insulator layer over the handle wafer, and a device layer over the insulator layer. The device layer is one in which active semiconductor devices, such as transistors and diodes, may be formed. The MEMS switch is formed over the device layer during fabrication of the semiconductor device. Additional layers, such as connecting layers, passivation layers, and dielectric layers, may be inserted among or between any of these various layers without departing from the essence of the invention. As such, the present invention avoids the need to fabricate MEMS switches apart from the devices that contain circuitry to be associated with the MEMS switches, and to subsequently mount the MEMS switches to modules that circuitry.

Abstract: A thermal mechanical process for bonding a flip chip die to a substrate. The flip chip die includes a plurality of copper pillar bumps, each copper pillar bump of the plurality of copper pillar bumps having a copper portion attached to the die and a bonding cap attached to the copper portion. The process includes positioning the die on the substrate such that the bonding cap of each copper pillar bump of the plurality of copper pillar bumps contacts a corresponding respective one of a plurality of bonding pads on the substrate, and thermosonically bonding the die to the substrate.

Abstract: A method for manufacturing a micromechanical component and a micromechanical component manufactured using this method are described, the micromechanical component having a first substrate, which in turn has at least one cavity and one printed conductor. At least a part of the printed conductor is applied to at least a part of the walls of the cavity. In particular, the floor of the cavity is considered part of the cavity walls.

Abstract: A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal layer disposed on, and in contact with the second metal layer, the second metal layer being stiffer than the third metal layer. An additional metal is included wherein the dielectric layer is disposed between the metal structure and the additional metal.

Abstract: A drive electrode to which a voltage for allowing a vibrator to vibrate is applied and first and second detection electrodes extending in the longitudinal direction of the vibrator in parallel to each other are formed as the upper electrode such that the drive electrode is interposed between the first and second detection electrodes and does not contact with the detection electrodes. In the case where there is a difference between the detection signals detected in the first and second detection electrodes when a voltage is applied between the lower electrode and drive electrode to allow the vibrator to vibrate at a vertical resonance frequency, a laser light is irradiated to a desired portion of the vibrator to apply grinding operation based on detection signals detected in the first and second detection electrodes, thereby adjusting the shape of the vibrator.